Inventor · disambiguated record
Mao-Song Tseng
Also filed as: TSENG MAO-SONG
20 granted patents·1 pending application·167 citations·filing 1997–2013
94Inventor score
Top patents by PatentIndex Score
21 records- 0181US7205196B2Manufacturing process and structure of integrated circuitMOSEL VITELIC INC·Filed 2005·Granted Apr 17, 2007·10 cites·19 claims
- 0281US7087958B2Termination structure of DMOS deviceMOSEL VITELIC INC·Filed 2004·Granted Aug 8, 2006·37 cites·13 claims
- 0380US6855986B2Termination structure for trench DMOS device and method of making the sameMOSEL VITELIC INC·Filed 2003·Granted Feb 15, 2005·25 cites·15 claims
- 0478US7265024B2DMOS device having a trenched bus structureMOSEL VITELIC INC·Filed 2006·Granted Sep 4, 2007·7 cites·20 claims
- 0571US7402522B2Hard mask structure for deep trenched super-junction deviceMOSEL VITELIC INC·Filed 2006·Granted Jul 22, 2008·4 cites·6 claims
- 0669US6998315B2Termination structure for trench DMOS device and method of making the sameMOSEL VITELIC INC·Filed 2005·Granted Feb 14, 2006·4 cites·11 claims
- 0768US6821913B2Method for forming dual oxide layers at bottom of trenchMOSEL VITELIC INC·Filed 2002·Granted Nov 23, 2004·12 cites·20 claims
- 0867US7084457B2DMOS device having a trenched bus structureMOSEL VITELIC INC·Filed 2004·Granted Aug 1, 2006·12 cites·15 claims
- 0960US6365455B1Flash memory process using polysilicon spacersMOSEL VITELIC INC·Filed 1998·Granted Apr 2, 2002·21 cites·15 claims
- 1058US7271048B2Method for manufacturing trench MOSFETMOSEL VITELIC INC·Filed 2005·Granted Sep 18, 2007·2 cites·24 claims
- 1152US6989306B2Termination structure of DMOS device and method of forming the sameMOSEL VITELIC INC·Filed 2004·Granted Jan 24, 2006·6 cites·18 claims
- 1252US6184092B1Self-aligned contact for trench DMOS transistorsMOSEL VITELIC INC·Filed 1999·Granted Feb 6, 2001·20 cites·9 claims
- 1347US6335260B1Method for improving the dimple phenomena of a polysilicon film deposited on a trenchMOSEL VITELIC INC·Filed 2000·Granted Jan 1, 2002·4 cites·20 claims
- 1446US6660592B2Fabricating a DMOS transistorMOSEL VITELIC INC·Filed 2002·Granted Dec 9, 2003·3 cites·22 claims
- 1540US7615442B2Method for fabricating trench metal-oxide-semiconductor field effect transistorMOSEL VITELIC INC·Filed 2006·Granted Nov 10, 2009·0 cites·20 claims
- 1633US6677223B2Transistor with highly uniform threshold voltageMOSEL VITELIC INC·Filed 2002·Granted Jan 13, 2004·0 cites·20 claims
- 1731US2002006704A1Process for forming gate oxide layerMOSEL VITELIC INC·Filed 2001·Application pending·0 cites
- 1830US6680261B2Method of reducing boron outgassing at trench power IC's oxidation process for sacrificial oxide layerMOSEL VITELIC INC·Filed 2002·Granted Jan 20, 2004·0 cites·26 claims
- 1929US6828196B2Trench filling process for preventing formation of voids in trenchMOSEL VITELEC INC·Filed 2003·Granted Dec 7, 2004·0 cites·22 claims
- 2028US9153675B2Power semiconductor and manufacturing method thereofMOSEL VITALEC INC·Filed 2013·Granted Oct 6, 2015·0 cites·5 claims
- 2123US5930593AMethod for formating device on wafer without peelingMOSEL VITELIC INC·Filed 1997·Granted Jul 27, 1999·0 cites·23 claims
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