Inventor · disambiguated record
Jin-Il Lee
Also filed as: LEE JIN · LEE JIN-I · LEE JIN-IL
39 granted patents·19 pending applications·264 citations·filing 2001–2023
97Inventor score
Top patents by PatentIndex Score
58 records- 0196US7943502B2Method of forming a phase change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted May 17, 2011·26 cites·12 claims
- 0294US9997534B2Vertical memory devicesSON YONG HOON·Filed 2016·Granted Jun 12, 2018·14 cites·19 claims
- 0394US7727884B2Methods of forming a semiconductor device including a phase change material layerSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 1, 2010·19 cites·20 claims
- 0494US7569417B2Method of forming a phase changeable material layer, a method of manufacturing a phase changeable memory unit, and a method of manufacturing a phase changeable semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 4, 2009·38 cites·27 claims
- 0594US7271055B2Methods of forming low leakage currents metal-insulator-metal (MIM) capacitors and related MIM capacitorsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 18, 2007·26 cites·31 claims
- 0692US9893077B2Memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Feb 13, 2018·9 cites·12 claims
- 0790US8553471B2Data output buffer and memory deviceKIM SI-HONG·Filed 2011·Granted Oct 8, 2013·17 cites·24 claims
- 0889US9905568B2Nonvolatile memory device and a method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Feb 27, 2018·7 cites·20 claims
- 0988US8034683B2Method of forming a phase change material layer, method of forming a phase change memory device using the same, and a phase change memory device so formedSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 11, 2011·8 cites·20 claims
- 1088US7759667B2Phase change memory device including resistant materialSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 20, 2010·17 cites·9 claims
- 1187US8263963B2Phase change memory devicePARK YOUNG-LIM·Filed 2011·Granted Sep 11, 2012·3 cites·7 claims
- 1285US7867880B2Metal precursors for low temperature deposition and methods of forming a metal thin layer and manufacturing a phase-change memory device using the metal precursorsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 11, 2011·6 cites·14 claims
- 1384US8580648B2Capacitor having an electrode structure, method of manufacturing a capacitor having an electrode structure and semiconductor device having an electrode structureCHOI SUK-HUN·Filed 2011·Granted Nov 12, 2013·8 cites·2 claims
- 1482US7514315B2Methods of forming capacitor structures having aluminum oxide diffusion barriersSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 7, 2009·8 cites·8 claims
- 1579US10079203B2Vertical memory devices and methods of manufacturing the sameSON YONG HOON·Filed 2016·Granted Sep 18, 2018·3 cites·15 claims
- 1678US10580736B2Semiconductor device including conductive structure having nucleation structure and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Mar 3, 2020·0 cites·19 claims
- 1778US8531898B2On-die termination circuit, data output buffer and semiconductor memory deviceSEOL HO-SEOK·Filed 2011·Granted Sep 10, 2013·7 cites·19 claims
- 1878US7803654B2Variable resistance non-volatile memory cells and methods of fabricating sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 28, 2010·6 cites·25 claims
- 1977US8703237B2Methods of forming a material layer and methods of fabricating a memory devicePARK HYE-YOUNG·Filed 2009·Granted Apr 22, 2014·3 cites·14 claims
- 2074US11175300B2Biological sample processing apparatusBIONEER CORP·Filed 2017·Granted Nov 16, 2021·1 cites·13 claims
- 2174US10366955B2Semiconductor device including conductive structure having nucleation structure and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jul 30, 2019·1 cites·20 claims
- 2273US9850530B2Automatic real-time PCR system for the various analysis of biological samplePARK HAN OH·Filed 2011·Granted Dec 26, 2017·3 cites·32 claims
- 2373US7838326B2Methods of fabricating semiconductor device including phase change layerSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Nov 23, 2010·5 cites·20 claims
- 2470US8645790B2Data processing device and method using error detection code, method of compensating for data skew, and semiconductor device having the data processing deviceLEE JIN-IL·Filed 2011·Granted Feb 4, 2014·3 cites·17 claims
- 2570US8142846B2Method of forming phase change material layer using Ge(II) source, and method of fabrication phase change memory deviceBAE BYOUNG-JAE·Filed 2008·Granted Mar 27, 2012·4 cites·19 claims
- 2667US10847464B2Semiconductor device including conductive structure having nucleation structure and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Nov 24, 2020·0 cites·20 claims
- 2766US7432183B2Methods of manufacturing a thin film including zirconium titanium oxide and methods of manufacturing a gate structure, a capacitor and a flash memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 7, 2008·3 cites·34 claims
- 2865US7049232B2Methods for forming ruthenium films with β-diketone containing ruthenium complexes and method for manufacturing metal-insulator-metal capacitor using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted May 23, 2006·8 cites·26 claims
- 2965US2012319069A1Phase Change Memory DevicePARK YOUNG-LIM·Filed 2012·Application pending·0 cites
- 3064US10103163B2Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Oct 16, 2018·1 cites·20 claims
- 3162US10559580B2Semiconductor memory deviceSON YONG HOON·Filed 2016·Granted Feb 11, 2020·2 cites·19 claims
- 3260US8525244B2Germanium compound, semiconductor device fabricated using the same, and methods of forming the samePARK HYE-YOUNG·Filed 2007·Granted Sep 3, 2013·0 cites·14 claims
- 3359US8834968B2Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Sep 16, 2014·0 cites·15 claims
- 3458US8187914B2Methods of forming a phase change memory deviceLEE JIN-IL·Filed 2010·Granted May 29, 2012·1 cites·15 claims
- 3558US2023372945A1Nucleic acid amplification test apparatus, and automatic sample analysis system having sameBIONEER CORP·Filed 2021·Application pending·0 cites
- 3656US2009075420A1Method of forming chalcogenide layer including te and method of fabricating phase-change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 3756US2024413240A1Semiconductor device and manufacturing method of the sameMAGNACHIP SEMICONDUCTOR LTD·Filed 2023·Application pending·0 cites
- 3855US8852686B2Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory deviceBAE BYOUNG-JAE·Filed 2012·Granted Oct 7, 2014·0 cites·19 claims
- 3955US2008096386A1Method of forming a phase-changeable layer and method of manufacturing a semiconductor memory device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 4054US7091102B2Methods of forming integrated circuit devices having a capacitor with a hydrogen barrier spacer on a sidewall thereof and integrated circuit devices formed therebySAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Aug 15, 2006·4 cites·63 claims
- 4152US8133758B2Method of fabricating phase-change memory device having TiC layerOH GYU-HWAN·Filed 2009·Granted Mar 13, 2012·0 cites·12 claims
- 4250US8021977B2Methods of forming contact structures and semiconductor devices fabricated using contact structuresSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Sep 20, 2011·0 cites·20 claims
- 4350US2009195962A1Multilayer electrode structures including capacitor structures having aluminum oxide diffusion barriersSAMSUNG ELECTRONICS CO LTD·Filed 2009·Application pending·0 cites
- 4449US7034350B2Capacitors including a cavity containing a buried layerSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Apr 25, 2006·3 cites·10 claims
- 4549US2009280599A1Phase change memory device and method of fabricationSAMSUNG ELECTRONICS CO LTD·Filed 2009·Application pending·0 cites
- 4649US2006148193A1Methods for forming ruthenium films with beta-diketone containing ruthenium complexes and method for manufacturing metal-insulator-metal capacitor using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 4748US2012149166A1METHOD OF FORMING TITANIUM NITRADE (TiN) FILM, NONVOLATILE MEMORY DEVICE USING THE TiN FILM, AND METHOD OF MANUFACTURING THE NONVOLATILE MEMORY DEVICEPARK YOUNG-LIM·Filed 2011·Application pending·0 cites
- 4847US2008272355A1Phase change memory device and method for forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 4944US2007018219A1Unit cell structure, method of manufacturing the same, non-volatile semiconductor device having the unit cell structure and method of manufacturing the non-volatile semiconductor deviceLIM HAN-JIN·Filed 2006·Application pending·0 cites
- 5043US2007148933A1Nonvolatile memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
Showing the top 50 of 58 patent records by PatentIndex Score.
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