Inventor · disambiguated record
Len Mei
Also filed as: MEI LEN
7 granted patents·8 pending applications·160 citations·filing 1998–2010
85Inventor score
Top patents by PatentIndex Score
15 records- 0188US7816726B2Nonvolatile memories with laterally recessed charge-trapping dielectricPROMOS TECHNOLOGIES PTE LTD·Filed 2007·Granted Oct 19, 2010·15 cites·23 claims
- 0287US6495411B1Technique to improve deep trench capacitance by increasing surface thereofPROMOS TECHNOLOGY INC·Filed 2000·Granted Dec 17, 2002·50 cites·20 claims
- 0383US6232171B1Technique of bottle-shaped deep trench formationPROMOS TECHNOLOGY INC·Filed 1999·Granted May 15, 2001·65 cites·8 claims
- 0466US7452776B1Integrated circuits with substrate protrusions, including (but not limited to) floating gate memoriesPROMOS TECHNOLOIES PTE LTD·Filed 2007·Granted Nov 18, 2008·4 cites·10 claims
- 0562US7808032B2Integrated circuits with substrate protrusions, including (but not limited to) floating gate memoriesPROMOS TECHNOLOGIES PTE LTD·Filed 2008·Granted Oct 5, 2010·2 cites·14 claims
- 0661US6007405AMethod and apparatus for endpoint detection for chemical mechanical polishing using electrical lappingPROMOS TECHNOLOGIES INC·Filed 1998·Granted Dec 28, 1999·24 cites·21 claims
- 0745US2009256221A1Method for making very small isolated dots on substratesMEI LEN·Filed 2008·Application pending·0 cites
- 0842US2009085069A1NAND-type Flash Array with Reduced Inter-cell Coupling ResistanceMEI LEN·Filed 2007·Application pending·0 cites
- 0942US2009321806A1Nonvolatile memory with floating gates with upward protrusionsMEI LEN·Filed 2008·Application pending·0 cites
- 1035US2010323511A1Nonvolatile memories with laterally recessed charge-trapping dielectricHE YUE-SONG·Filed 2010·Application pending·0 cites
- 1134US8125020B2Non-volatile memory devices with charge storage regionsHE YUE-SONG·Filed 2007·Granted Feb 28, 2012·0 cites·20 claims
- 1234US2009251972A1Nonvolatile memory arrays with charge trapping dielectric and with non-dielectric nanodotsHE YUE-SONG·Filed 2008·Application pending·0 cites
- 1334US2005205411A1[physical vapor deposition process and apparatus therefor]CHEN TAI-YUAN·Filed 2004·Application pending·0 cites
- 1434US2009101961A1Memory devices with split gate and blocking layerHE YUE-SONG·Filed 2007·Application pending·0 cites
- 1534US2009184359A1Split-gate non-volatile memory devices having nitride tunneling layersHE YUE-SONG·Filed 2008·Application pending·0 cites
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