Inventor · disambiguated record
Sylvain Leomant
Also filed as: LEOMANT SYLVAIN · LÉOMANT SYLVAIN
22 granted patents·5 pending applications·65 citations·filing 2009–2025
93Inventor score
Files withINFINEON TECHNOLOGIES AUSTRIA AG24ATMEL CORP1INFINEON TECHNOLOGIES AG1INFINEON TECHNOLOGIES AUSTRIA1
Top patents by PatentIndex Score
27 records- 0195US10510836B1Gate trench device with oxygen inserted si-layersINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Dec 17, 2019·13 cites·20 claims
- 0294US10573742B1Oxygen inserted Si-layers in vertical trench power devicesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Feb 25, 2020·11 cites·24 claims
- 0391US10580888B1Oxygen inserted Si-layers for reduced contact implant outdiffusion in vertical power devicesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Mar 3, 2020·7 cites·22 claims
- 0490US11031466B2Method of forming oxygen inserted Si-layers in power semiconductor devicesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Jun 8, 2021·2 cites·20 claims
- 0589US10741638B2Oxygen inserted Si-layers for reduced substrate dopant outdiffusion in power devicesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Aug 11, 2020·4 cites·13 claims
- 0688US11581369B2Semiconductor switch element and method of manufacturing the sameINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Feb 14, 2023·2 cites·15 claims
- 0786US10861966B2Vertical trench power devices with oxygen inserted Si-layersINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Dec 8, 2020·3 cites·20 claims
- 0882US9502401B2Integrated circuit with first and second switching devices, half bridge circuit and method of manufacturingINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2013·Granted Nov 22, 2016·4 cites·15 claims
- 0980US8004924B2Voltage regulator for memoryATMEL CORP·Filed 2009·Granted Aug 23, 2011·16 cites·20 claims
- 1072US9171738B2Systems and methods for integrating bootstrap circuit elements in power transistors and other devicesINFINEON TECHNOLOGIES AUSTRIA·Filed 2012·Granted Oct 27, 2015·2 cites·20 claims
- 1171US12159933B2Semiconductor device with semiconductor mesas between adjacent gate trenchesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2023·Granted Dec 3, 2024·0 cites·20 claims
- 1270US11682704B2Method of producing a semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Granted Jun 20, 2023·0 cites·20 claims
- 1370US10418452B2Semiconductor device with different gate trenchesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Sep 17, 2019·1 cites·19 claims
- 1464US11545545B2Superjunction device with oxygen inserted Si-layersINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Jan 3, 2023·0 cites·20 claims
- 1562US11777026B2Power semiconductor device having low-k dielectric gaps between adjacent metal contactsINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Granted Oct 3, 2023·0 cites·17 claims
- 1662US10868172B2Vertical power devices with oxygen inserted Si-layersINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Dec 15, 2020·0 cites·23 claims
- 1761US11316020B2Semiconductor device and methodINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Apr 26, 2022·0 cites·8 claims
- 1859US11031479B2Semiconductor device with different gate trenchesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Jun 8, 2021·0 cites·20 claims
- 1957US2025096121A1Transistor device with reduced on-resistanceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2024·Application pending·0 cites
- 2056US10790353B2Semiconductor device with superjunction and oxygen inserted Si-layersINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Sep 29, 2020·0 cites·11 claims
- 2155US2025357213A1Method for forming a semiconductor dieINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2025·Application pending·0 cites
- 2253US2023097353A1Wafer, electronic component and method using lined and closed separation trenchINFINEON TECHNOLOGIES AG·Filed 2022·Application pending·0 cites
- 2352US9530773B2Systems and methods for integrating bootstrap circuit elements in power transistors and other devicesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Dec 27, 2016·0 cites·19 claims
- 2451US2025324710A1Semiconductor Device and Method of Manufacturing the SameINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2025·Application pending·0 cites
- 2550US11908904B2Planar gate semiconductor device with oxygen-doped Si-layersINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Granted Feb 20, 2024·0 cites·22 claims
- 2649US2017047324A1Method of Manufacturing an Integrated CircuitINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Application pending·0 cites
- 2748US9941354B2Semiconductor device comprising a first gate trench and a second gate trenchINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Apr 10, 2018·0 cites·20 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →