Inventor · disambiguated record
Hong-Sik Jeong
Also filed as: JEONG HONG-SIK
23 granted patents·3 pending applications·620 citations·filing 1999–2017
96Inventor score
Files withSAMSUNG ELECTRONICS CO LTD22HWANG YOUNG-NAM1JEONG HONG-SIK1PARK JAE-HYUN1UNIV HANYANG IND UNIV COOP FOUND1
Top patents by PatentIndex Score
26 records- 0198US7916538B2Memory device employing NVRAM and flash memory cellsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Mar 29, 2011·334 cites·15 claims
- 0291US6350649B1Bit line landing pad and borderless contact on bit line stud with etch stop layer and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Feb 26, 2002·48 cites·21 claims
- 0390US7164598B2Methods of operating magnetic random access memory device using spin injection and related devicesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 16, 2007·25 cites·42 claims
- 0487US7295463B2Phase-changeable memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 13, 2007·20 cites·24 claims
- 0585US6787906B1Bit line pad and borderless contact on bit line stud with localized etch stop layer formed in an undermined regionSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Sep 7, 2004·36 cites·11 claims
- 0685US6764941B2Bit line landing pad and borderless contact on bit line stud with localized etch stop layer and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Jul 20, 2004·33 cites·8 claims
- 0775US6518671B1Bit line landing pad and borderless contact on bit line stud with localized etch stop layer and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Feb 11, 2003·18 cites·6 claims
- 0875US6177320B1Method for forming a self aligned contact in a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Jan 23, 2001·50 cites·30 claims
- 0973US6836019B2Semiconductor device having multilayer interconnection structure and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Dec 28, 2004·17 cites·3 claims
- 1069US7843741B2Memory devices with selective pre-write verification and methods of operation thereofSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Nov 30, 2010·6 cites·20 claims
- 1169US6815300B2Method for manufacturing semiconductor device having increased effective channel lengthSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Nov 9, 2004·12 cites·35 claims
- 1265US7569401B2Magnetic random access memory cells having split subdigit lines having cladding layers thereon and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 4, 2009·2 cites·14 claims
- 1361US8320170B2Multi-bit phase change memory devicesHWANG YOUNG-NAM·Filed 2010·Granted Nov 27, 2012·3 cites·16 claims
- 1460US6656790B2Method for manufacturing a semiconductor device including storage nodes of capacitorSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Dec 2, 2003·9 cites·7 claims
- 1552US6812572B2Bit line landing pad and borderless contact on bit line stud with localized etch stop layer formed in void region, and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Nov 2, 2004·4 cites·20 claims
- 1650US10014348B2Artificial neuron semiconductor element having three-dimensional structure and artificial neuron semiconductor system using sameUNIV HANYANG IND UNIV COOP FOUND·Filed 2017·Granted Jul 3, 2018·0 cites·14 claims
- 1750US8043924B2Methods of forming phase-change memory units, and methods of manufacturing phase-change memory devices using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Oct 25, 2011·0 cites·6 claims
- 1849US2010072453A1Phase-Changeable Fuse Elements and Memory Devices Containing Phase-Changeable Fuse Elements and Memory Cells ThereinJEONG HONG-SIK·Filed 2009·Application pending·0 cites
- 1948US7510963B2Semiconductor device having multilayer interconnection structure and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 31, 2009·2 cites·11 claims
- 2047US2005205952A1Magnetic random access memory cells having split sub-digit lines having cladding layers thereon and methods of fabricating the samePARK JAE-HYUN·Filed 2005·Application pending·0 cites
- 2145US7700430B2Phase-changeable memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 20, 2010·1 cites·21 claims
- 2242US7462523B2Semiconductor memory device and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 9, 2008·0 cites·21 claims
- 2338US6720276B2Methods of forming spin on glass layers by curing remaining portions thereofSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Apr 13, 2004·0 cites·14 claims
- 2437US7300888B2Methods of manufacturing integrated circuit devices having an encapsulated insulation layerSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Nov 27, 2007·0 cites·17 claims
- 2537US2009230378A1Resistive memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 2635US6900546B2Semiconductor memory device and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted May 31, 2005·0 cites·9 claims
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