Inventor · disambiguated record
Toshiyuki Miyanagi
Also filed as: MIYANAGI TOSHIYUKI
13 granted patents·1 pending application·59 citations·filing 2004–2015
90Inventor score
Files withKANSAI ELECTRIC POWER CO4CENTRAL RES INST ELECT3FUJI ELECTRIC CO LTD3ISHII RYOSUKE1KANSAI ELECTRIC CO INC1
Top patents by PatentIndex Score
14 records- 0186US7902054B2Schottky barrier semiconductor device and method for manufacturing the sameCENTRAL RES INST ELECT·Filed 2007·Granted Mar 8, 2011·13 cites·2 claims
- 0285US7507650B2Process for producing Schottky junction type semiconductor deviceCENTRAL RES INST ELECT·Filed 2005·Granted Mar 24, 2009·12 cites·7 claims
- 0380US8154026B2Silicon carbide bipolar semiconductor deviceISHII RYOSUKE·Filed 2006·Granted Apr 10, 2012·8 cites·20 claims
- 0478US9165871B2Semiconductor unit and semiconductor device using the sameFUJI ELECTRIC CO LTD·Filed 2013·Granted Oct 20, 2015·5 cites·5 claims
- 0574US7960737B2Silicon carbide semiconductor device and manufacturing method thereforKANSAI ELECTRIC POWER CO·Filed 2010·Granted Jun 14, 2011·2 cites·1 claims
- 0668US7960257B2Silicon carbide semiconductor device and manufacturing method thereforKANSAI ELECTRIC POWER CO·Filed 2010·Granted Jun 14, 2011·1 cites·3 claims
- 0768US7960738B2Silicon carbide semiconductor device and manufacturing method thereforKANSAI ELECTRIC POWER CO·Filed 2010·Granted Jun 14, 2011·1 cites·1 claims
- 0866US7768017B2Silicon carbide semiconductor device and manufacturing method thereforKANSAI ELECTRIC CO INC·Filed 2004·Granted Aug 3, 2010·9 cites·5 claims
- 0965US8178940B2Schottky barrier diode and method for using the sameNAKAMURA TOMONORI·Filed 2006·Granted May 15, 2012·3 cites·3 claims
- 1061US9355930B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2015·Granted May 31, 2016·1 cites·14 claims
- 1161US8367510B2Process for producing silicon carbide semiconductor deviceCENTRAL RES INST ELECT·Filed 2006·Granted Feb 5, 2013·1 cites·10 claims
- 1259US9601404B2Thermal resistance measuring method and thermal resistance measuring deviceFUJI ELECTRIC CO LTD·Filed 2014·Granted Mar 21, 2017·1 cites·11 claims
- 1356US8455269B2Method for recovering an on-state forward voltage and, shrinking stacking faults in bipolar semiconductor devices, and the bipolar semiconductor devicesMIYANAGI TOSHIYUKI·Filed 2006·Granted Jun 4, 2013·2 cites·10 claims
- 1441US2007290211A1Bipolar Semiconductor Device and Process for Producing the SameKANSAI ELECTRIC POWER CO·Filed 2005·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →