Inventor · disambiguated record
Tazrien Kamal
Also filed as: KAMAL TAZRIEN
42 granted patents·1,360 citations·filing 2000–2013
98Inventor score
Top patents by PatentIndex Score
42 records- 0196US7018868B1Disposable hard mask for memory bitline scalingADVANCED MICRO DEVICES INC·Filed 2004·Granted Mar 28, 2006·95 cites·19 claims
- 0296US6912163B2Memory device having high work function gate and method of erasing sameFASL LLC·Filed 2003·Granted Jun 28, 2005·168 cites·29 claims
- 0396US6436768B1Source drain implant during ONO formation for improved isolation of SONOS devicesADVANCED MICRO DEVICES INC·Filed 2001·Granted Aug 20, 2002·152 cites·22 claims
- 0494US6927145B1Bitline hard mask spacer flow for memory cell scalingADVANCED MICRO DEVICES INC·Filed 2004·Granted Aug 9, 2005·68 cites·17 claims
- 0594US6670241B1Semiconductor memory with deuterated materialsADVANCED MICRO DEVICES INC·Filed 2002·Granted Dec 30, 2003·79 cites·8 claims
- 0692US7033957B1ONO fabrication process for increasing oxygen content at bottom oxide-substrate interface in flash memory devicesFASL LLC·Filed 2003·Granted Apr 25, 2006·62 cites·21 claims
- 0791US6803275B1ONO fabrication process for reducing oxygen vacancy content in bottom oxide layer in flash memory devicesFASL LLC·Filed 2002·Granted Oct 12, 2004·46 cites·19 claims
- 0890US6949481B1Process for fabrication of spacer layer with reduced hydrogen content in semiconductor deviceFASL LLC·Filed 2003·Granted Sep 27, 2005·50 cites·20 claims
- 0990US6653190B1Flash memory with controlled wordline widthADVANCED MICRO DEVICES INC·Filed 2001·Granted Nov 25, 2003·44 cites·20 claims
- 1090US6617215B1Memory wordline hard maskADVANCED MICRO DEVICES INC·Filed 2002·Granted Sep 9, 2003·47 cites·20 claims
- 1189US6958511B1Flash memory device and method of fabrication thereof including a bottom oxide layer with two regions with different concentrations of nitrogenFASL LLC·Filed 2003·Granted Oct 25, 2005·52 cites·19 claims
- 1289US6653191B1Memory manufacturing process using bitline rapid thermal annealADVANCED MICRO DEVICES INC·Filed 2002·Granted Nov 25, 2003·40 cites·18 claims
- 1388US6885590B1Memory device having A P+ gate and thin bottom oxide and method of erasing sameADVANCED MICRO DEVICES INC·Filed 2003·Granted Apr 26, 2005·39 cites·9 claims
- 1488US6794764B1Charge-trapping memory arrays resistant to damage from contact hole informationADVANCED MICRO DEVICES INC·Filed 2003·Granted Sep 21, 2004·48 cites·20 claims
- 1586US6479348B1Method of making memory wordline hard mask extensionADVANCED MICRO DEVICES INC·Filed 2002·Granted Nov 12, 2002·31 cites·20 claims
- 1685US6969886B1ONO fabrication process for reducing oxygen vacancy content in bottom oxide layer in flash memory devicesFASL LLC·Filed 2004·Granted Nov 29, 2005·28 cites·20 claims
- 1785US6884681B1Method of manufacturing a semiconductor memory with deuterated materialsFASL LLC·Filed 2003·Granted Apr 26, 2005·31 cites·10 claims
- 1884US6774432B1UV-blocking layer for reducing UV-induced charging of SONOS dual-bit flash memory devices in BEOLADVANCED MICRO DEVICES INC·Filed 2003·Granted Aug 10, 2004·31 cites·20 claims
- 1983US6955965B1Process for fabrication of nitride layer with reduced hydrogen content in ONO structure in semiconductor deviceFASL LLC·Filed 2003·Granted Oct 18, 2005·26 cites·20 claims
- 2081US6765254B1Structure and method for preventing UV radiation damage and increasing data retention in memory cellsADVANCED MICRO DEVICES INC·Filed 2003·Granted Jul 20, 2004·30 cites·13 claims
- 2178US7163860B1Method of formation of gate stack spacer and charge storage materials having reduced hydrogen content in charge trapping dielectric flash memory deviceSPANSION LLC·Filed 2003·Granted Jan 16, 2007·25 cites·19 claims
- 2278US6962849B1Hard mask spacer for sublithographic bitlineADVANCED MICRO DEVICES INC·Filed 2003·Granted Nov 8, 2005·21 cites·31 claims
- 2377US6872609B1Narrow bitline using Safier for mirrorbitADVANCED MICRO DEVICES INC·Filed 2004·Granted Mar 29, 2005·20 cites·27 claims
- 2477US6855608B1Method of fabricating a planar structure charge trapping memory cell array with rectangular gates and reduced bit line resistanceADVANCED MICRO DEVICES INC·Filed 2003·Granted Feb 15, 2005·17 cites·24 claims
- 2570US7060554B2PECVD silicon-rich oxide layer for reduced UV chargingADVANCED MICRO DEVICES INC·Filed 2003·Granted Jun 13, 2006·12 cites·7 claims
- 2670US6627588B1Method of stripping photoresist using alcoholsGEORGIA TECH RES INST·Filed 2000·Granted Sep 30, 2003·13 cites·45 claims
- 2769US8445966B2Method and apparatus for protection against process-induced chargingROGERS DAVID M·Filed 2006·Granted May 21, 2013·4 cites·13 claims
- 2869US6803265B1Liner for semiconductor memories and manufacturing method thereforFASL LLC·Filed 2002·Granted Oct 12, 2004·15 cites·20 claims
- 2967US7811915B2Method for forming bit lines for semiconductor devicesSPANSION LLC·Filed 2008·Granted Oct 12, 2010·2 cites·16 claims
- 3067US7297592B1Semiconductor memory with data retention linerSPANSION LLC·Filed 2005·Granted Nov 20, 2007·2 cites·20 claims
- 3166US7176113B1LDC implant for mirrorbit to improve Vt roll-off and form sharper junctionSPANSION LLC·Filed 2004·Granted Feb 13, 2007·12 cites·25 claims
- 3266US6620717B1Memory with disposable ARC for wordline formationADVANCED MICRO DEVICES INC·Filed 2002·Granted Sep 16, 2003·10 cites·20 claims
- 3364US6706595B2Hard mask process for memory device without bitline shortsADVANCED MICRO DEVICES INC·Filed 2002·Granted Mar 16, 2004·9 cites·20 claims
- 3463US7018896B2UV-blocking layer for reducing UV-induced charging of SONOS dual-bit flash memory devices in BEOL processingADVANCED MICRO DEVICES INC·Filed 2004·Granted Mar 28, 2006·9 cites·20 claims
- 3558US6773988B1Memory wordline spacerADVANCED MICRO DEVICES INC·Filed 2002·Granted Aug 10, 2004·5 cites·14 claims
- 3652US9318373B2Method and apparatus for protection against process-induced chargingSPANSION LLC·Filed 2013·Granted Apr 19, 2016·0 cites·21 claims
- 3752US6995423B2Memory device having a P+ gate and thin bottom oxide and method of erasing sameADVANCED MICRO DEVICES INC·Filed 2004·Granted Feb 7, 2006·4 cites·19 claims
- 3852US6720133B1Memory manufacturing process using disposable ARC for wordline formationADVANCED MICRO DEVICES INC·Filed 2002·Granted Apr 13, 2004·10 cites·20 claims
- 3950US7023046B2Undoped oxide liner/BPSG for improved data retentionADVANCED MICRO DEVICES INC·Filed 2003·Granted Apr 4, 2006·3 cites·3 claims
- 4045US7972948B2Method for forming bit lines for semiconductor devicesSPANSION LLC·Filed 2010·Granted Jul 5, 2011·0 cites·20 claims
- 4140US7053446B1Memory wordline spacerADVANCED MICRO DEVICES INC·Filed 2004·Granted May 30, 2006·0 cites·10 claims
- 4226US8673716B2Memory manufacturing process with bitline isolationRAMSBEY MARK T·Filed 2002·Granted Mar 18, 2014·0 cites·14 claims
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