Inventor · disambiguated record
Koji Sadamatsu
Also filed as: SADAMATSU KOJI
16 granted patents·23 citations·filing 2011–2021
88Inventor score
Top patents by PatentIndex Score
16 records- 0182US11646369B2Silicon carbide semiconductor device having a conductive layer formed above a bottom surface of a well region so as not to be in ohmic connection with the well region and power converter including the sameMITSUBISHI ELECTRIC CORP·Filed 2021·Granted May 9, 2023·1 cites·20 claims
- 0278US10128370B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2015·Granted Nov 13, 2018·3 cites·12 claims
- 0376US8598622B2Semiconductor deviceSADAMATSU KOJI·Filed 2011·Granted Dec 3, 2013·6 cites·3 claims
- 0475US9257541B2High-breakdown-voltage power semiconductor device having a diodeMITSUBISHI ELECTRIC CORP·Filed 2013·Granted Feb 9, 2016·4 cites·9 claims
- 0574US11355627B2Silicon carbide semiconductor device and power converterMITSUBISHI ELECTRIC CORP·Filed 2018·Granted Jun 7, 2022·2 cites·32 claims
- 0674US11189720B2Silicon carbide semiconductor device and power converterMITSUBISHI ELECTRIC CORP·Filed 2018·Granted Nov 30, 2021·2 cites·16 claims
- 0769US9455355B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2013·Granted Sep 27, 2016·3 cites·4 claims
- 0868US11682723B2Silicon carbide semiconductor device and power converterMITSUBISHI ELECTRIC CORP·Filed 2021·Granted Jun 20, 2023·0 cites·14 claims
- 0968US9401314B2Method of testing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2014·Granted Jul 26, 2016·2 cites·14 claims
- 1053US12131906B2Method for fabricating silicon carbide semiconductor device and power conversion device using the silicon carbide semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2020·Granted Oct 29, 2024·0 cites·20 claims
- 1150US10991822B2Silicon carbide semiconductor device having a conductive layer formed above a bottom surface of a well region so as not to be in ohmic connection with the well region and power converter including the sameMITSUBISHI ELECTRIC CORP·Filed 2018·Granted Apr 27, 2021·0 cites·20 claims
- 1246US11508840B2Silicon carbide semiconductor device and power converterMITSUBISHI ELECTRIC CORP·Filed 2020·Granted Nov 22, 2022·0 cites·21 claims
- 1341US12057496B2Silicon carbide semiconductor device and power converterMITSUBISHI ELECTRIC CORP·Filed 2019·Granted Aug 6, 2024·0 cites·12 claims
- 1439US11049963B2Silicon carbide semiconductor device and power converterMITSUBISHI ELECTRIC CORP·Filed 2018·Granted Jun 29, 2021·0 cites·16 claims
- 1536US11222973B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2016·Granted Jan 11, 2022·0 cites·12 claims
- 1635US10475920B2Semiconductor device and semiconductor device manufacturing methodMITSUBISHI ELECTRIC CORP·Filed 2015·Granted Nov 12, 2019·0 cites·14 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →