Inventor · disambiguated record
Kenji Yasumura
Also filed as: YASUMURA KENJI
7 granted patents·238 citations·filing 1995–1999
87Inventor score
Files withMITSUBISHI ELECTRIC CORP7
Top patents by PatentIndex Score
7 records- 0194US5895954AField effect transistor with impurity concentration peak under gate electrodeMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Apr 20, 1999·143 cites·8 claims
- 0272US6081662ASemiconductor device including trench isolation structure and a method of manufacturing thereofMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Jun 27, 2000·44 cites·9 claims
- 0355US5623154ASemiconductor device having triple diffusionMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Apr 22, 1997·22 cites·7 claims
- 0448US6033971ASemiconductor device having an element isolating oxide film and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Mar 7, 2000·13 cites·9 claims
- 0544US5831323ASemiconductor device having an element isolating oxide film and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Nov 3, 1998·11 cites·5 claims
- 0634US6342418B1Semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Jan 29, 2002·3 cites·4 claims
- 0732US5880507ASemiconductor device with improved pn junction breakdown voltageMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Mar 9, 1999·2 cites·9 claims
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