Inventor · disambiguated record
Yeoncheol Heo
Also filed as: Heo YeonCheol
13 granted patents·1 pending application·14 citations·filing 2017–2024
87Inventor score
Top patents by PatentIndex Score
14 records- 0195US11843051B2Field effect transistor including multiple aspect trapping ratio structuresSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Dec 12, 2023·2 cites·19 claims
- 0283US10181526B2Field effect transistor including multiple aspect ratio trapping structuresCANTORO MIRCO·Filed 2017·Granted Jan 15, 2019·3 cites·18 claims
- 0376US10319715B2Semiconductor devices including separate doped regionsSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jun 11, 2019·2 cites·19 claims
- 0475US10297687B2Semiconductor device including vertical-type field effect transistors and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted May 21, 2019·2 cites·16 claims
- 0574US10211339B2Vertical transistor having a semiconductor pillar penetrating a silicide formed on the substrate surfaceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Feb 19, 2019·2 cites·19 claims
- 0672US10692858B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jun 23, 2020·1 cites·15 claims
- 0771US9953883B2Semiconductor device including a field effect transistor and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Apr 24, 2018·1 cites·5 claims
- 0869US11411111B2Field effect transistor including multiple aspect trapping ratio structuresSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 9, 2022·0 cites·15 claims
- 0968US9966377B2Semiconductor devices including fin-shaped active patterns in different conductivity type regionsSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted May 8, 2018·1 cites·20 claims
- 1062US10714397B2Semiconductor device including an active pattern having a lower pattern and a pair of channel patterns disposed thereon and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jul 14, 2020·0 cites·11 claims
- 1161US10734521B2Field effect transistor including multiple aspect trapping ratio structuresSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Aug 4, 2020·0 cites·7 claims
- 1258US10453756B2Method for manufacturing a semiconductor device including a pair of channel semiconductor patternsSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Oct 22, 2019·0 cites·9 claims
- 1354US2025194233A1Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1453US10950724B2Method of fabricating a semiconductor device including vertical-type field effect transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Mar 16, 2021·0 cites·18 claims
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