Inventor · disambiguated record
Sun-Pil Youn
Also filed as: YOUN SUN-PIL
35 granted patents·11 pending applications·380 citations·filing 2002–2014
97Inventor score
Top patents by PatentIndex Score
46 records- 0197US8901749B2Semiconductor packages and electronic systems including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Dec 2, 2014·29 cites·23 claims
- 0297US8604615B2Semiconductor device including a stack of semiconductor chips, underfill material and molding materialLEE CHUNG-SUN·Filed 2011·Granted Dec 10, 2013·75 cites·42 claims
- 0396US9343432B2Semiconductor chip stack having improved encapsulationSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted May 17, 2016·23 cites·20 claims
- 0494US7704788B2Methods of fabricating multi-bit phase-change memory devices and devices formed therebySAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Apr 27, 2010·68 cites·21 claims
- 0589US7629677B2Semiconductor package with inner leads exposed from an encapsulantSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 8, 2009·26 cites·29 claims
- 0686US8796861B2Semiconductor package having support memberKIM HYUN-JIN·Filed 2012·Granted Aug 5, 2014·8 cites·20 claims
- 0786US7084061B2Methods of fabricating a semiconductor device having MOS transistor with strained channelSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 1, 2006·36 cites·27 claims
- 0885US7696552B2Semiconductor devices including high-k dielectric materialsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 13, 2010·12 cites·7 claims
- 0982US7521316B2Methods of forming gate structures for semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 21, 2009·8 cites·46 claims
- 1081US8809888B2Light emitting element with improved light extraction efficiency, light emitting device comprising the same, and fabricating method of the light emitting element and the light emitting deviceSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Aug 19, 2014·4 cites·18 claims
- 1181US8643175B2Multi-channel package and electronic system including the sameKIM KIL-SOO·Filed 2012·Granted Feb 4, 2014·7 cites·19 claims
- 1281US7544597B2Method of forming a semiconductor device including an ohmic layerSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 9, 2009·3 cites·20 claims
- 1378US7875939B2Semiconductor device including an ohmic layerSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jan 25, 2011·2 cites·6 claims
- 1478US7371669B2Method of forming a gate of a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 13, 2008·7 cites·22 claims
- 1577US8178424B2Method of fabricating light-emitting apparatus with improved light extraction efficiency and light-emitting apparatus fabricated using the methodKIM YU-SIK·Filed 2009·Granted May 15, 2012·5 cites·15 claims
- 1676US7465617B2Method of fabricating a semiconductor device having a silicon oxide layer, a method of fabricating a semiconductor device having dual spacers, a method of forming a silicon oxide layer on a substrate, and a method of forming dual spacers on a conductive material layerSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 16, 2008·4 cites·19 claims
- 1775US8319238B2Light emitting device with improved light extraction efficiencyLEE SEUNG-JAE·Filed 2010·Granted Nov 27, 2012·4 cites·9 claims
- 1875US7544996B2Methods of fabricating a semiconductor device having a metal gate patternSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 9, 2009·4 cites·4 claims
- 1975US7109104B2Methods of fabricating a semiconductor device having a metal gate patternSAMSUNG ELECTRONICS LTD CO·Filed 2003·Granted Sep 19, 2006·15 cites·22 claims
- 2074US9184156B2Semiconductor packages and electronic systems including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Nov 10, 2015·2 cites·20 claims
- 2172US8415181B2Light emitting element with improved light extraction efficiency, light emitting device comprising the same, and fabricating method of the light emitting element and the light emitting deviceKIM YU-SIK·Filed 2012·Granted Apr 9, 2013·2 cites·11 claims
- 2269US8034701B2Methods of forming recessed gate electrodes having covered layer interfacesSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Oct 11, 2011·3 cites·13 claims
- 2369US7772637B2Semiconductor devices including gate structures and leakage barrier oxidesSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Aug 10, 2010·3 cites·15 claims
- 2468US7582931B2Recessed gate electrodes having covered layer interfaces and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 1, 2009·3 cites·5 claims
- 2566US7306996B2Methods of fabricating a semiconductor device having a metal gate patternSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 11, 2007·2 cites·21 claims
- 2663US7777272B2Non-volatile memory device and semiconductor package including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 17, 2010·3 cites·21 claims
- 2762US6797559B2Method of fabricating semiconductor device having metal conducting layerSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Sep 28, 2004·10 cites·20 claims
- 2861US8110843B2Light emitting element with improved light extraction efficiency, light emitting device comprising the same, and fabricating method of the light emitting element and the light emitting deviceKIM YU-SIK·Filed 2009·Granted Feb 7, 2012·1 cites·20 claims
- 2961US7232756B2Nickel salicide process with reduced dopant deactivationSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jun 19, 2007·9 cites·38 claims
- 3055US9269877B2Method of fabricating light-emitting apparatus with improved light extraction efficiency and light-emitting apparatus fabricated using the methodSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Feb 23, 2016·0 cites·21 claims
- 3155US7772643B2Methods of fabricating semiconductor device having a metal gate patternSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Aug 10, 2010·0 cites·20 claims
- 3253US8637881B2Method of fabricating light-emitting apparatus with improved light extraction efficiency and light-emitting apparatus fabricated using the methodKIM YU-SIK·Filed 2012·Granted Jan 28, 2014·0 cites·5 claims
- 3351US7005367B2Method of fabricating a semiconductor device having a silicon oxide layer, a method of fabricating a semiconductor device having dual spacers, a method of forming a silicon oxide layer on a substrate, and a method of forming dual spacers on a conductive material layerSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 28, 2006·2 cites·69 claims
- 3443US2006163677A1Methods of forming a semiconductor device having a metal gate electrode and associated devicesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 3542US2006115967A1Methods of manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 3641US2008073772A1Stacked semiconductor package and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 3740US2013299771A1Semiconductor Device Including TransistorSAMSUNG ELECTRONICS CO LTD·Filed 2013·Application pending·0 cites
- 3840US2006186491A1Methods of forming semiconductor devices having metal gate electrodes and related devicesPARK HEE-SOOK·Filed 2006·Application pending·0 cites
- 3939US2006068535A1Methods of fabricating semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 4039US2006051921A1Methods of manufacturing semiconductor device gate structures by performing a surface treatment on a gate oxide layerSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 4138US7098123B2Methods of forming a semiconductor device having a metal gate electrode and associated devicesSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 29, 2006·0 cites·24 claims
- 4238US2005282338A1Methods of forming gate patterns using isotropic etching of gate insulating layersYOO JONG-RYEOL·Filed 2005·Application pending·0 cites
- 4338US2011161583A1Memory card and memory system including semiconductor chips in stacked structureYOUN SUN-PIL·Filed 2010·Application pending·0 cites
- 4437US6864132B2Methods of fabricating integrated circuit gates by pretreating prior to oxidizingSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Mar 8, 2005·0 cites·18 claims
- 4537US2005266665A1Methods of manufacturing semiconductor devices with gate structures having an oxide layer on the sidewalls thereof and related processing apparatusYOUN SUN-PIL·Filed 2005·Application pending·0 cites
- 4635US2006079075A1Gate structures with silicide sidewall barriers and methods of manufacturing the sameLEE CHANG-WON·Filed 2005·Application pending·0 cites
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