Inventor · disambiguated record
Tatsuo Nakayama
Also filed as: NAKAYAMA TATSUO
77 granted patents·14 pending applications·1,121 citations·filing 1988–2023
99Inventor score
Top patents by PatentIndex Score
91 records- 0196US9837524B2Semiconductor device and method of manufacturing semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2016·Granted Dec 5, 2017·14 cites·9 claims
- 0296US6492669B2Semiconductor device with schottky electrode having high schottky barrierNEC CORP·Filed 2001·Granted Dec 10, 2002·134 cites·20 claims
- 0395US7859014B2Semiconductor deviceNEC CORP·Filed 2005·Granted Dec 28, 2010·46 cites·18 claims
- 0495US7800131B2Field effect transistorNEC CORP·Filed 2006·Granted Sep 21, 2010·48 cites·17 claims
- 0595US6465814B2Semiconductor deviceNEC CORP·Filed 2001·Granted Oct 15, 2002·104 cites·24 claims
- 0694US9559183B2Semiconductor device with varying thickness of insulating film between electrode and gate electrode and method of manufacturing semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2014·Granted Jan 31, 2017·14 cites·12 claims
- 0794US8674407B2Semiconductor device using a group III nitride-based semiconductorANDO YUJI·Filed 2009·Granted Mar 18, 2014·37 cites·12 claims
- 0894US7863648B2Field effect transistorNEC CORP·Filed 2006·Granted Jan 4, 2011·38 cites·15 claims
- 0994US5557994ARatchet handle with torque adjustmentFiled 1995·Granted Sep 24, 1996·68 cites·13 claims
- 1093US9508842B2Semiconductor device and method of manufacturing semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2015·Granted Nov 29, 2016·9 cites·15 claims
- 1193US9306027B2Semiconductor device and a method for manufacturing a semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2014·Granted Apr 5, 2016·13 cites·7 claims
- 1293US8853666B2Field effect transistor, and multilayered epitaxial film for use in preparation of field effect transistorINOUE TAKASHI·Filed 2006·Granted Oct 7, 2014·26 cites·21 claims
- 1392US9306051B2Semiconductor device using a nitride semiconductorRENESAS ELECTRONICS CORP·Filed 2015·Granted Apr 5, 2016·9 cites·20 claims
- 1491US6552373B2Hetero-junction field effect transistor having an intermediate layerNEC CORP·Filed 2001·Granted Apr 22, 2003·65 cites·20 claims
- 1590US10050142B2Semiconductor device and a method for manufacturing a semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2017·Granted Aug 14, 2018·5 cites·12 claims
- 1690US8928038B2Field effect transistor containing a group III nitride semiconductor as main componentOKAMOTO YASUHIRO·Filed 2012·Granted Jan 6, 2015·9 cites·7 claims
- 1790US6765241B2Group III nitride semiconductor device of field effect transistor type having reduced parasitic capacitancesNEC CORP·Filed 2001·Granted Jul 20, 2004·54 cites·10 claims
- 1889US7052790B2Fuel cell system and operation method having a condensed water tank open to atmosphereMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted May 30, 2006·35 cites·20 claims
- 1989US6441391B1Semiconductor device having drain and gate electrodes formed to lie along few degrees of direction in relation to the substrateNEC CORP·Filed 2001·Granted Aug 27, 2002·52 cites·3 claims
- 2088US9520489B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2015·Granted Dec 13, 2016·6 cites·14 claims
- 2187US9722062B2Semiconductor device and a method for manufacturing a semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2015·Granted Aug 1, 2017·4 cites·14 claims
- 2287US9368609B2Semiconductor device including a trench with a corner having plural tapered portionsRENESAS ELECTRONICS CORP·Filed 2014·Granted Jun 14, 2016·7 cites·6 claims
- 2387US8921894B2Field effect transistor, method for producing the same, and electronic deviceANDO YUJI·Filed 2010·Granted Dec 30, 2014·10 cites·22 claims
- 2485US9984884B2Method of manufacturing semiconductor device with a multi-layered gate dielectricRENESAS ELECTRONICS CORP·Filed 2016·Granted May 29, 2018·3 cites·3 claims
- 2585US8716755B2Semiconductor device and method for manufacturing the sameINOUE TAKASHI·Filed 2012·Granted May 6, 2014·5 cites·10 claims
- 2684US5057566AThermoplastic rubber compositionsNIPPON ZEON CO·Filed 1988·Granted Oct 15, 1991·33 cites·18 claims
- 2783US9954087B2Field effect transistor, and multilayered epitaxial film for use in preparation of field effect transistorRENESAS ELECTRONICS CORP·Filed 2014·Granted Apr 24, 2018·5 cites·6 claims
- 2883US7973335B2Field-effect transistor having group III nitride electrode structureNEC CORP·Filed 2003·Granted Jul 5, 2011·33 cites·12 claims
- 2982US10199476B2Semiconductor device and manufacturing method of semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2017·Granted Feb 5, 2019·3 cites·9 claims
- 3082US9601609B2Semiconductor deviceRenesas Electronics Electronics·Filed 2014·Granted Mar 21, 2017·6 cites·6 claims
- 3182US8426895B2Semiconductor device and manufacturing method of the sameOKAMOTO YASUHIRO·Filed 2009·Granted Apr 23, 2013·9 cites·10 claims
- 3280US10109730B2Semiconductor device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2016·Granted Oct 23, 2018·2 cites·5 claims
- 3380US8963207B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2014·Granted Feb 24, 2015·4 cites·20 claims
- 3480US8659055B2Semiconductor device, field-effect transistor, and electronic deviceOKAMOTO YASUHIRO·Filed 2010·Granted Feb 25, 2014·6 cites·11 claims
- 3579US10014403B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2017·Granted Jul 3, 2018·2 cites·11 claims
- 3679US8198652B2Field effect transistor with reduced gate leakage currentANDO YUJI·Filed 2007·Granted Jun 12, 2012·7 cites·9 claims
- 3779US7985984B2III-nitride semiconductor field effect transistorNEC CORP·Filed 2008·Granted Jul 26, 2011·7 cites·9 claims
- 3879US7256432B2Field-effect transistorNEC CORP·Filed 2003·Granted Aug 14, 2007·25 cites·20 claims
- 3979US5847409ASemiconductor device with superlattice-structured graded buffer layer and fabrication method thereofNEC CORP·Filed 1996·Granted Dec 8, 1998·44 cites·7 claims
- 4075US8643025B2Semiconductor device and method of manufacturing sameNAKAYAMA TATSUO·Filed 2012·Granted Feb 4, 2014·5 cites·18 claims
- 4174US10388779B2Semiconductor device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2018·Granted Aug 20, 2019·1 cites·16 claims
- 4273US9978642B2III-V nitride semiconductor device having reduced contact resistanceRENESAS ELECTRONICS CORP·Filed 2016·Granted May 22, 2018·2 cites·14 claims
- 4373US9231096B2Semiconductor device and field effect transistor with controllable threshold voltageRENESAS ELECTRONICS CORP·Filed 2014·Granted Jan 5, 2016·2 cites·7 claims
- 4473US8344422B2Semiconductor deviceNEC CORP·Filed 2008·Granted Jan 1, 2013·5 cites·8 claims
- 4573US6440822B1Method of manufacturing semiconductor device with sidewall metal layersNEC CORP·Filed 2001·Granted Aug 27, 2002·19 cites·15 claims
- 4671US10084077B2Semiconductor device and method of manufacturing semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2017·Granted Sep 25, 2018·1 cites·13 claims
- 4770US9502551B2Nitride semiconductor transistor deviceRENESAS ELECTRONICS CORP·Filed 2015·Granted Nov 22, 2016·1 cites·14 claims
- 4869US10243070B2Semiconductor device and method for manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2017·Granted Mar 26, 2019·1 cites·17 claims
- 4968US9123739B2Semiconductor device and manufacturing method of semiconductor deviceOKAMOTO YASUHIRO·Filed 2012·Granted Sep 1, 2015·1 cites·20 claims
- 5067US9660045B2Semiconductor device and a method for manufacturing a semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2016·Granted May 23, 2017·1 cites·15 claims
Showing the top 50 of 91 patent records by PatentIndex Score.
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