Inventor · disambiguated record
Eun-Hong Lee
Also filed as: LEE EUN-HONG
29 granted patents·4 pending applications·521 citations·filing 2004–2012
97Inventor score
Top patents by PatentIndex Score
33 records- 0198US8043926B2Nonvolatile memory devices including oxygen-deficient metal oxide layers and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Oct 25, 2011·48 cites·10 claims
- 0298US7842991B2Nonvolatile memory devices including oxygen-deficient metal oxide layers and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 30, 2010·99 cites·9 claims
- 0397US7417271B2Electrode structure having at least two oxide layers and non-volatile memory device having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 26, 2008·97 cites·19 claims
- 0495US7491987B2Junction field effect thin film transistorSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Feb 17, 2009·56 cites·15 claims
- 0595US7352037B2Semiconductor device and random access memory having single gate electrode corresponding to a pair of channel regionsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 1, 2008·32 cites·21 claims
- 0694US7498600B2Variable resistance random access memory device and a method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 3, 2009·63 cites·18 claims
- 0793US7345898B2Complementary nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 18, 2008·22 cites·25 claims
- 0885US8007617B2Method of transferring carbon nanotubesSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 30, 2011·10 cites·16 claims
- 0983US7436704B2Non-volatile memory devices and method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 14, 2008·14 cites·26 claims
- 1081US8022725B2Convertible logic circuits comprising carbon nanotube transistors having ambipolar charateristicsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 20, 2011·9 cites·19 claims
- 1179US8823077B2Semiconductor device and method of manufacturing the sameLEE EUN-HONG·Filed 2011·Granted Sep 2, 2014·6 cites·11 claims
- 1278US7759771B2Resistance random access memory and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 20, 2010·8 cites·19 claims
- 1376US9006710B2Type-switching transistors, electronic devices including the same, and methods of operating the type-switching transistors and electronic devicesLEE EUN-HONG·Filed 2012·Granted Apr 14, 2015·4 cites·35 claims
- 1476US7714313B2Resistive RAM having at least one varistor and methods of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 11, 2010·9 cites·28 claims
- 1574US8139387B2Method of erasing a memory device including complementary nonvolatile memory devicesPARK YOON-DONG·Filed 2010·Granted Mar 20, 2012·3 cites·10 claims
- 1674US7202521B2Silicon-oxide-nitride-oxide-silicon (SONOS) memory device and methods of manufacturing and operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Apr 10, 2007·19 cites·31 claims
- 1767US7943926B2Nonvolatile memory device and nonvolatile memory array including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 17, 2011·5 cites·9 claims
- 1866US7535049B2Multi bits flash memory device and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 19, 2009·3 cites·20 claims
- 1965US7626859B2Phase-change random access memory and programming methodSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Dec 1, 2009·5 cites·13 claims
- 2064US8125021B2Non-volatile memory devices including variable resistance materialCHO CHOONG-RAE·Filed 2007·Granted Feb 28, 2012·3 cites·5 claims
- 2163US8350262B2Nonvolatile memory device and nonvolatile memory array including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2011·Granted Jan 8, 2013·2 cites·12 claims
- 2260US8525142B2Non-volatile variable resistance memory device and method of fabricating the sameBOURIM EL MOSTAFA·Filed 2007·Granted Sep 3, 2013·3 cites·12 claims
- 2360US7719871B2Methods of operating and manufacturing logic device and semiconductor device including complementary nonvolatile memory device, and reading circuit for the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted May 18, 2010·1 cites·10 claims
- 2459US2007194367A1Storage node, nonvolatile memory device, methods of fabricating the same and method of operating the nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 2551US7859035B2Storage node having a metal-insulator-metal structure, non-volatile memory device including a storage node having a metal-insulator-metal structure and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 28, 2010·0 cites·15 claims
- 2648US8492076B2Method of manufacturing carbon nanotube device arrayKIM UN-JEONG·Filed 2009·Granted Jul 23, 2013·0 cites·16 claims
- 2748US2007138940A1Surface electron emission device and display device having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 2846US8455854B2Nonvolatile memory device including amorphous alloy metal oxide layer and method of manufacturing the sameCHO CHOONG-RAE·Filed 2007·Granted Jun 4, 2013·0 cites·10 claims
- 2940US8507030B2Method of fabricating metal oxide film on carbon nanotube and method of fabricating carbon nanotube transistor using the sameMIN YO-SEB·Filed 2008·Granted Aug 13, 2013·0 cites·12 claims
- 3040US2007018237A1Non-volatile memory device having fin-type channel region and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 3138US2005173766A1Semiconductor memory and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 3237US8796667B2Static random access memories having carbon nanotube thin filmsLEE EUN-HONG·Filed 2009·Granted Aug 5, 2014·0 cites·17 claims
- 3336US8796819B2Non-volatile memory device including a variable resistance materialLEE EUN-HONG·Filed 2007·Granted Aug 5, 2014·0 cites·13 claims
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