Inventor · disambiguated record
William G. America
Also filed as: AMERICA WILLIAM · AMERICA WILLIAM G · AMERICA WILLIAM GEORGE
22 granted patents·8 pending applications·847 citations·filing 1983–2008
96Inventor score
Top patents by PatentIndex Score
30 records- 0198US5270125ABoron nutride membrane in wafer structureREDWOOD MICROSYSTEMS INC·Filed 1991·Granted Dec 14, 1993·252 cites·10 claims
- 0295US6491843B1Slurry for chemical mechanical polishing silicon dioxideEASTMAN KODAK CO·Filed 2000·Granted Dec 10, 2002·92 cites·10 claims
- 0394US6544892B2Slurry for chemical mechanical polishing silicon dioxideEASTMAN KODAK CO·Filed 2002·Granted Apr 8, 2003·88 cites·13 claims
- 0491US4876005AHigh pressure column assembly for a liquid chromatograph systemPERKIN ELMER CORP·Filed 1988·Granted Oct 24, 1989·85 cites·9 claims
- 0584US6627107B2Slurry for chemical mechanical polishing silicon dioxideEASTMAN KODAK CO·Filed 2002·Granted Sep 30, 2003·23 cites·7 claims
- 0683US7091164B2Slurry for chemical mechanical polishing silicon dioxideUNIV CLARKSON·Filed 2003·Granted Aug 15, 2006·22 cites·6 claims
- 0783US5066533ABoron nitride membrane in wafer structure and process of forming the samePERKIN ELMER CORP·Filed 1990·Granted Nov 19, 1991·48 cites·6 claims
- 0881US4587014ALiquid chromatography column assemblyPERKIN ELMER CORP·Filed 1984·Granted May 6, 1986·37 cites·1 claims
- 0979US6468910B1Slurry for chemical mechanical polishing silicon dioxideFiled 1999·Granted Oct 22, 2002·44 cites·1 claims
- 1077US7368393B2Chemical oxide removal of plasma damaged SiCOH low k dielectricsIBM·Filed 2006·Granted May 6, 2008·5 cites·27 claims
- 1177US7129159B2Integrated dual damascene RIE process with organic patterning layerIBM·Filed 2004·Granted Oct 31, 2006·23 cites·20 claims
- 1267US4969938AFluid connector for microdevicesPERKIN ELMER CORP·Filed 1990·Granted Nov 13, 1990·31 cites·7 claims
- 1365US6875688B1Method for reactive ion etch processing of a dual damascene structureIBM·Filed 2004·Granted Apr 5, 2005·12 cites·16 claims
- 1460US5270221AMethod of fabricating high quantum efficiency solid state sensorsHUGHES AIRCRAFT CO·Filed 1992·Granted Dec 14, 1993·36 cites·23 claims
- 1558US4476731AInjection valve for liquid chromatographic column and system thereforSCIENT SYSTEMS INC·Filed 1983·Granted Oct 16, 1984·19 cites·9 claims
- 1655US8106485B2Chemical oxide removal of plasma damaged SiCOH low k dielectricsAMERICA WILLIAM G·Filed 2008·Granted Jan 31, 2012·1 cites·16 claims
- 1755US6489642B1Image sensor having improved spectral response uniformityEASTMAN KODAK CO·Filed 2000·Granted Dec 3, 2002·8 cites·8 claims
- 1853US2008210269A1Removing unwanted film from wafer edge region with reactive gas jetIBM·Filed 2008·Application pending·0 cites
- 1953US2008210270A1Removing unwanted film from wafer edge region with reactive gas jetIBM·Filed 2008·Application pending·0 cites
- 2049US7404874B2Method and apparatus for treating wafer edge region with toroidal plasmaIBM·Filed 2004·Granted Jul 29, 2008·3 cites·12 claims
- 2141US2005284568A1Removing unwanted film from wafer edge region with reactive gas jetIBM·Filed 2004·Application pending·0 cites
- 2241US2007166648A1Integrated lithography and etch for dual damascene structuresIBM·Filed 2006·Application pending·0 cites
- 2340US2005263901A1Semiconductor device formed by in-situ modification of dielectric layer and related methodsIBM·Filed 2004·Application pending·0 cites
- 2439US6300160B1Process for charge coupled image sensor with U-shaped gatesEASTMAN KODAK CO·Filed 1999·Granted Oct 9, 2001·7 cites·9 claims
- 2539US2005067702A1Plasma surface modification and passivation of organo-silicate glass films for improved hardmask adhesion and optimal RIE processingIBM·Filed 2003·Application pending·0 cites
- 2639US2005208742A1Oxidized tantalum nitride as an improved hardmask in dual-damascene processingIBM·Filed 2004·Application pending·0 cites
- 2736US6403993B1Charge coupled image sensor with u-shaped gatesEASTMAN KODAK CO·Filed 1999·Granted Jun 11, 2002·5 cites·10 claims
- 2836US2004175934A1Method for improving etch selectivity effects in dual damascene processingIBM·Filed 2003·Application pending·0 cites
- 2935US5362978AMethod for establishing an electrical field at a surface of a semiconductor deviceHUGHES AIRCRAFT CO·Filed 1992·Granted Nov 8, 1994·4 cites·6 claims
- 3032US5585283AMethod for establishing an electrical field by thinning an implanted region at a surface of a semiconductor deviceHUGHES AIRCRAFT CO·Filed 1995·Granted Dec 17, 1996·2 cites·9 claims
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