Inventor · disambiguated record
Marco Racanelli
Also filed as: RACANELLI MARCO
58 granted patents·1 pending application·752 citations·filing 1992–2021
99Inventor score
Files withNEWPORT FAB LLC45MOTOROLA INC7KAR-ROY ARJUN2BLASCHKE VOLKER1NEWPORT FAB DBA JAZZ SEMICOND1
Top patents by PatentIndex Score
59 records- 0192US7589009B1Method for fabricating a top conductive layer in a semiconductor die and related structureNEWPORT FAB LLC·Filed 2006·Granted Sep 15, 2009·21 cites·20 claims
- 0289US6777777B1High density composite MIM capacitor with flexible routing in semiconductor diesNEWPORT FAB LLC·Filed 2003·Granted Aug 17, 2004·54 cites·12 claims
- 0388US6680521B1High density composite MIM capacitor with reduced voltage dependence in semiconductor diesNEWPORT FAB LLC·Filed 2003·Granted Jan 20, 2004·46 cites·13 claims
- 0488US5532175AMethod of adjusting a threshold voltage for a semiconductor device fabricated on a semiconductor on insulator substrateMOTOROLA INC·Filed 1995·Granted Jul 2, 1996·115 cites·20 claims
- 0586US6430028B1Method for fabrication of an MIM capacitor and related structureNEWPORT FAB LLC·Filed 2000·Granted Aug 6, 2002·38 cites·10 claims
- 0685US7897484B2Fabricating a top conductive layer in a semiconductor dieNEWPORT FAB LLC·Filed 2009·Granted Mar 1, 2011·9 cites·19 claims
- 0784US6744322B1High performance BiFET low noise amplifierSKYWORKS SOLUTIONS INC·Filed 2002·Granted Jun 1, 2004·41 cites·22 claims
- 0883US7704874B1Method for fabricating a frontside through-wafer via in a processed wafer and related structureNEWPORT FAB LLC·Filed 2006·Granted Apr 27, 2010·9 cites·19 claims
- 0983US6759729B1Temperature insensitive resistor in an IC chipNEWPORT FAB LLC·Filed 2002·Granted Jul 6, 2004·32 cites·21 claims
- 1082US8598713B2Deep silicon via for grounding of circuits and devices, emitter ballasting and isolationBLASCHKE VOLKER·Filed 2010·Granted Dec 3, 2013·7 cites·20 claims
- 1181US8212331B1Method for fabricating a backside through-wafer via in a processed wafer and related structureKAR-ROY ARJUN·Filed 2007·Granted Jul 3, 2012·8 cites·18 claims
- 1280US6410975B1Bipolar transistor with reduced base resistanceNEWPORT FAB LLC·Filed 2000·Granted Jun 25, 2002·20 cites·11 claims
- 1378US7041569B1Method for fabricating a high density composite MIM capacitor with reduced voltage dependence in semiconductor diesNEWPORT FAB LLC·Filed 2003·Granted May 9, 2006·22 cites·9 claims
- 1476US6534372B1Method for fabricating a self-aligned emitter in a bipolar transistorNEWPORT FAB LLC·Filed 2000·Granted Mar 18, 2003·18 cites·41 claims
- 1576US5232547ASimultaneously measuring thickness and composition of a filmMOTOROLA INC·Filed 1992·Granted Aug 3, 1993·35 cites·6 claims
- 1674US6746928B1Method for opening a semiconductor region for fabricating an HBTNEWPORT FAB LLC·Filed 2001·Granted Jun 8, 2004·18 cites·30 claims
- 1774US6680235B1Method for fabricating a selective eptaxial HBT emitterNEWPORT FAB LLC·Filed 2002·Granted Jan 20, 2004·16 cites·11 claims
- 1873US11164740B2Semiconductor structure having porous semiconductor layer for RF devicesNEWPORT FAB LLC·Filed 2019·Granted Nov 2, 2021·1 cites·20 claims
- 1973US10991631B2High performance SiGe heterojunction bipolar transistors built on thin-film silicon-on-insulator substrates for radio frequency applicationsNEWPORT FAB LLC·Filed 2018·Granted Apr 27, 2021·1 cites·18 claims
- 2073US10177045B2Bulk CMOS RF switch with reduced parasitic capacitanceNEWPORT FAB LLC·Filed 2018·Granted Jan 8, 2019·1 cites·9 claims
- 2173US7078310B1Method for fabricating a high density composite MIM capacitor with flexible routing in semiconductor diesNEWPORT FAB LLC·Filed 2004·Granted Jul 18, 2006·18 cites·8 claims
- 2273US5719081AFabrication method for a semiconductor device on a semiconductor on insulator substrate using a two stage threshold adjust implantMOTOROLA INC·Filed 1995·Granted Feb 17, 1998·35 cites·20 claims
- 2368US9105681B2Method for forming deep silicon via for grounding of circuits and devices, emitter ballasting and isolationNEWPORT FAB LLC·Filed 2012·Granted Aug 11, 2015·2 cites·16 claims
- 2467US12347673B2Method for forming a semiconductor structure having a porous semiconductor layer in RF devicesNEWPORT FAB LLC·Filed 2021·Granted Jul 1, 2025·0 cites·20 claims
- 2566US7154161B1Composite ground shield for passive components in a semiconductor dieNEWPORT FAB LLC·Filed 2004·Granted Dec 26, 2006·13 cites·19 claims
- 2665US6830982B1Method for reducing extrinsic base resistance and improving manufacturability in an NPN transistorNEWPORT FAB LLC·Filed 2002·Granted Dec 14, 2004·10 cites·8 claims
- 2765US5670389ASemiconductor-on-insulator device having a laterally-graded channel region and method of makingMOTOROLA INC·Filed 1996·Granted Sep 23, 1997·28 cites·9 claims
- 2864US6784467B1Method for fabricating a self-aligned bipolar transistor and related structureNEWPORT FAB LLC·Filed 2002·Granted Aug 31, 2004·9 cites·17 claims
- 2964US6716711B1Method for fabricating a self-aligned emitter in a bipolar transistorNEWPORT FAB LLC·Filed 2002·Granted Apr 6, 2004·9 cites·36 claims
- 3063US9136157B1Deep N wells in triple well structuresKAR-ROY ARJUN·Filed 2005·Granted Sep 15, 2015·3 cites·13 claims
- 3161US6486532B1Structure for reduction of base and emitter resistance and related methodNEWPORT FAB LLC·Filed 2000·Granted Nov 26, 2002·9 cites·19 claims
- 3260US9673081B2Isolated through silicon via and isolated deep silicon via having total or partial isolationNEWPORT FAB LLC·Filed 2013·Granted Jun 6, 2017·1 cites·9 claims
- 3360US6617619B1Structure for a selective epitaxial HBT emitterNEWPORT FAB LLC·Filed 2002·Granted Sep 9, 2003·7 cites·10 claims
- 3459US6995068B1Double-implant high performance varactor and method for manufacturing sameNEWPORT FAB LLC·Filed 2000·Granted Feb 7, 2006·10 cites·21 claims
- 3556US6867477B2High gain bipolar transistorNEWPORT FAB LLC·Filed 2002·Granted Mar 15, 2005·7 cites·15 claims
- 3655US7078786B1Composite series resistor having reduced temperature sensitivity in an IC chipNEWPORT FAB DBA JAZZ SEMICOND·Filed 2004·Granted Jul 18, 2006·9 cites·11 claims
- 3755US6673688B1Method for eliminating collector-base band gap in an HBTNEWPORT FAB LLC·Filed 2002·Granted Jan 6, 2004·5 cites·13 claims
- 3854US10622262B2High performance SiGe heterojunction bipolar transistors built on thin film silicon-on-insulator substrates for radio frequency applicationsNEWPORT FAB LLC·Filed 2017·Granted Apr 14, 2020·0 cites·22 claims
- 3954US7052966B2Deep N wells in triple well structures and method for fabricating sameNEWPORT FAB LLC·Filed 2003·Granted May 30, 2006·6 cites·17 claims
- 4054US6475849B2Method for reducing base resistance in a bipolar transistorNEWPORT FAB LLC·Filed 2002·Granted Nov 5, 2002·4 cites·25 claims
- 4152US11195920B2Semiconductor structure having porous semiconductor segment for RF devices and bulk semiconductor region for non-RF devicesNEWPORT FAB LLC·Filed 2019·Granted Dec 7, 2021·0 cites·19 claims
- 4252US7745886B2Semiconductor on insulator (SOI) switching circuitNEWPORT FAB LLC·Filed 2008·Granted Jun 29, 2010·0 cites·19 claims
- 4352US7235861B1NPN transistor having reduced extrinsic base resistance and improved manufacturabilityNEWPORT FAB LLC·Filed 2004·Granted Jun 26, 2007·4 cites·7 claims
- 4452US6639256B2Structure for eliminating collector-base band gap discontinuity in an HBTNEWPORT FAB LLC·Filed 2002·Granted Oct 28, 2003·4 cites·12 claims
- 4552US5780352AMethod of forming an isolation oxide for silicon-on-insulator technologyMOTOROLA INC·Filed 1995·Granted Jul 14, 1998·17 cites·18 claims
- 4651US10177044B2Bulk CMOS RF switch with reduced parasitic capacitanceNEWPORT FAB LLC·Filed 2017·Granted Jan 8, 2019·0 cites·8 claims
- 4749US6893931B1Reducing extrinsic base resistance in an NPN transistorNEWPORT FAB LLC·Filed 2002·Granted May 17, 2005·3 cites·23 claims
- 4849US6627511B1Reduced stress isolation for SOI devices and a method for fabricatingMOTOROLA INC·Filed 1995·Granted Sep 30, 2003·17 cites·16 claims
- 4948US6583494B2Reduced base resistance in a bipolar transistorNEWPORT FAB LLC·Filed 2002·Granted Jun 24, 2003·2 cites·22 claims
- 5045US9941353B2Structure and method for mitigating substrate parasitics in bulk high resistivity substrate technologyNEWPORT FAB LLC·Filed 2016·Granted Apr 10, 2018·0 cites·18 claims
Showing the top 50 of 59 patent records by PatentIndex Score.
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