Inventor · disambiguated record
Ilya V. Karpov
Also filed as: KARPOV ILYA · KARPOV ILYA V
49 granted patents·16 pending applications·436 citations·filing 2002–2023
98Inventor score
Top patents by PatentIndex Score
65 records- 0197US7534625B2Phase change memory with damascene memory elementKARPOV ILYA V·Filed 2006·Granted May 19, 2009·86 cites·9 claims
- 0295US7135696B2Phase change memory with damascene memory elementINTEL CORP·Filed 2004·Granted Nov 14, 2006·67 cites·27 claims
- 0393US7864567B2Programming a normally single phase chalcogenide material for use as a memory of FPLAOVONYX INC·Filed 2008·Granted Jan 4, 2011·25 cites·29 claims
- 0492US8513576B2Dual resistance heater for phase change devices and manufacturing method thereofKIM YUDONG·Filed 2010·Granted Aug 20, 2013·13 cites·17 claims
- 0592US8377741B2Self-heating phase change memory cell architectureST MICROELECTRONICS SRL·Filed 2008·Granted Feb 19, 2013·27 cites·35 claims
- 0690US8952299B2Dual resistance heater for phase change devices and manufacturing method thereofMICRON TECHNOLOGY INC·Filed 2013·Granted Feb 10, 2015·5 cites·22 claims
- 0790US7414883B2Programming a normally single phase chalcogenide material for use as a memory or FPLAINTEL CORP·Filed 2006·Granted Aug 19, 2008·19 cites·32 claims
- 0889US7880123B2Dual resistance heater for phase change devices and manufacturing method thereofKIM YUDONG·Filed 2005·Granted Feb 1, 2011·14 cites·8 claims
- 0987US7910904B2Multi-level phase change memoryOVONYX INC·Filed 2005·Granted Mar 22, 2011·16 cites·8 claims
- 1086US7894237B2Programming multilevel cell phase change memoriesINTEL CORP·Filed 2008·Granted Feb 22, 2011·17 cites·14 claims
- 1185US7655938B2Phase change memory with U-shaped chalcogenide cellKUO CHARLES C·Filed 2005·Granted Feb 2, 2010·14 cites·14 claims
- 1284US8187946B2Manufacturing a phase change memory device having a ring heaterKARPOV ILYA V·Filed 2010·Granted May 29, 2012·8 cites·12 claims
- 1384US7709822B2Phase change memory and manufacturing method thereofSTMICROELETRONICS S R L·Filed 2007·Granted May 4, 2010·12 cites·30 claims
- 1483US7390691B2Increasing phase change memory column landing marginINTEL CORP·Filed 2005·Granted Jun 24, 2008·11 cites·20 claims
- 1580US11222885B2Backend electrostatic discharge diode apparatus and method of fabricating the sameINTEL CORP·Filed 2018·Granted Jan 11, 2022·2 cites·21 claims
- 1680US8891319B2Verify or read pulse for phase change memory and switchCASTRO HERNAN·Filed 2010·Granted Nov 18, 2014·7 cites·16 claims
- 1780US7990761B2Immunity of phase change material to disturb in the amorphous phaseOVONYX INC·Filed 2008·Granted Aug 2, 2011·7 cites·76 claims
- 1879US7965545B2Reducing temporal changes in phase change memoriesINTEL CORP·Filed 2008·Granted Jun 21, 2011·8 cites·13 claims
- 1978US9036409B2Immunity of phase change material to disturb in the amorphous phaseOVONYX INC·Filed 2014·Granted May 19, 2015·3 cites·10 claims
- 2071US7259023B2Forming phase change memory arraysINTEL CORP·Filed 2004·Granted Aug 21, 2007·21 cites·9 claims
- 2170US12302643B2Backend electrostatic discharge diode apparatus and method of fabricating the sameINTEL CORP·Filed 2022·Granted May 13, 2025·0 cites·20 claims
- 2268US6995446B2Isolating phase change memories with schottky diodes and guard ringsOVONYX INC·Filed 2002·Granted Feb 7, 2006·13 cites·13 claims
- 2366US7420200B2Damascene phase change memoryOVONYX INC·Filed 2007·Granted Sep 2, 2008·2 cites·16 claims
- 2465US9747975B2Multi-level phase change memoryKUO CHARLES C·Filed 2011·Granted Aug 29, 2017·1 cites·13 claims
- 2565US9159915B2Phase change memory with threshold switch select deviceOVONYX INC·Filed 2013·Granted Oct 13, 2015·2 cites·14 claims
- 2665US8130536B2Read window in chalcogenide semiconductor memoriesKARPOV ILYA V·Filed 2006·Granted Mar 6, 2012·5 cites·9 claims
- 2764US8228722B2Reducing temporal changes in phase change memoriesSAVRANSKY SEMYON D·Filed 2011·Granted Jul 24, 2012·2 cites·13 claims
- 2864US7863596B2Ring heater for a phase change memory deviceST MICROELECTRONICS SRL·Filed 2006·Granted Jan 4, 2011·4 cites·25 claims
- 2963US9570163B2Immunity of phase change material to disturb in the amorphous phaseOVONYX MEMORY TECH LLC·Filed 2015·Granted Feb 14, 2017·1 cites·11 claims
- 3063US8026173B2Semiconductor structure, in particular phase change memory device having a uniform height heaterST MICROELECTRONICS SRL·Filed 2008·Granted Sep 27, 2011·3 cites·12 claims
- 3161US10522757B2Dual resistive-material regions for phase change memory devicesMICRON TECHNOLOGY INC·Filed 2017·Granted Dec 31, 2019·0 cites·12 claims
- 3260US7411268B2Fabricating deeper and shallower trenches in semiconductor structuresINTEL CORP·Filed 2004·Granted Aug 12, 2008·10 cites·4 claims
- 3360US2024186127A1Sputter targets for self-doped source and drain contactsINTEL CORP·Filed 2023·Application pending·0 cites
- 3459US8637342B2Phase change memory with threshold switch select deviceKARPOV ILYA V·Filed 2005·Granted Jan 28, 2014·3 cites·17 claims
- 3559US7211819B2Damascene phase change memoryINTEL CORP·Filed 2003·Granted May 1, 2007·4 cites·20 claims
- 3659US2025212441A1Incorporation of semiconductor doping materials in metal contacts via reactive sputteringINTEL CORP·Filed 2023·Application pending·0 cites
- 3757US2025212507A1Cmos metal contacts with dopant diffusion barriersINTEL CORP·Filed 2023·Application pending·0 cites
- 3857US2025140543A1Low Temperature Deposition of Hydrogen-Free Diamond-Like Carbon FilmsINTEL CORP·Filed 2023·Application pending·0 cites
- 3957US2025218942A1Via aligned with adjacent interconnect layersINTEL CORP·Filed 2023·Application pending·0 cites
- 4057US2025220958A1Source/drain contact trench with dielectric liner on contact metalINTEL CORP·Filed 2023·Application pending·0 cites
- 4156US8634226B2Immunity of phase change material to disturb in the amorphous phaseGORDON GEORGE·Filed 2011·Granted Jan 21, 2014·1 cites·5 claims
- 4254US10522756B2Dual resistance heater for phase change memory devicesMICRON TECHNOLOGY INC·Filed 2015·Granted Dec 31, 2019·0 cites·8 claims
- 4354US2023420246A1Sputter targets and sources for self-doped source and drain contactsINTEL CORP·Filed 2022·Application pending·0 cites
- 4453US9251895B2Immunity of phase change material to disturb in the amorphous phaseOVONYX INC·Filed 2014·Granted Feb 2, 2016·0 cites·5 claims
- 4553US7811885B2Method for forming a phase change deviceOVONYX INC·Filed 2007·Granted Oct 12, 2010·0 cites·10 claims
- 4653US2024105588A1Integrated circuit (ic) device with multilayer metal lineINTEL CORP·Filed 2022·Application pending·0 cites
- 4752US8861293B2Immunity of phase change material to disturb in the amorphous phaseOVONYX INC·Filed 2013·Granted Oct 14, 2014·0 cites·5 claims
- 4852US2024006506A1Low-resistance and thermally stable contacts with phosphide or arsenide metal compound layersINTEL CORP·Filed 2022·Application pending·0 cites
- 4951US7754516B2Fabricating sub-lithographic contactsJIN MING·Filed 2008·Granted Jul 13, 2010·0 cites·2 claims
- 5050US2024006533A1Low-resistance and thermally stable contacts with boride, indium, or gallium metal compound layersINTEL CORP·Filed 2022·Application pending·0 cites
Showing the top 50 of 65 patent records by PatentIndex Score.
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