Inventor · disambiguated record
Masayoshi Takemi
Also filed as: TAKEMI MASAYOSHI
21 granted patents·9 pending applications·832 citations·filing 1993–2010
95Inventor score
Files withMITSUBISHI ELECTRIC CORP30
Top patents by PatentIndex Score
30 records- 0197US5782979ASubstrate holder for MOCVDMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Jul 21, 1998·584 cites·2 claims
- 0280US7763486B2Method for manufacturing nitride semiconductor stacked structure and semiconductor light-emitting deviceMITSUBISHI ELECTRIC CORP·Filed 2007·Granted Jul 27, 2010·7 cites·10 claims
- 0377US5539763ASemiconductor lasers and methods for fabricating semiconductor lasersMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Jul 23, 1996·40 cites·36 claims
- 0474US7436870B2Semiconductor laser device and method for manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2005·Granted Oct 14, 2008·4 cites·10 claims
- 0573US7590158B2Semiconductor laser having an improved window layer and method for the sameMITSUBISHI ELECTRIC CORP·Filed 2006·Granted Sep 15, 2009·4 cites·1 claims
- 0673US5872022AMethod for etching a semiconductor method for fabricating semiconductor device method for fabricating semiconductor laser and semiconductor laserMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Feb 16, 1999·41 cites·22 claims
- 0771US7825012B2Method for manufacturing nitride semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2009·Granted Nov 2, 2010·3 cites·12 claims
- 0869US5530732AMethod and apparatus for evaluating thin-film multilayer structureMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Jun 25, 1996·37 cites·4 claims
- 0968US5800622AVapor-phase growth apparatus and compound semiconductor device fabricated therebyMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Sep 1, 1998·46 cites·2 claims
- 1067US7923742B2Method for production of a nitride semiconductor laminated structure and an optical semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2009·Granted Apr 12, 2011·2 cites·24 claims
- 1164US7298769B2Semiconductor laserMITSUBISHI ELECTRIC CORP·Filed 2006·Granted Nov 20, 2007·2 cites·11 claims
- 1262US5728215AMethod for forming a film by selective area MOCVD growthMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Mar 17, 1998·23 cites·27 claims
- 1353US7564076B2Semiconductor device and manufacturing method thereforMITSUBISHI ELECTRIC CORP·Filed 2008·Granted Jul 21, 2009·0 cites·6 claims
- 1453US5383216ASemiconductor laser with light modulatorMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Jan 17, 1995·14 cites·8 claims
- 1552US7632695B2Semiconductor device manufacturing methodMITSUBISHI ELECTRIC CORP·Filed 2007·Granted Dec 15, 2009·0 cites·6 claims
- 1651US7394114B2Semiconductor device and manufacturing method thereforMITSUBISHI ELECTRIC CORP·Filed 2006·Granted Jul 1, 2008·0 cites·8 claims
- 1750US2010289056A1Semiconductor light-emitting devicesMITSUBISHI ELECTRIC CORP·Filed 2010·Application pending·0 cites
- 1850US2008073660A1Semiconductor light-emitting devicesMITSUBISHI ELECTRIC CORP·Filed 2007·Application pending·0 cites
- 1949US2008054277A1Semiconductor laser deviceMITSUBISHI ELECTRIC CORP·Filed 2007·Application pending·0 cites
- 2047US2006086948A1Semiconductor device and semiconductor device manufacturing methodMITSUBISHI ELECTRIC CORP·Filed 2005·Application pending·0 cites
- 2146US5748659ASemiconductor laser deviceMITSUBISHI ELECTRIC CORP·Filed 1995·Granted May 5, 1998·12 cites·8 claims
- 2243US2008130697A1Semiconductor laserMITSUBISHI ELECTRIC CORP·Filed 2007·Application pending·0 cites
- 2342US7172429B2Method of manufacturing semiconductor light emitting deviceMITSUBISHI ELECTRIC CORP·Filed 2006·Granted Feb 6, 2007·0 cites·8 claims
- 2442US7061963B2Semiconductor laser deviceMITSUBISHI ELECTRIC CORP·Filed 2003·Granted Jun 13, 2006·2 cites·4 claims
- 2541US2006091421A1Semiconductor laser deviceMITSUBISHI ELECTRIC CORP·Filed 2005·Application pending·0 cites
- 2641US2004119081A1Semiconductor Laser deviceMITSUBISHI ELECTRIC CORP·Filed 2003·Application pending·0 cites
- 2737US2011177678A1Method for manufacturing nitride semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2010·Application pending·0 cites
- 2836US5805629ASemiconductor laserMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Sep 8, 1998·7 cites·7 claims
- 2934US5394417ASemiconductor laser producing visible lightMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Feb 28, 1995·4 cites·12 claims
- 3032US2010316080A1Semiconductor optical elementMITSUBISHI ELECTRIC CORP·Filed 2010·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →