Inventor · disambiguated record
Tae-Hyeon Han
Also filed as: HAN TAE-HYEON
20 granted patents·533 citations·filing 1994–2001
96Inventor score
Top patents by PatentIndex Score
20 records- 0183US6124614ASi/SiGe MOSFET and method for fabricating the sameKOREA ELECTRONICS TELECOMM·Filed 1999·Granted Sep 26, 2000·47 cites·9 claims
- 0282US6337494B1Super self-aligned bipolar transistor and method for fabricating thereofKOREA ELECTRONICS TELECOMM·Filed 1998·Granted Jan 8, 2002·53 cites·8 claims
- 0381US5981345ASi/SiGe MOSFET and method for fabricating the sameKOREA ELECTRONICS TELECOMM·Filed 1997·Granted Nov 9, 1999·42 cites·12 claims
- 0479US6462397B2Bipolar junction deviceASB INC·Filed 2001·Granted Oct 8, 2002·21 cites·6 claims
- 0576US5897359AMethod of manufacturing a silicon/silicon germanium heterojunction bipolar transistorKOREA ELECTRONICS TELECOMM·Filed 1997·Granted Apr 27, 1999·41 cites·10 claims
- 0676US5668022ASilicon-silicon-germanium heterojunction bipolar transistor fabrication methodKOREA ELECTRONICS TELECOMM·Filed 1996·Granted Sep 16, 1997·40 cites·23 claims
- 0775US6362066B1Method for manufacturing bipolar devicesASB INC·Filed 1999·Granted Mar 26, 2002·40 cites·8 claims
- 0875US5798277AMethod for fabricating heterojunction bipolar transistorKOREA ELECTRONICS TELECOMM·Filed 1996·Granted Aug 25, 1998·39 cites·4 claims
- 0970US5962879ASuper self-aligned bipolar transistorKOREA ELECTRONICS TELECOMM·Filed 1997·Granted Oct 5, 1999·30 cites·8 claims
- 1069US5496745AMethod for making bipolar transistor having an enhanced trench isolationKOREA ELECTRONICS TELECOMM·Filed 1994·Granted Mar 5, 1996·43 cites·9 claims
- 1165US6190984B1Method for fabricating of super self-aligned bipolar transistorKOREA ELECTRONICS TELECOMM·Filed 1999·Granted Feb 20, 2001·24 cites·15 claims
- 1265US5696007AMethod for manufacturing a super self-aligned bipolar transistorKOREA ELECTRONICS TELECOMM·Filed 1996·Granted Dec 9, 1997·25 cites·8 claims
- 1363US5459084AMethod for fabricating hetero-junction bipolar transistor having reduced base parasitic resistanceKOREA ELECTRONICS TELECOMM·Filed 1994·Granted Oct 17, 1995·24 cites·13 claims
- 1461US5484737AMethod for fabricating bipolar transistorKOREA ELECTRONICS TELECOMM·Filed 1994·Granted Jan 16, 1996·23 cites·12 claims
- 1557US6552374B2Method of manufacturing bipolar device and structure thereofASB INC·Filed 2001·Granted Apr 22, 2003·8 cites·6 claims
- 1646US5696020AMethod for fabricating semiconductor device isolation region using a trench maskKOREA ELECTRONICS TELECOMM·Filed 1995·Granted Dec 9, 1997·14 cites·4 claims
- 1743US6562688B2Method of manufacturing a bipolar deviceASB INC·Filed 2000·Granted May 13, 2003·2 cites·5 claims
- 1843US5444014AMethod for fabricating semiconductor deviceKOREA ELECTRONICS TELECOMM·Filed 1994·Granted Aug 22, 1995·13 cites·5 claims
- 1932US5874347AMethod for fabricating field oxide isolation region for semiconductor devicesKOREA ELECTRONICS TELECOMM·Filed 1996·Granted Feb 23, 1999·3 cites·5 claims
- 2031US6140195AMethod for fabricating a lateral collector structure on a buried oxide layerKOREA ELECTRONICS TELECOMM·Filed 1998·Granted Oct 31, 2000·1 cites·4 claims
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