Inventor · disambiguated record
Zhi-Cheng Lee
Also filed as: LEE ZHI-CHENG
33 granted patents·12 pending applications·66 citations·filing 2009–2025
95Inventor score
Top patents by PatentIndex Score
45 records- 0197US11239327B2HEMT and method of adjusting electron density of 2DEGUNITED MICROELECTRONICS CORP·Filed 2019·Granted Feb 1, 2022·18 cites·19 claims
- 0295US11749748B2High electron mobility transistor and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2021·Granted Sep 5, 2023·2 cites·10 claims
- 0394US11088271B2High electron mobility transistor and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2019·Granted Aug 10, 2021·6 cites·10 claims
- 0490US11380777B2Method for forming a high-voltage metal-oxide-semiconductor transistor deviceUNITED MICROELECTRONICS CORP·Filed 2020·Granted Jul 5, 2022·2 cites·8 claims
- 0589US12396195B2High electron mobility transistor device and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2022·Granted Aug 19, 2025·1 cites·7 claims
- 0686US10566244B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted Feb 18, 2020·3 cites·8 claims
- 0785US12107157B2High electron mobility transistor and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2023·Granted Oct 1, 2024·0 cites·5 claims
- 0884US10629728B1Semiconductor device and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2019·Granted Apr 21, 2020·3 cites·32 claims
- 0984US9384962B2Oxygen treatment of replacement work-function metals in CMOS transistor gatesHWANG GUANG-YAW·Filed 2011·Granted Jul 5, 2016·7 cites·22 claims
- 1084US2024421219A1High electron mobility transistor and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 1183US10103265B1Complementary metal oxide semiconductor device and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Oct 16, 2018·5 cites·20 claims
- 1283US8003461B1Method of fabricating efuse structure, resistor sturcture and transistor sturctureUNITED MICROELECTRONICS CORP·Filed 2010·Granted Aug 23, 2011·7 cites·17 claims
- 1379US12132095B2Method of fabricating metal gate transistorUNITED MICROELECTRONICS CORP·Filed 2023·Granted Oct 29, 2024·0 cites·6 claims
- 1478US9640661B1FinFET having a fin and a V-shaped epitaxial layer formed on the top surface of the fin and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2016·Granted May 2, 2017·2 cites·12 claims
- 1578US2025344431A1Manufacturing method of high electron mobility transistor deviceUNITED MICROELECTRONICS CORP·Filed 2025·Application pending·0 cites
- 1677US8802524B2Method of manufacturing semiconductor device having metal gatesLIAO PO-JUI·Filed 2011·Granted Aug 12, 2014·5 cites·20 claims
- 1777US2024413199A1Method for forming air gap between gate dielectric layer and spacerUNITED MICROELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 1877US2024413200A1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 1973US11652154B2Method of fabricating metal gate transistorUNITED MICROELECTRONICS CORP·Filed 2021·Granted May 16, 2023·0 cites·6 claims
- 2072US2025248059A1Manufacturing method of semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2025·Application pending·0 cites
- 2170US12107121B2Method for forming air gap between gate dielectric layer and spacerUNITED MICROELECTRONICS CORP·Filed 2021·Granted Oct 1, 2024·0 cites·5 claims
- 2270US8268712B2Method of forming metal gate structure and method of forming metal gate transistorHSU CHE-HUA·Filed 2010·Granted Sep 18, 2012·2 cites·20 claims
- 2368US11610973B2High voltage transistor structure and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2021·Granted Mar 21, 2023·0 cites·10 claims
- 2468US10014406B2Semiconductor device and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2016·Granted Jul 3, 2018·1 cites·16 claims
- 2567US2025194130A1High electron mobility transistor and fabricating method of the sameUNITED MICROELECTRONICS CORP·Filed 2025·Application pending·0 cites
- 2666US11251279B2High voltage transistor structure and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2020·Granted Feb 15, 2022·0 cites·9 claims
- 2766US11127838B2Method of fabricating metal gate transistorUNITED MICROELECTRONICS CORP·Filed 2019·Granted Sep 21, 2021·0 cites·6 claims
- 2866US2024047554A1Semiconductor device and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2022·Application pending·0 cites
- 2965US11715784B2Method for forming a high-voltage metal-oxide-semiconductor transistor deviceUNITED MICROELECTRONICS CORP·Filed 2022·Granted Aug 1, 2023·0 cites·10 claims
- 3065US2024021702A1High electron mobility transistor and fabricating method of the sameUNITED MICROELECTRONICS CORP·Filed 2022·Application pending·0 cites
- 3164US11527652B2Semiconductor processUNITED MICROELECTRONICS CORP·Filed 2020·Granted Dec 13, 2022·0 cites·5 claims
- 3263US11011430B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2019·Granted May 18, 2021·0 cites·9 claims
- 3362US8232152B2Removing method of a hard maskHSU CHE-HUA·Filed 2010·Granted Jul 31, 2012·2 cites·8 claims
- 3460US10756209B2Semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2020·Granted Aug 25, 2020·0 cites·10 claims
- 3559US10861974B2Semiconductor structure and process thereofUNITED MICROELECTRONICS CORP·Filed 2019·Granted Dec 8, 2020·0 cites·16 claims
- 3653US10629734B2Fabricating method of fin structure with tensile stress and complementary FinFET structureUNITED MICROELECTRONICS CORP·Filed 2019·Granted Apr 21, 2020·0 cites·5 claims
- 3752US8252515B2Method for removing photoresistCHIEN CHIN-CHENG·Filed 2009·Granted Aug 28, 2012·0 cites·13 claims
- 3850US8492259B2Method of forming metal gate structureHSU CHE-HUA·Filed 2012·Granted Jul 23, 2013·0 cites·18 claims
- 3950US2014339652A1Semiconductor device with oxygen-containing metal gatesUNITED MICROELECTRONICS CORP·Filed 2014·Application pending·0 cites
- 4046US10229995B2Fabricating method of fin structure with tensile stress and complementary FinFET structureUNITED MICROELECTRONICS CORP·Filed 2017·Granted Mar 12, 2019·0 cites·5 claims
- 4141US9490342B2Method for fabricating semiconductor deviceLAI CHIEN-MING·Filed 2011·Granted Nov 8, 2016·0 cites·13 claims
- 4238US8486842B2Method of selectively removing patterned hard maskHSU CHE-HUA·Filed 2010·Granted Jul 16, 2013·0 cites·16 claims
- 4337US2012142157A1Method of fabricating a semiconductor structureCHEN CHENG-GUO·Filed 2010·Application pending·0 cites
- 4436US2012319179A1Metal gate and fabrication method thereofHUANG HSIN-FU·Filed 2011·Application pending·0 cites
- 4534US2018166574A1Finfet with epitaxial layer having octagonal cross-sectionUNITED MICROELECTRONICS CORP·Filed 2016·Application pending·0 cites
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