Inventor · disambiguated record
Grant Kloster
Also filed as: KLOSTER GRANT · KLOSTER GRANT M
59 granted patents·21 pending applications·1,828 citations·filing 2001–2023
99Inventor score
Top patents by PatentIndex Score
80 records- 0198US6946384B2Stacked device underfill and a method of fabricationINTEL CORP·Filed 2003·Granted Sep 20, 2005·235 cites·23 claims
- 0298US6861332B2Air gap interconnect methodINTEL CORP·Filed 2002·Granted Mar 1, 2005·250 cites·12 claims
- 0397US7087538B2Method to fill the gap between coupled wafersINTEL CORP·Filed 2004·Granted Aug 8, 2006·237 cites·63 claims
- 0496US7320928B2Method of forming a stacked device fillerINTEL CORP·Filed 2003·Granted Jan 22, 2008·227 cites·13 claims
- 0596US6605549B2Method for improving nucleation and adhesion of CVD and ALD films deposited onto low-dielectric-constant dielectricsINTEL CORP·Filed 2001·Granted Aug 12, 2003·162 cites·16 claims
- 0694US7018918B2Method of forming a selectively converted inter-layer dielectric using a porogen materialINTEL CORP·Filed 2003·Granted Mar 28, 2006·76 cites·13 claims
- 0792US6737365B1Forming a porous dielectric layerINTEL CORP·Filed 2003·Granted May 18, 2004·61 cites·15 claims
- 0890US9932671B2Precursor and process design for photo-assisted metal atomic layer deposition (ALD) and chemical vapor deposition (CVD)INTEL CORP·Filed 2014·Granted Apr 3, 2018·10 cites·8 claims
- 0990US6943121B2Selectively converted inter-layer dielectricINTEL CORP·Filed 2002·Granted Sep 13, 2005·43 cites·12 claims
- 1090US6867125B2Creating air gap in multi-level metal interconnects using electron beam to remove sacrificial materialINTEL CORP·Filed 2002·Granted Mar 15, 2005·54 cites·16 claims
- 1189US7238604B2Forming thin hard mask over air gap or porous dielectricINTEL CORP·Filed 2003·Granted Jul 3, 2007·42 cites·26 claims
- 1289US6905958B2Protecting metal conductors with sacrificial organic monolayersINTEL CORP·Filed 2003·Granted Jun 14, 2005·52 cites·26 claims
- 1388US9530733B2Forming layers of materials over small regions by selective chemical reaction including limiting enchroachment of the layers over adjacent regionsINTEL CORP·Filed 2013·Granted Dec 27, 2016·8 cites·20 claims
- 1488US7335586B2Sealing porous dielectric material using plasma-induced surface polymerizationINTEL CORP·Filed 2005·Granted Feb 26, 2008·12 cites·33 claims
- 1587US7220668B2Method of patterning a porous dielectric materialINTEL CORP·Filed 2005·Granted May 22, 2007·11 cites·18 claims
- 1685US7456490B2Sealing porous dielectrics with silane coupling reagentsINTEL CORP·Filed 2006·Granted Nov 25, 2008·9 cites·7 claims
- 1781US7365375B2Organic-framework zeolite interlayer dielectricsINTEL CORP·Filed 2005·Granted Apr 29, 2008·10 cites·11 claims
- 1880US10396176B2Selective gate spacers for semiconductor devicesINTEL CORP·Filed 2014·Granted Aug 27, 2019·3 cites·23 claims
- 1980US10243080B2Selective deposition utilizing sacrificial blocking layers for semiconductor devicesINTEL CORP·Filed 2014·Granted Mar 26, 2019·3 cites·20 claims
- 2080US7303989B2Using zeolites to improve the mechanical strength of low-k interlayer dielectricsINTEL CORP·Filed 2004·Granted Dec 4, 2007·22 cites·9 claims
- 2179US7354862B2Thin passivation layer on 3D devicesINTEL CORP·Filed 2005·Granted Apr 8, 2008·9 cites·7 claims
- 2277US10971600B2Selective gate spacers for semiconductor devicesINTEL CORP·Filed 2019·Granted Apr 6, 2021·1 cites·16 claims
- 2376US7294568B2Formation of air gaps in an interconnect structure using a thin permeable hard mask and resulting structuresINTEL CORP·Filed 2004·Granted Nov 13, 2007·22 cites·25 claims
- 2476US7169715B2Forming a dielectric layer using porogensINTEL CORP·Filed 2003·Granted Jan 30, 2007·18 cites·20 claims
- 2575US7145245B2Low-k dielectric film with good mechanical strength that varies in local porosity depending on location on substrate—thereinINTEL CORP·Filed 2005·Granted Dec 5, 2006·4 cites·6 claims
- 2675US7122481B2Sealing porous dielectrics with silane coupling reagentsINTEL CORP·Filed 2003·Granted Oct 17, 2006·15 cites·27 claims
- 2774US7294934B2Low-K dielectric structure and methodINTEL CORP·Filed 2002·Granted Nov 13, 2007·21 cites·13 claims
- 2874US6930391B2Method for alloy-electroplating group IB metals with refractory metals for interconnectionsINTEL CORP·Filed 2002·Granted Aug 16, 2005·15 cites·16 claims
- 2973US7214594B2Method of making semiconductor device using a novel interconnect cladding layerINTEL CORP·Filed 2002·Granted May 8, 2007·19 cites·17 claims
- 3073US6964919B2Low-k dielectric film with good mechanical strengthINTEL CORP·Filed 2002·Granted Nov 15, 2005·13 cites·11 claims
- 3173US6903461B2Semiconductor device having a region of a material which is vaporized upon exposing to ultraviolet radiationINTEL CORP·Filed 2003·Granted Jun 7, 2005·16 cites·9 claims
- 3273US6734094B2Method of forming an air gap within a structure by exposing an ultraviolet sensitive material to ultraviolet radiationINTEL CORP·Filed 2002·Granted May 11, 2004·16 cites·17 claims
- 3372US11532724B2Selective gate spacers for semiconductor devicesINTEL CORP·Filed 2021·Granted Dec 20, 2022·0 cites·20 claims
- 3472US7332406B2Air gap interconnect structure and methodINTEL CORP·Filed 2004·Granted Feb 19, 2008·11 cites·20 claims
- 3572US6682989B1Plating a conductive material on a dielectric materialINTEL CORP·Filed 2002·Granted Jan 27, 2004·12 cites·14 claims
- 3670US7344972B2Photosensitive dielectric layerINTEL CORP·Filed 2004·Granted Mar 18, 2008·16 cites·15 claims
- 3768US7239019B2Selectively converted inter-layer dielectricINTEL CORP·Filed 2005·Granted Jul 3, 2007·2 cites·14 claims
- 3867US6992391B2Dual-damascene interconnects without an etch stop layer by alternating ILDsINTEL CORP·Filed 2001·Granted Jan 31, 2006·12 cites·15 claims
- 3967US2025108459A1Protective debonding stack for selective transferINTEL CORP·Filed 2023·Application pending·0 cites
- 4066US7422020B2Aluminum incorporation in porous dielectric for improved mechanical properties of patterned dielectricINTEL CORP·Filed 2006·Granted Sep 9, 2008·1 cites·10 claims
- 4164US12381161B2Backside wafer treatments to reduce distortions and overlay errors during wafer chuckingINTEL CORP·Filed 2022·Granted Aug 5, 2025·0 cites·25 claims
- 4264US6984873B2Method of forming a stacked device fillerINTEL CORP·Filed 2003·Granted Jan 10, 2006·11 cites·8 claims
- 4362US7030040B2Selectively growing a polymeric material on a semiconductor substrateINTEL CORP·Filed 2002·Granted Apr 18, 2006·6 cites·16 claims
- 4462US6867473B2Plating a conductive material on a dielectric materialINTEL CORP·Filed 2003·Granted Mar 15, 2005·6 cites·11 claims
- 4562US6846755B2Bonding a metal component to a low-k dielectric materialINTEL CORP·Filed 2003·Granted Jan 25, 2005·6 cites·16 claims
- 4662US6734118B2Dielectric material treatmentINTEL CORP·Filed 2002·Granted May 11, 2004·8 cites·15 claims
- 4760US10756215B2Selective deposition utilizing sacrificial blocking layers for semiconductor devicesINTEL CORP·Filed 2019·Granted Aug 25, 2020·0 cites·19 claims
- 4860US7560165B2Sealing porous dielectric materialsINTEL CORP·Filed 2005·Granted Jul 14, 2009·2 cites·4 claims
- 4959US12165987B2Frame reveals with maskless lithography in the manufacture of integrated circuitsINTEL CORP·Filed 2020·Granted Dec 10, 2024·0 cites·19 claims
- 5059US7217595B2Sealed three dimensional metal bonded integrated circuitsINTEL CORP·Filed 2004·Granted May 15, 2007·7 cites·12 claims
Showing the top 50 of 80 patent records by PatentIndex Score.
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