Inventor · disambiguated record
Yong-Suk Tak
Also filed as: TAK YONG-SUK
34 granted patents·24 pending applications·205 citations·filing 2008–2025
97Inventor score
Top patents by PatentIndex Score
58 records- 0197US9991257B2Semiconductor device having fin active regions and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jun 5, 2018·30 cites·18 claims
- 0296US10096688B2Integrated circuit device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Oct 9, 2018·16 cites·20 claims
- 0394US10008575B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jun 26, 2018·13 cites·20 claims
- 0494US9859393B2Integrated circuit device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jan 2, 2018·11 cites·20 claims
- 0593US9929160B1Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Mar 27, 2018·17 cites·20 claims
- 0693US9142558B2Semiconductor device having supporter and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Sep 22, 2015·20 cites·26 claims
- 0792US10403739B2Method for fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Sep 3, 2019·13 cites·20 claims
- 0892US10153277B2Integrated circuit device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Dec 11, 2018·8 cites·14 claims
- 0992US9553141B2Semiconductor device having supporterSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jan 24, 2017·10 cites·20 claims
- 1089US9559185B2Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jan 31, 2017·6 cites·20 claims
- 1188US8343844B2Method for manufacturing capacitor of semiconductor device and capacitor of semiconductor device manufactured therebySAMSUNG ELECTRONICS CO LTD·Filed 2011·Granted Jan 1, 2013·11 cites·12 claims
- 1285US9837500B2Semiconductor devices including source/drain regions having silicon carbonSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Dec 5, 2017·6 cites·20 claims
- 1385US9577075B2Method of manufacturing semiconductor device using plasma doping process and semiconductor device manufactured by the methodSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Feb 21, 2017·6 cites·20 claims
- 1484US9887080B2Method of forming SiOCN material layer and method of fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Feb 6, 2018·4 cites·19 claims
- 1582US9984925B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted May 29, 2018·4 cites·12 claims
- 1680US10176989B2Method of manufacturing integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jan 8, 2019·3 cites·18 claims
- 1779US10685957B2Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jun 16, 2020·2 cites·12 claims
- 1879US10541127B2Material layers, semiconductor devices including the same, and methods of fabricating material layers and semiconductor devicesTAK YONG SUK·Filed 2016·Granted Jan 21, 2020·4 cites·16 claims
- 1979US10460927B2Methods of fabricating a SiOCN layer using a first and second carbon precursor, the first carbon precursor being different from the second carbon precursorSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Oct 29, 2019·2 cites·18 claims
- 2079US8643075B2Semiconductor device having glue layer and supporterKIM WAN-DON·Filed 2011·Granted Feb 4, 2014·5 cites·17 claims
- 2179US2025374610A1Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 2278US10026736B2Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 17, 2018·2 cites·14 claims
- 2376US2025344454A1Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 2473US9153499B2Semiconductor device having metal plug and method of forming the sameKIM WAN-DON·Filed 2012·Granted Oct 6, 2015·4 cites·18 claims
- 2570US2025280579A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 2669US8357613B2Methods of fabricating semiconductor devices and semiconductor devices including a contact plug processed by rapid thermal annealingSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Jan 22, 2013·6 cites·13 claims
- 2766US9728644B2Semiconductor device including field effect transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Aug 8, 2017·1 cites·19 claims
- 2865US12342588B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jun 24, 2025·0 cites·20 claims
- 2965US2025254863A1Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3065US2025287649A1Integrated circuit semiconductor devices and methods of forming sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3165US2025359019A1Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3264US12439646B2Oxide semiconductor device comprising oxygen vacanciesSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 7, 2025·0 cites·20 claims
- 3363US12453078B2Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Oct 21, 2025·0 cites·20 claims
- 3463US12426312B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Sep 23, 2025·0 cites·13 claims
- 3563US2025107065A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3660US2025227914A1Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3760US2024251545A1Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 3859US2024414925A1Semiconductor device and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3959US2025359020A1Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4058US10529555B2Methods of fabricating a SiOCN layer using a first and second carbon precursor, the first carbon precursor being different from the second carbon precursorSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jan 7, 2020·0 cites·18 claims
- 4158US7781819B2Semiconductor devices having a contact plug and fabrication methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 24, 2010·1 cites·20 claims
- 4256US2024284658A1Semiconductor device and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 4355US12213304B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jan 28, 2025·0 cites·20 claims
- 4452US9825153B2Method of manufacturing semiconductor device using plasma doping process and semiconductor device manufactured by the methodSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Nov 21, 2017·0 cites·13 claims
- 4550US2013217203A1Capacitor, method of forming a capacitor, semiconductor device including a capacitor and method of manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2013·Application pending·0 cites
- 4650US2014145306A1Semiconductor device having glue layer and supporterSAMSUNG ELECTRONICS CO LTD·Filed 2014·Application pending·0 cites
- 4748US10861695B2Method of forming a low-k layer and method of forming a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Dec 8, 2020·0 cites·19 claims
- 4848US2009258470A1Method of Manufacturing a Semiconductor Device Using an Atomic Layer Deposition ProcessSAMSUNG ELECTRONICS CO LTD·Filed 2009·Application pending·0 cites
- 4945US2012119327A1Capacitor and semiconductor device including a capacitorKWON OH-SEONG·Filed 2011·Application pending·0 cites
- 5044US2009130457A1Dielectric structureSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
Showing the top 50 of 58 patent records by PatentIndex Score.
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