Inventor · disambiguated record
Steven J. Koester
Also filed as: KOESTER JR STEVEN · KOESTER STEVEN · KOESTER STEVEN J · KOESTER STEVEN JOHN
97 granted patents·15 pending applications·1,998 citations·filing 1999–2024
99Inventor score
Top patents by PatentIndex Score
112 records- 0199US8158515B2Method of making 3D integrated circuitsFAROOQ MUKTA G·Filed 2010·Granted Apr 17, 2012·281 cites·14 claims
- 0299US8129256B23D integrated circuit device fabrication with precisely controllable substrate removalFAROOQ MUKTA G·Filed 2008·Granted Mar 6, 2012·254 cites·18 claims
- 0399US6350993B1High speed composite p-channel Si/SiGe heterostructure for field effect devicesIBM·Filed 1999·Granted Feb 26, 2002·404 cites·41 claims
- 0498US10191005B2Ultra-compact, passive, varactor-based wireless sensor using quantum capacitance effect in grapheneUNIV MINNESOTA·Filed 2016·Granted Jan 29, 2019·15 cites·16 claims
- 0598US9513244B2Ultra-compact, passive, varactor-based wireless sensor using quantum capacitance effect in grapheneKOESTER STEVEN J·Filed 2012·Granted Dec 6, 2016·50 cites·19 claims
- 0697US7985633B2Embedded DRAM integrated circuits with extremely thin silicon-on-insulator pass transistorsIBM·Filed 2007·Granted Jul 26, 2011·57 cites·5 claims
- 0797US7652332B2Extremely-thin silicon-on-insulator transistor with raised source/drainIBM·Filed 2007·Granted Jan 26, 2010·50 cites·13 claims
- 0896US10888875B2Electrodes formed from 2D materials for dielectrophoresis and systems and methods for utilizing the sameUNIV MINNESOTA·Filed 2018·Granted Jan 12, 2021·7 cites·20 claims
- 0996US8018007B2Selective floating body SRAM cellIBM·Filed 2009·Granted Sep 13, 2011·34 cites·13 claims
- 1095US11079371B2Chemical sensors with non-covalent surface modification of grapheneUNIV MINNESOTA·Filed 2019·Granted Aug 3, 2021·15 cites·5 claims
- 1195US9494043B1Turbine blade having contoured tip shroudSIEMENS ENERGY INC·Filed 2015·Granted Nov 15, 2016·10 cites·20 claims
- 1295US7510904B2Structure for and method of fabricating a high-speed CMOS-compatible Ge-on-insulator photodetectorIBM·Filed 2006·Granted Mar 31, 2009·22 cites·14 claims
- 1394US11867596B2Chemical sensors with non-covalent, electrostatic surface modification of grapheneUNIV MINNESOTA·Filed 2022·Granted Jan 9, 2024·2 cites·6 claims
- 1494US11384759B2Vapor injection double reed valve plateHANON SYSTEMS·Filed 2020·Granted Jul 12, 2022·3 cites·19 claims
- 1594US11293914B2Chemical sensors with non-covalent, electrostatic surface modification of grapheneUNIV MINNESOTA·Filed 2019·Granted Apr 5, 2022·9 cites·9 claims
- 1694US8258031B2Fabrication of a vertical heterojunction tunnel-FETLAUER ISAAC·Filed 2010·Granted Sep 4, 2012·19 cites·16 claims
- 1794US8080805B2FET radiation monitorGORDON MICHAEL·Filed 2010·Granted Dec 20, 2011·16 cites·35 claims
- 1894US7989900B2Semiconductor structure including gate electrode having laterally variable work functionIBM·Filed 2009·Granted Aug 2, 2011·103 cites·8 claims
- 1993US8716810B2Selective floating body SRAM cellIBM·Filed 2012·Granted May 6, 2014·11 cites·3 claims
- 2093US7871869B2Extremely-thin silicon-on-insulator transistor with raised source/drainIBM·Filed 2009·Granted Jan 18, 2011·24 cites·7 claims
- 2192US12196209B2Multipath passive discharge valve for a compressorHANON SYSTEMS·Filed 2024·Granted Jan 14, 2025·2 cites·20 claims
- 2292US11662325B2Systems and methods for measuring kinetic response of chemical sensor elementsBOSTON SCIENT SCIMED INC·Filed 2019·Granted May 30, 2023·4 cites·20 claims
- 2392US10060270B2Internal cooling system with converging-diverging exit slots in trailing edge cooling channel for an airfoil in a turbine engineSIEMENS ENERGY INC·Filed 2015·Granted Aug 28, 2018·9 cites·17 claims
- 2492US8426921B2Three-dimensional integrated circuits and techniques for fabrication thereofASSEFA SOLOMON·Filed 2011·Granted Apr 23, 2013·16 cites·13 claims
- 2592US8129811B2Techniques for three-dimensional circuit integrationASSEFA SOLOMON·Filed 2011·Granted Mar 6, 2012·15 cites·12 claims
- 2692US7897428B2Three-dimensional integrated circuits and techniques for fabrication thereofIBM·Filed 2008·Granted Mar 1, 2011·20 cites·12 claims
- 2792US7282425B2Structure and method of integrating compound and elemental semiconductors for high-performance CMOSIBM·Filed 2005·Granted Oct 16, 2007·22 cites·6 claims
- 2892US6740535B2Enhanced T-gate structure for modulation doped field effect transistorsIBM·Filed 2002·Granted May 25, 2004·53 cites·17 claims
- 2991US12006938B1Injection valve assembly for a compressorHANON SYSTEMS·Filed 2023·Granted Jun 11, 2024·2 cites·19 claims
- 3091US8674515B23D integrated circuits structureFAROOQ MUKTA G·Filed 2012·Granted Mar 18, 2014·11 cites·11 claims
- 3191US7138697B2Structure for and method of fabricating a high-speed CMOS-compatible Ge-on-insulator photodetectorIBM·Filed 2004·Granted Nov 21, 2006·54 cites·39 claims
- 3291US6805962B2Method of creating high-quality relaxed SiGe-on-insulator for strained Si CMOS applicationsIBM·Filed 2002·Granted Oct 19, 2004·52 cites·22 claims
- 3390US10712302B2Ultra-compact, passive, varactor-based wireless sensor using quantum capacitance effect in grapheneUNIV MINNESOTA·Filed 2018·Granted Jul 14, 2020·3 cites·18 claims
- 3489US11923419B2Non-covalent modification of graphene-based chemical sensorsUNIV MINNESOTA·Filed 2020·Granted Mar 5, 2024·2 cites·20 claims
- 3589US6858502B2High speed composite p-channel Si/SiGe heterostructure for field effect devicesIBM·Filed 2001·Granted Feb 22, 2005·39 cites·30 claims
- 3688US12098719B2Vapor injection structure for a compressorHANON SYSTEMS·Filed 2023·Granted Sep 24, 2024·1 cites·16 claims
- 3788US11908901B1Graphene varactor including ferroelectric materialUNIV MINNESOTA·Filed 2020·Granted Feb 20, 2024·4 cites·20 claims
- 3888US7964896B2Buried channel MOSFET using III-V compound semiconductors and high k gate dielectricsIBM·Filed 2008·Granted Jun 21, 2011·13 cites·29 claims
- 3988US7955887B2Techniques for three-dimensional circuit integrationIBM·Filed 2008·Granted Jun 7, 2011·12 cites·11 claims
- 4087US8587121B2Backside dummy plugs for 3D integrationKOESTER STEVEN J·Filed 2010·Granted Nov 19, 2013·10 cites·16 claims
- 4186US9631506B2Turbine abradable layer with composite non-inflected bi-angle ridges and groovesSIEMENS AG·Filed 2015·Granted Apr 25, 2017·4 cites·20 claims
- 4286US8492869B23D integrated circuit device having lower-cost active circuitry layers stacked before higher-cost active circuitry layerFAROOQ MUKTA G·Filed 2012·Granted Jul 23, 2013·5 cites·20 claims
- 4386US6784466B2Si/SiGe optoelectronic integrated circuitsIBM·Filed 2002·Granted Aug 31, 2004·34 cites·34 claims
- 4485US7521376B2Method of forming a semiconductor structure using a non-oxygen chalcogen passivation treatmentIBM·Filed 2005·Granted Apr 21, 2009·10 cites·9 claims
- 4584US8415772B2Method to prevent surface decomposition of III-V compound semiconductorsDE SOUZA JOEL P·Filed 2012·Granted Apr 9, 2013·5 cites·12 claims
- 4684US8298914B23D integrated circuit device fabrication using interface wafer as permanent carrierFAROOQ MUKTA G·Filed 2008·Granted Oct 30, 2012·7 cites·10 claims
- 4784US7393735B2Structure for and method of fabricating a high-mobility field-effect transistorIBM·Filed 2005·Granted Jul 1, 2008·10 cites·12 claims
- 4883US8969992B2Autonomous integrated circuitsIBM·Filed 2014·Granted Mar 3, 2015·2 cites·9 claims
- 4983US8796735B2Fabrication of a vertical heterojunction tunnel-FETLAUER ISAAC·Filed 2012·Granted Aug 5, 2014·6 cites·11 claims
- 5083US8722492B2Nanowire pin tunnel field effect devicesBANGSARUNTIP SARUNYA·Filed 2010·Granted May 13, 2014·6 cites·18 claims
Showing the top 50 of 112 patent records by PatentIndex Score.
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