Inventor · disambiguated record
Markus Weyers
Also filed as: WEYERS MARKUS
10 granted patents·3 pending applications·41 citations·filing 2002–2018
84Inventor score
Files withFORSCHUNGSVERBUND BERLIN EV3FREIBERGER COMPOUND MAT GMBH3BOSCH GMBH ROBERT1FORSCHUNGSVERBUND BERLING E V1HENNIG CHRISTIAN1
Top patents by PatentIndex Score
13 records- 0190US9331246B2P-contact and light-emitting diode for the ultraviolet spectral rangeKNEISSL MICHAEL·Filed 2010·Granted May 3, 2016·26 cites·18 claims
- 0273US9431557B2Photodetector for ultraviolet radiation, having a high sensitivity and a low dark currentKNIGGE ANDREA·Filed 2012·Granted Aug 30, 2016·4 cites·8 claims
- 0355US8003996B2Light-emitting semiconductor component comprising electroluminescent and photoluminescent layers and associated method of productionFORSCHUNGSVERBUND BERLIN EV·Filed 2007·Granted Aug 23, 2011·2 cites·14 claims
- 0454US10584427B2Processes for producing III-N single crystals, and III-N single crystalFREIBERGER COMPOUND MAT GMBH·Filed 2018·Granted Mar 10, 2020·0 cites·14 claims
- 0554US8591652B2Semi-conductor substrate and method of masking layer for producing a free-standing semi-conductor substrate by means of hydride-gas phase epitaxyHENNIG CHRISTIAN·Filed 2006·Granted Nov 26, 2013·1 cites·20 claims
- 0650US6734476B2Semiconductor devices having group III-V compound layersIXYS CORP·Filed 2002·Granted May 11, 2004·8 cites·18 claims
- 0749US9896779B2Method for producing III-N single crystals, and III-N single crystalFREIBERGER COMPOUND MAT GMBH·Filed 2013·Granted Feb 20, 2018·0 cites·20 claims
- 0847US9008145B2System for frequency conversion, semiconducting device and method for operating and manufacturing the sameFORSCHUNGSVERBUND BERLIN EV·Filed 2013·Granted Apr 14, 2015·0 cites·19 claims
- 0945US2015001409A1Optical AssemblyBOSCH GMBH ROBERT·Filed 2014·Application pending·0 cites
- 1038US2008171133A1Method For the Production of C-Plane Oriented Gan Substrates or AlxGa1-xN SubstratesFREIBERGER COMPOUND MAT GMBH·Filed 2006·Application pending·0 cites
- 1134US8846425B2Diode laser and method for manufacturing a high-efficiency diode laserFORSCHUNGSVERBUND BERLIN EV·Filed 2012·Granted Sep 30, 2014·0 cites·14 claims
- 1230US2004144984A1Fabrication method for surface emitting semiconductor device and surface emitting semiconductor deviceFORSCHUNGSVERBUND BERLING E V·Filed 2003·Application pending·0 cites
- 1324US8824518B2Two-cavity surface-emitting laserTRÄNKLE GÜNTHER·Filed 2010·Granted Sep 2, 2014·0 cites·14 claims
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