Inventor · disambiguated record
Pon Sung Ku
Also filed as: KU PON S · KU PON SUNG
11 granted patents·1 pending application·56 citations·filing 2006–2017
88Inventor score
Top patents by PatentIndex Score
12 records- 0194US9324800B1Bidirectional MOSFET with suppressed bipolar snapback and method of manufactureFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Apr 26, 2016·13 cites·20 claims
- 0288US9397213B2Trench gate FET with self-aligned source contactFREESCALE SEMICONDUCTOR INC·Filed 2014·Granted Jul 19, 2016·9 cites·16 claims
- 0387US9680003B2Trench MOSFET shield poly contactFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Jun 13, 2017·5 cites·14 claims
- 0485US9553184B2Edge termination for trench gate FETFREESCALE SEMICONDUCTOR INC·Filed 2014·Granted Jan 24, 2017·8 cites·19 claims
- 0581US9178027B1Bidirectional trench FET with gate-based resurfZITOUNI MOANISS·Filed 2014·Granted Nov 3, 2015·5 cites·20 claims
- 0678US9362394B2Power device termination structures and methodsZITOUNI MOANISS·Filed 2014·Granted Jun 7, 2016·4 cites·20 claims
- 0776US9293535B2Power MOSFET current sense structure and methodWANG PEILIN·Filed 2012·Granted Mar 22, 2016·5 cites·13 claims
- 0875US8143126B2Method for forming a vertical MOS transistorCHEN JINGJING·Filed 2010·Granted Mar 27, 2012·6 cites·18 claims
- 0971US10074743B2Trench MOSFET shield poly contactNXP USA INC·Filed 2017·Granted Sep 11, 2018·1 cites·5 claims
- 1049US9419128B2Bidirectional trench FET with gate-based resurfZITOUNI MOANISS·Filed 2015·Granted Aug 16, 2016·0 cites·20 claims
- 1140US2008112214A1Electronic assembly having magnetic tunnel junction voltage sensors and method for forming the sameCHUNG YOUNG SIR·Filed 2006·Application pending·0 cites
- 1232US8895394B2Trench FET with source recess etchQIN GANMING·Filed 2012·Granted Nov 25, 2014·0 cites·16 claims
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