Inventor · disambiguated record
Patricio E. Romero
Also filed as: ROMERO PATRICIO · ROMERO PATRICIO E · ROMERO PATRICIO EDUARDO
23 granted patents·20 pending applications·255 citations·filing 2008–2025
94Inventor score
Top patents by PatentIndex Score
43 records- 0197US9236292B2Selective area deposition of metal films by atomic layer deposition (ALD) and chemical vapor deposition (CVD)ROMERO PATRICIO E·Filed 2013·Granted Jan 12, 2016·125 cites·9 claims
- 0297US9067958B2Scalable and high yield synthesis of transition metal bis-diazabutadienesINTEL CORP·Filed 2013·Granted Jun 30, 2015·79 cites·7 claims
- 0390US9932671B2Precursor and process design for photo-assisted metal atomic layer deposition (ALD) and chemical vapor deposition (CVD)INTEL CORP·Filed 2014·Granted Apr 3, 2018·10 cites·8 claims
- 0490US9583389B2Selective area deposition of metal films by atomic layer deposition (ALD) and chemical vapor deposition (CVD)ROMERO PATRICIO E·Filed 2015·Granted Feb 28, 2017·7 cites·11 claims
- 0589US12365984B2Transition metal deposition processes and deposition assemblyASM IP HOLDING BV·Filed 2023·Granted Jul 22, 2025·1 cites·19 claims
- 0688US9530733B2Forming layers of materials over small regions by selective chemical reaction including limiting enchroachment of the layers over adjacent regionsINTEL CORP·Filed 2013·Granted Dec 27, 2016·8 cites·20 claims
- 0786US11512098B2Scandium precursor for SC2O3 or SC2S3 atomic layer depositionINTEL CORP·Filed 2016·Granted Nov 29, 2022·3 cites·6 claims
- 0884US9090964B2Additives to improve the performance of a precursor source for cobalt depositionINTEL CORP·Filed 2013·Granted Jul 28, 2015·2 cites·26 claims
- 0983US12344627B2Scandium precursor for SC2O3 or SC2S3 atomic layer depositionINTEL CORP·Filed 2023·Granted Jul 1, 2025·0 cites·11 claims
- 1082US9786559B2Process and material for preventing deleterious expansion of high aspect ratio copper filled through silicon vias (TSVs)INTEL CORP·Filed 2016·Granted Oct 10, 2017·3 cites·12 claims
- 1180US10396176B2Selective gate spacers for semiconductor devicesINTEL CORP·Filed 2014·Granted Aug 27, 2019·3 cites·23 claims
- 1280US10243080B2Selective deposition utilizing sacrificial blocking layers for semiconductor devicesINTEL CORP·Filed 2014·Granted Mar 26, 2019·3 cites·20 claims
- 1379US11866453B2Scandium precursor for SC2O3 or SC2S3 atomic layer depositionINTEL CORP·Filed 2022·Granted Jan 9, 2024·0 cites·11 claims
- 1478US9390932B2Electropositive metal containing layers for semiconductor applicationsINTEL CORP·Filed 2015·Granted Jul 12, 2016·2 cites·26 claims
- 1577US10971600B2Selective gate spacers for semiconductor devicesINTEL CORP·Filed 2019·Granted Apr 6, 2021·1 cites·16 claims
- 1673US9455150B2Conformal thin film deposition of electropositive metal alloy filmsINTEL CORP·Filed 2013·Granted Sep 27, 2016·3 cites·13 claims
- 1772US11532724B2Selective gate spacers for semiconductor devicesINTEL CORP·Filed 2021·Granted Dec 20, 2022·0 cites·20 claims
- 1871US8952355B2Electropositive metal containing layers for semiconductor applicationsROMERO PATRICIO E·Filed 2011·Granted Feb 10, 2015·2 cites·20 claims
- 1970US9385033B2Method of forming a metal from a cobalt metal precursorBLACKWELL JAMES M·Filed 2013·Granted Jul 5, 2016·3 cites·10 claims
- 2070US2025197431A1Methods and systems for forming a layer comprising silicon and composition and synthesis of silicon precursorASM IP HOLDING BV·Filed 2024·Application pending·0 cites
- 2169US2025109492A1Method, system and apparatus for forming a metal sulfide layerASM IP HOLDING BV·Filed 2024·Application pending·0 cites
- 2268US2024102163A1Compositions comprising borazine and its derivatives, and related methods and systemsASM IP HOLDING BV·Filed 2023·Application pending·0 cites
- 2366US2025327179A1Systems, methods, and structures for threshold voltage controlASM IP HOLDING BV·Filed 2025·Application pending·0 cites
- 2463US2025087478A1Methods for forming a metal silicate layer for controlling a threshold voltage of a metal-oxide-semiconductor field effect transistorASM IP HOLDING BV·Filed 2024·Application pending·0 cites
- 2563US2025218783A1Method, system and apparatus for forming a threshold voltage shifting layerASM IP HOLDING BV·Filed 2024·Application pending·0 cites
- 2662US2025183030A1Metal and phosphorous containing films and methods and systems for producing said films and applications thereofASM IP HOLDING BV·Filed 2024·Application pending·0 cites
- 2761US2025210343A1Temperature control module for a furnace reactor and method of controlling temperature of a furnace reactorASM IP HOLDING BV·Filed 2024·Application pending·0 cites
- 2861US2025112057A1Chemical etching of molybdenum filmsASM IP HOLDING BV·Filed 2024·Application pending·0 cites
- 2960US10756215B2Selective deposition utilizing sacrificial blocking layers for semiconductor devicesINTEL CORP·Filed 2019·Granted Aug 25, 2020·0 cites·19 claims
- 3059US2024203730A1Method of forming an epitaxial layerASM IP HOLDING BV·Filed 2023·Application pending·0 cites
- 3158US2025079156A1Nitrogen-based oxygen-free dipoles, related devices, related systems, and related methodsASM IP HOLDING BV·Filed 2024·Application pending·0 cites
- 3258US2025215565A1Vanadium containing layers and methods and systems for depositing said layersASM IP HOLDING BV·Filed 2025·Application pending·0 cites
- 3357US2025174457A1Methods for depositing a boron doped silicon germanium layer and associated compositionsASM IP HOLDING BV·Filed 2024·Application pending·0 cites
- 3456US2024096633A1Methods and assemblies for selectively depositing transition metalsASM IP HOLDING BV·Filed 2023·Application pending·0 cites
- 3552US2025297368A1Methods for etching metal oxide layers employing cyclical etching processes, and associated methods for forming metal oxide layersASM IP HOLDING BV·Filed 2025·Application pending·0 cites
- 3651US2017148739A1Selective diffusion barrier between metals of an integrated circuit deviceROBERTS JEANETTE M·Filed 2014·Application pending·0 cites
- 3748US2010305368A1Combined Formose/Transfer Hydrogenation Process for Ethylene Glycol SynthesisGRUBBS ROBERT H·Filed 2008·Application pending·0 cites
- 3847US11270887B2Passivation layer for germanium substrateINTEL CORP·Filed 2017·Granted Mar 8, 2022·0 cites·26 claims
- 3946US10464959B2Inherently selective precursors for deposition of second or third row transition metal thin filmsINTEL CORP·Filed 2015·Granted Nov 5, 2019·0 cites·19 claims
- 4046US2014117559A1Process and material for preventing deleterious expansion of high aspect ratio copper filled through silicon vias (tsvs)ZIMMERMAN PAUL A·Filed 2012·Application pending·0 cites
- 4143US10217646B2Transition metal dry etch by atomic layer removal of oxide layers for device fabricationINTEL CORP·Filed 2015·Granted Feb 26, 2019·0 cites·21 claims
- 4241US2019147667A1Systems and methods for virtual line servicesWHYLINE INC·Filed 2017·Application pending·0 cites
- 4330US2012070981A1Atomic layer deposition of a copper-containing seed layerCLENDENNING SCOTT B·Filed 2010·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →