Inventor · disambiguated record
Kenji Maeguchi
Also filed as: MAEGUCHI KENJI
8 granted patents·257 citations·filing 1980–1989
89Inventor score
Top patents by PatentIndex Score
8 records- 0189US4463492AMethod of forming a semiconductor device on insulating substrate by selective amorphosization followed by simultaneous activation and reconversion to single crystal stateTOKYO SHIBAURA ELECTRIC CO·Filed 1982·Granted Aug 7, 1984·85 cites·13 claims
- 0288US4395726ASemiconductor device of silicon on sapphire structure having FETs with different thickness polycrystalline silicon filmsTOKYO SHIBAURA ELECTRIC CO·Filed 1980·Granted Jul 26, 1983·49 cites·2 claims
- 0372US4619037AMethod of manufacturing a semiconductor deviceTOSHIBA KK·Filed 1985·Granted Oct 28, 1986·49 cites·3 claims
- 0456US4447823ASOS p--n Junction device with a thick oxide wiring insulation layerTOKYO SHIBAURA ELECTRIC CO·Filed 1981·Granted May 8, 1984·20 cites·13 claims
- 0551US4498224AMethod of manufacturing a MOSFET using accelerated ions to form an amorphous regionTOKYO SHIBAURA ELECTRIC CO·Filed 1982·Granted Feb 12, 1985·17 cites·8 claims
- 0650US4564583AMethod for manufacturing a semiconductor deviceTOKYO SHIBAURA ELECTRIC CO·Filed 1984·Granted Jan 14, 1986·16 cites·15 claims
- 0747US4491856ASemiconductor device having contacting but electrically isolated semiconductor region and interconnection layer of differing conductivity typesTOKYO SHIBAURA ELECTRIC CO·Filed 1984·Granted Jan 1, 1985·12 cites·11 claims
- 0839US5061983ASemiconductor device having a metal silicide layer connecting two semiconductorsTOKYO SHIBAURA ELECTRIC CO·Filed 1989·Granted Oct 29, 1991·9 cites·1 claims
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