Inventor · disambiguated record
Patricia M. Mooney
Also filed as: MOONEY PATRICIA M · MOONEY PATRICIA MAY
18 granted patents·1 pending application·1,094 citations·filing 1999–2009
95Inventor score
Top patents by PatentIndex Score
19 records- 0199US6350993B1High speed composite p-channel Si/SiGe heterostructure for field effect devicesIBM·Filed 1999·Granted Feb 26, 2002·404 cites·41 claims
- 0297US6593625B2Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealingIBM·Filed 2002·Granted Jul 15, 2003·182 cites·46 claims
- 0397US6515335B1Method for fabrication of relaxed SiGe buffer layers on silicon-on-insulators and structures containing the sameIBM·Filed 2002·Granted Feb 4, 2003·214 cites·27 claims
- 0495US6709903B2Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealingIBM·Filed 2003·Granted Mar 23, 2004·86 cites·45 claims
- 0594US6855649B2Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealingIBM·Filed 2002·Granted Feb 15, 2005·90 cites·63 claims
- 0690US7271043B2Method for manufacturing strained silicon directly-on-insulator substrate with hybrid crystalline orientation and different stress levelsIBM·Filed 2005·Granted Sep 18, 2007·17 cites·26 claims
- 0789US6858502B2High speed composite p-channel Si/SiGe heterostructure for field effect devicesIBM·Filed 2001·Granted Feb 22, 2005·39 cites·30 claims
- 0881US6833332B2Method for fabrication of relaxed SiGe buffer layers on silicon-on-insulators and structures containing the sameIBM·Filed 2002·Granted Dec 21, 2004·23 cites·39 claims
- 0977US7396747B2Hetero-integrated strained silicon n- and p-MOSFETsIBM·Filed 2007·Granted Jul 8, 2008·4 cites·3 claims
- 1076US7238589B2In-place bonding of microstructuresIBM·Filed 2004·Granted Jul 3, 2007·16 cites·16 claims
- 1173US7723791B2Strained silicon directly-on-insulator substrate with hybrid crystalline orientation and different stress levelsIBM·Filed 2008·Granted May 25, 2010·4 cites·10 claims
- 1266US7423303B2Strained silicon directly-on-insulator substrate with hybrid crystalline orientation and different stress levelsIBM·Filed 2007·Granted Sep 9, 2008·2 cites·9 claims
- 1364US8409974B2Strained-silicon-on-insulator single-and double-gate MOSFET and method for forming the sameCOHEN GUY MOSHE·Filed 2009·Granted Apr 2, 2013·3 cites·14 claims
- 1461US7709352B2In-place bonding of microstructuresIBM·Filed 2008·Granted May 4, 2010·1 cites·14 claims
- 1556US2008251813A1HETERO-INTEGRATED STRAINED SILICON n- AND p- MOSFETSIBM·Filed 2008·Application pending·0 cites
- 1655US7273800B2Hetero-integrated strained silicon n- and p-MOSFETsIBM·Filed 2004·Granted Sep 25, 2007·3 cites·28 claims
- 1752US7456081B2In-place bonding of microstructuresIBM·Filed 2007·Granted Nov 25, 2008·0 cites·1 claims
- 1851US7812340B2Strained-silicon-on-insulator single-and double-gate MOSFET and method for forming the sameIBM·Filed 2003·Granted Oct 12, 2010·3 cites·7 claims
- 1951US7084431B2High speed composite p-channel Si/SiGe heterostructure for field effect devicesIBM·Filed 2004·Granted Aug 1, 2006·3 cites·15 claims
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