Inventor · disambiguated record
Erin C. Young
Also filed as: YOUNG ERIN C
10 granted patents·3 pending applications·28 citations·filing 2010–2024
84Inventor score
Top patents by PatentIndex Score
13 records- 0191US10985285B2Methods for fabricating III-nitride tunnel junction devicesUNIV CALIFORNIA·Filed 2017·Granted Apr 20, 2021·9 cites·20 claims
- 0288US8481991B2Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocationsOHTA HIROAKI·Filed 2010·Granted Jul 9, 2013·8 cites·27 claims
- 0386US11532922B2III-nitride surface-emitting laser and method of fabricationUNIV CALIFORNIA·Filed 2018·Granted Dec 20, 2022·5 cites·21 claims
- 0475US11348908B2Contact architectures for tunnel junction devicesUNIV CALIFORNIA·Filed 2017·Granted May 31, 2022·2 cites·19 claims
- 0572US11411137B2III-nitride light emitting diodes with tunnel junctions wafer bonded to a conductive oxide and having optically pumped layersUNIV CALIFORNIA·Filed 2017·Granted Aug 9, 2022·2 cites·14 claims
- 0668US9159553B2Semipolar or nonpolar nitride-based devices on partially or fully relaxed alloys with misfit dislocations at the heterointerfaceOHTA HIROAKI·Filed 2010·Granted Oct 13, 2015·2 cites·21 claims
- 0762US2022181513A1Hybrid growth method for iii-nitride tunnel junction devicesUNIV CALIFORNIA·Filed 2021·Application pending·0 cites
- 0860US2024250211A1Regrowth Structures for Micro LEDAPPLE INC·Filed 2024·Application pending·0 cites
- 0957US8866126B2Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocationsUNIV CALIFORNIA·Filed 2013·Granted Oct 21, 2014·0 cites·22 claims
- 1056US2014376584A1Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocationsUNIV CALIFORNIA·Filed 2014·Application pending·0 cites
- 1152US11164997B2III-nitride tunnel junction light emitting diode with wall plug efficiency of over seventy percentUNIV CALIFORNIA·Filed 2017·Granted Nov 2, 2021·0 cites·15 claims
- 1251US11217722B2Hybrid growth method for III-nitride tunnel junction devicesUNIV CALIFORNIA·Filed 2016·Granted Jan 4, 2022·0 cites·20 claims
- 1342US10685835B2III-nitride tunnel junction with modified P-N interfaceUNIV CALIFORNIA·Filed 2016·Granted Jun 16, 2020·0 cites·19 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →