Inventor · disambiguated record
Uihui Kwon
Also filed as: KWON UIHUI
14 granted patents·9 pending applications·25 citations·filing 2014–2025
87Inventor score
Top patents by PatentIndex Score
23 records- 0193US9634092B2Semiconductor devices having tapered active regionsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Apr 25, 2017·12 cites·19 claims
- 0288US11658194B2Image sensors having grating structures therein that provide enhanced diffraction of incident lightSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted May 23, 2023·3 cites·20 claims
- 0382US11888039B2Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jan 30, 2024·1 cites·20 claims
- 0478US11222918B1Image sensorSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jan 11, 2022·1 cites·20 claims
- 0577US10796068B2Standard cell design system, standard cell design optimization method thereof, and semiconductor design systemSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Oct 6, 2020·4 cites·17 claims
- 0676US12261208B2Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Mar 25, 2025·0 cites·20 claims
- 0775US11693386B2Method and electronic device for guiding semiconductor manufacturing processSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jul 4, 2023·1 cites·19 claims
- 0872US2025194217A1Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 0971US9130040B2FinFET semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Sep 8, 2015·3 cites·20 claims
- 1070US2025098224A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1170US2023246050A1Image sensors having grating structures therein that provide enhanced diffraction of incident lightSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1261US11791394B2Metal oxide semiconductor field-effect transistor (MOSFET) devices and manufacturing methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 17, 2023·0 cites·20 claims
- 1359US12191368B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jan 7, 2025·0 cites·20 claims
- 1457US11522064B2Metal oxide semiconductor field-effect transistor (MOSFET) devices and manufacturing methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Dec 6, 2022·0 cites·20 claims
- 1556US2024170520A1Image sensor and manufacturing method thereofSAMSUNG ELECTRONICSCO LTD·Filed 2023·Application pending·0 cites
- 1653US2019294748A1Simulation system estimating self-heating characteristic of circuit and design method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2019·Application pending·0 cites
- 1753US2019130059A1Simulation system estimating self-heating characteristic of circuit and design method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2018·Application pending·0 cites
- 1852US2023282662A1Image sensorSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 1951US2023352509A1Image sensorSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 2043US12002890B2Semiconductor protection deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jun 4, 2024·0 cites·20 claims
- 2143US11972185B2Method and apparatus for estimating aging of integrated circuitSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Apr 30, 2024·0 cites·20 claims
- 2241US10216876B2Simulation system estimating self-heating characteristic of circuit and design method thereofJEON JONGWOOK·Filed 2015·Granted Feb 26, 2019·0 cites·13 claims
- 2332US2016086841A1Method for forming pattern of semiconductor device and semiconductor device formed using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →