Inventor · disambiguated record
Thomas J. Dunbar
Also filed as: DUNBAR THOMAS · DUNBAR THOMAS J
30 granted patents·1 pending application·249 citations·filing 1997–2018
97Inventor score
Top patents by PatentIndex Score
31 records- 0198US9054671B2Tunable filter structures and design structuresADKISSON JAMES W·Filed 2011·Granted Jun 9, 2015·47 cites·16 claims
- 0296US8957405B2Graphene field effect transistorIBM·Filed 2013·Granted Feb 17, 2015·20 cites·9 claims
- 0395US9252733B2Switchable filters and design structuresIBM·Filed 2014·Granted Feb 2, 2016·9 cites·18 claims
- 0494US8910355B2Method of manufacturing a film bulk acoustic resonator with a loading elementADKISSON JAMES W·Filed 2011·Granted Dec 16, 2014·19 cites·19 claims
- 0593US9935600B2Switchable filters and design structuresIBM·Filed 2015·Granted Apr 3, 2018·7 cites·12 claims
- 0693US9058455B2Backside integration of RF filters for RF front end modules and design structureADKISSON JAMES W·Filed 2012·Granted Jun 16, 2015·12 cites·18 claims
- 0793US8168474B1Self-dicing chips using through silicon viasADKISSON JAMES W·Filed 2011·Granted May 1, 2012·19 cites·18 claims
- 0891US9048809B2Method of manufacturing switchable filtersADKISSON JAMES W·Filed 2012·Granted Jun 2, 2015·11 cites·18 claims
- 0989US10020789B2Switchable filters and design structuresIBM·Filed 2015·Granted Jul 10, 2018·4 cites·12 claims
- 1089US9099982B2Method of manufacturing switching filters and design structuresADKISSON JAMES W·Filed 2012·Granted Aug 4, 2015·10 cites·18 claims
- 1186US9843303B2Switchable filters and design structuresIBM·Filed 2015·Granted Dec 12, 2017·5 cites·12 claims
- 1285US10559743B2Backside integration of RF filters for RF front end modules and design structureGLOBALFOUNDRIES INC·Filed 2017·Granted Feb 11, 2020·3 cites·20 claims
- 1385US9225311B2Method of manufacturing switchable filtersADKISSON JAMES W·Filed 2012·Granted Dec 29, 2015·5 cites·19 claims
- 1483US10277188B2Switchable filters and design structuresIBM·Filed 2018·Granted Apr 30, 2019·2 cites·12 claims
- 1583US8633055B2Graphene field effect transistorADKISSON JAMES W·Filed 2011·Granted Jan 21, 2014·4 cites·22 claims
- 1681US8673683B2Graphene field effect transistorADKISSON JAMES W·Filed 2012·Granted Mar 18, 2014·2 cites·19 claims
- 1778US9786835B2Backside integration of RF filters for RF front end modules and design structureIBM·Filed 2015·Granted Oct 10, 2017·2 cites·20 claims
- 1878US7429535B2Use of a plasma source to form a layer during the formation of a semiconductor deviceMICRON TECHNOLOGY INC·Filed 2007·Granted Sep 30, 2008·4 cites·10 claims
- 1978US5950092AUse of a plasma source to form a layer during the formation of a semiconductor deviceMICRON TECHNOLOGY INC·Filed 1997·Granted Sep 7, 1999·37 cites·18 claims
- 2075US10164597B2Switchable filters and design structuresIBM·Filed 2017·Granted Dec 25, 2018·1 cites·15 claims
- 2167US8723392B2Saw filter having planar barrier layer and method of makingADKISSON JAMES W·Filed 2011·Granted May 13, 2014·2 cites·13 claims
- 2265US9300272B2Tunable filter structures and design structuresIBM·Filed 2015·Granted Mar 29, 2016·1 cites·6 claims
- 2365US8691690B2Contact formation method incorporating preventative etch step reducing interlayer dielectric material flake defectsAMOAH YOBA·Filed 2010·Granted Apr 8, 2014·2 cites·11 claims
- 2461US6117764AUse of a plasma source to form a layer during the formation of a semiconductor deviceMICRON TECHNOLOGY INC·Filed 1997·Granted Sep 12, 2000·17 cites·14 claims
- 2558US10164596B2Switchable filters and design structuresIBM·Filed 2017·Granted Dec 25, 2018·0 cites·3 claims
- 2658US7709343B2Use of a plasma source to form a layer during the formation of a semiconductor deviceMICRON TECHNOLOGY INC·Filed 2008·Granted May 4, 2010·0 cites·21 claims
- 2750US2013161283A1Saw filter having planar barrier layer and method of makingIBM·Filed 2013·Application pending·0 cites
- 2849US10008597B2Semiconductor devices with asymmetric halo implantation and method of manufactureIBM·Filed 2014·Granted Jun 26, 2018·0 cites·12 claims
- 2937US7294578B1Use of a plasma source to form a layer during the formation of a semiconductor deviceMICRON TECHNOLOGY INC·Filed 1999·Granted Nov 13, 2007·4 cites·14 claims
- 3036US8877596B2Semiconductor devices with asymmetric halo implantation and method of manufactureBHAGAT DARSHANA N·Filed 2010·Granted Nov 4, 2014·0 cites·9 claims
- 3130US6716769B1Use of a plasma source to form a layer during the formation of a semiconductor deviceMICRON TECHNOLOGY INC·Filed 1999·Granted Apr 6, 2004·0 cites·3 claims
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