Inventor · disambiguated record
Hagop Nazarian
Also filed as: NAZARIAN HAGOP · NAZARIAN HAGOP A · NAZARIAN HAGOP ARTIN
166 granted patents·8 pending applications·2,140 citations·filing 1992–2024
99Inventor score
Files withCROSSBAR INC75MICRON TECHNOLOGY INC30CYPRESS SEMICONDUCTOR CORP15NAZARIAN HAGOP14SPANSION LLC12
Top patents by PatentIndex Score
174 records- 0199US10056907B1Field programmable gate array utilizing two-terminal non-volatile memoryCROSSBAR INC·Filed 2017·Granted Aug 21, 2018·69 cites·20 claims
- 0299US8659003B2Disturb-resistant non-volatile memory device and methodCROSSBAR INC·Filed 2013·Granted Feb 25, 2014·63 cites·3 claims
- 0399US7221592B2Multiple level programming in a non-volatile memory deviceMICRON TECHNOLOGY INC·Filed 2005·Granted May 22, 2007·103 cites·11 claims
- 0498US8320160B2NAND architecture having a resistive memory cell connected to a control gate of a field-effect transistorNAZARIAN HAGOP·Filed 2011·Granted Nov 27, 2012·84 cites·26 claims
- 0598US8274812B2Write and erase scheme for resistive memory deviceNAZARIAN HAGOP·Filed 2010·Granted Sep 25, 2012·60 cites·25 claims
- 0698US7345924B2Programming memory devicesMICRON TECHNOLOGY INC·Filed 2006·Granted Mar 18, 2008·59 cites·20 claims
- 0798US7269066B2Programming memory devicesMICRON TECHNOLOGY INC·Filed 2005·Granted Sep 11, 2007·59 cites·44 claims
- 0897US8675384B2Circuit for concurrent read operation and method thereforCROSSBAR INC·Filed 2012·Granted Mar 18, 2014·35 cites·28 claims
- 0997US8441835B2Interface control for improved switching in RRAMJO SUNG HYUN·Filed 2010·Granted May 14, 2013·52 cites·19 claims
- 1097US7457155B2Non-volatile memory device and method having bit-state assignments selected to minimize signal couplingMICRON TECHNOLOGY INC·Filed 2006·Granted Nov 25, 2008·40 cites·51 claims
- 1196US9727258B1Two-terminal memory compatibility with NAND flash memory set features type mechanismsCROSSBAR INC·Filed 2015·Granted Aug 8, 2017·22 cites·29 claims
- 1296US9570678B1Resistive RAM with preferental filament formation region and methodsCROSSBAR INC·Filed 2015·Granted Feb 14, 2017·16 cites·26 claims
- 1396US8315079B2Circuit for concurrent read operation and method thereforKUO HARRY·Filed 2010·Granted Nov 20, 2012·73 cites·20 claims
- 1496US6977842B2Boosted substrate/tub programming for flash memoriesMICRON TECHNOLOGY INC·Filed 2003·Granted Dec 20, 2005·95 cites·47 claims
- 1595US12080347B1Differential programming of two-terminal resistive switching memory with program soaking and adjacent path disablementCROSSBAR INC·Filed 2022·Granted Sep 3, 2024·3 cites·20 claims
- 1695US10134469B1Read operation with data latch and signal termination for 1TNR memory arrayCROSSBAR INC·Filed 2017·Granted Nov 20, 2018·16 cites·20 claims
- 1795US8619459B1High operating speed resistive random access memoryNGUYEN SANG·Filed 2012·Granted Dec 31, 2013·45 cites·19 claims
- 1895US8411485B2Non-volatile variable capacitive device including resistive memory cellNAZARIAN HAGOP·Filed 2010·Granted Apr 2, 2013·20 cites·20 claims
- 1995US7203092B2Flash memory array using adjacent bit line as sourceMICRON TECHNOLOGY INC·Filed 2005·Granted Apr 10, 2007·35 cites·28 claims
- 2094US9600410B1ReRAM based NAND like architecture with configurable page sizeCROSSBAR INC·Filed 2014·Granted Mar 21, 2017·22 cites·20 claims
- 2194US8934280B1Capacitive discharge programming for two-terminal memory cellsCROSSBAR INC·Filed 2013·Granted Jan 13, 2015·43 cites·20 claims
- 2294US8767441B2Switching device having a non-linear elementCROSSBAR INC·Filed 2013·Granted Jul 1, 2014·22 cites·20 claims
- 2394US8426306B1Three dimension programmable resistive random accessed memory array with shared bitline and methodGEE HARRY·Filed 2011·Granted Apr 23, 2013·20 cites·16 claims
- 2493US10453896B14F2 resistive non-volatile memory formed in a NAND architectureCROSSBAR INC·Filed 2017·Granted Oct 22, 2019·12 cites·20 claims
- 2593US9620206B2Memory array architecture with two-terminal memory cellsCROSSBAR INC·Filed 2015·Granted Apr 11, 2017·15 cites·19 claims
- 2693US8404553B2Disturb-resistant non-volatile memory device and methodHERNER SCOTT BRAD·Filed 2010·Granted Mar 26, 2013·11 cites·19 claims
- 2792US10489700B1Neuromorphic logic for an array of high on/off ratio non-volatile memory cellsCROSSBAR INC·Filed 2015·Granted Nov 26, 2019·14 cites·20 claims
- 2892US9685483B2Selector-based non-volatile cell fabrication utilizing IC-foundry compatible processCROSSBAR INC·Filed 2016·Granted Jun 20, 2017·13 cites·20 claims
- 2992US8723154B2Integration of an amorphous silicon resistive switching deviceJO SUNG HYUN·Filed 2010·Granted May 13, 2014·12 cites·43 claims
- 3092US8674724B2Field programmable gate array utilizing two-terminal non-volatile memoryNAZARIAN HAGOP·Filed 2011·Granted Mar 18, 2014·15 cites·20 claims
- 3191US12198760B2Differential programming of two-terminal memory with intrinsic error suppression and wordline couplingCROSSBAR INC·Filed 2022·Granted Jan 14, 2025·2 cites·20 claims
- 3291US11967376B2Distinct chip identifier sequence utilizing unclonable characteristics of resistive memory on a chipCROSSBAR INC·Filed 2022·Granted Apr 23, 2024·1 cites·19 claims
- 3391US9659646B1Programmable logic applications for an array of high on/off ratio and high speed non-volatile memory cellsCROSSBAR INC·Filed 2016·Granted May 23, 2017·10 cites·30 claims
- 3491US8754671B2Field programmable gate array utilizing two-terminal non-volatile memoryNAZARIAN HAGOP·Filed 2011·Granted Jun 17, 2014·13 cites·20 claims
- 3590US11790999B2Resistive random access memory erase techniques and apparatusCROSSBAR INC·Filed 2021·Granted Oct 17, 2023·2 cites·20 claims
- 3690US9659642B1State change detection for two-terminal memory during application of a state-changing stimulusCROSSBAR INC·Filed 2015·Granted May 23, 2017·11 cites·20 claims
- 3790US7567457B2Nonvolatile memory array architectureSPANSION LLC·Filed 2007·Granted Jul 28, 2009·23 cites·19 claims
- 3890US7248498B2Serial transistor-cell array architectureMICRON TECHNOLOGY INC·Filed 2006·Granted Jul 24, 2007·19 cites·21 claims
- 3990US7061306B2Voltage boosterMICRON TECHNOLOGY INC·Filed 2005·Granted Jun 13, 2006·22 cites·64 claims
- 4090US5621338AHigh speed configuration independent programmable macrocellCYPRESS SEMICONDUCTOR CORP·Filed 1996·Granted Apr 15, 1997·63 cites·19 claims
- 4189US9324942B1Resistive memory cell with solid state diodeCROSSBAR INC·Filed 2013·Granted Apr 26, 2016·7 cites·20 claims
- 4289US9191000B2Field programmable gate array utilizing two-terminal non-volatile memoryCROSSBAR INC·Filed 2014·Granted Nov 17, 2015·7 cites·20 claims
- 4389US7499329B2Flash memory array using adjacent bit line as sourceMICRON TECHNOLOGY INC·Filed 2007·Granted Mar 3, 2009·17 cites·17 claims
- 4488US10096362B1Switching block configuration bit comprising a non-volatile memory cellCROSSBAR INC·Filed 2017·Granted Oct 9, 2018·7 cites·20 claims
- 4588US7505323B2Programming memory devicesMICRON TECHNOLOGY INC·Filed 2008·Granted Mar 17, 2009·12 cites·23 claims
- 4688US7425742B2NAND flash cell structureMICRON TECHNOLOGY INC·Filed 2006·Granted Sep 16, 2008·16 cites·21 claims
- 4788US7149124B2Boosted substrate/tub programming for flash memoriesMICRON TECHNOLOGY INC·Filed 2004·Granted Dec 12, 2006·39 cites·53 claims
- 4888US6552519B1Variable impedance network for an integrated circuitWINBOND ELECTRONICS CORP·Filed 2001·Granted Apr 22, 2003·35 cites·20 claims
- 4987US10541025B2Switching block configuration bit comprising a non-volatile memory cellCROSSBAR INC·Filed 2018·Granted Jan 21, 2020·6 cites·20 claims
- 5087US5740106AApparatus and method for nonvolatile configuration circuitCYPRESS SEMICONDUCTOR CORP·Filed 1997·Granted Apr 14, 1998·67 cites·38 claims
Showing the top 50 of 174 patent records by PatentIndex Score.
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