Inventor · disambiguated record
Li-Te Lin
Also filed as: LIN LI · LIN LI-TE · LIN LI-TE S
134 granted patents·41 pending applications·847 citations·filing 2000–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD144TAIWAN SEMICONDUCTOR MFG24WANGSU SCIENCE & TECH CO LTD2GIGA BYTE TECH CO LTD1LIN LI-TE S1
Top patents by PatentIndex Score
175 records- 0198US6743732B1Organic low K dielectric etch with NH3 chemistryTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Jun 1, 2004·249 cites·7 claims
- 0297US11469143B2Semiconductor device with elongated patternTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 11, 2022·4 cites·20 claims
- 0396US11942372B2Dielectric protection layer in middle-of-line interconnect structure manufacturing methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 26, 2024·4 cites·20 claims
- 0495US11769822B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 26, 2023·2 cites·20 claims
- 0595US7494884B2SiGe selective growth without a hard maskTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Feb 24, 2009·36 cites·20 claims
- 0694US11626506B2Reducing pattern loading in the etch-back of metal gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 11, 2023·2 cites·20 claims
- 0794US9627258B1Method of forming a contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 18, 2017·9 cites·20 claims
- 0894US6407002B1Partial resist free approach in contact etch to improve W-fillingTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Jun 18, 2002·83 cites·27 claims
- 0993US11791161B2Pattern fidelity enhancementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 17, 2023·2 cites·20 claims
- 1093US10164067B2Method of fabricating a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·6 cites·20 claims
- 1193US7838887B2Source/drain carbon implant and RTA anneal, pre-SiGe depositionTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Nov 23, 2010·26 cites·10 claims
- 1292US10998421B2Reducing pattern loading in the etch-back of metal gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 4, 2021·5 cites·19 claims
- 1392US10861698B2Pattern fidelity enhancementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 8, 2020·5 cites·19 claims
- 1492US10790195B2Elongated pattern and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 29, 2020·5 cites·20 claims
- 1592US8404546B2Source/drain carbon implant and RTA anneal, pre-SiGe depositionWOON WEI-YEN·Filed 2010·Granted Mar 26, 2013·35 cites·16 claims
- 1692US6720256B1Method of dual damascene patterningTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Apr 13, 2004·78 cites·43 claims
- 1791US11776850B2Semiconductor device with reduced loading effectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 3, 2023·1 cites·20 claims
- 1891US11107907B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 31, 2021·4 cites·20 claims
- 1991US11094556B2Method of manufacturing semiconductor devices using directional processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 17, 2021·4 cites·20 claims
- 2091US7816217B2Multi-step epitaxial process for depositing Si/SiGeTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Oct 19, 2010·17 cites·21 claims
- 2190US11855192B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·2 cites·20 claims
- 2290US6376366B1Partial hard mask open process for hard mask dual damascene etchTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Apr 23, 2002·49 cites·18 claims
- 2389US12310043B2Method of fabricating a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 20, 2025·1 cites·20 claims
- 2489US12033863B2Semiconductor fabrication system embedded with effective baking moduleTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 9, 2024·1 cites·20 claims
- 2589US2025331214A1Semiconductor device structure with inner spacer layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2688US11646234B2Method for FinFET fabrication and structure thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 9, 2023·1 cites·20 claims
- 2788US10957779B2Gate etch back with reduced loading effectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Mar 23, 2021·3 cites·20 claims
- 2887US12396205B2Semiconductor device having fins and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 19, 2025·0 cites·20 claims
- 2987US12389619B2Semiconductor device structure with inner spacer layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 12, 2025·0 cites·20 claims
- 3087US12021125B2High selectivity etching with germanium-containing gasesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 25, 2024·1 cites·20 claims
- 3187US2025308892A1Pattern fidelity enhancementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3286US2025294791A1Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3385US12334342B2Pattern fidelity enhancementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 17, 2025·0 cites·20 claims
- 3485US12261085B2Semiconductor device with reduced loading effectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 25, 2025·0 cites·20 claims
- 3585US11264281B2Semiconductor device with reduced loading effectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 1, 2022·1 cites·20 claims
- 3685US10157751B1Method for manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 18, 2018·3 cites·20 claims
- 3785US7109085B2Etching process to avoid polysilicon notchingTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Sep 19, 2006·10 cites·27 claims
- 3885US2025366005A1Method for manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3984US12356646B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 8, 2025·0 cites·20 claims
- 4084US12230507B2Method of manufacturing semiconductor devices using directional processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 18, 2025·0 cites·20 claims
- 4183US11973129B2Semiconductor device structure with inner spacer layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 30, 2024·0 cites·20 claims
- 4283US11145749B2Method of fabricating a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 12, 2021·2 cites·20 claims
- 4383US10950434B2Methods of reducing gate spacer loss during semiconductor manufacturingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 16, 2021·2 cites·6 claims
- 4483US10707081B2Fine line patterning methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 7, 2020·2 cites·18 claims
- 4582US12224210B2Method for FinFet fabrication and structure thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 11, 2025·0 cites·20 claims
- 4682US12125897B2Air spacers in transistors and methods forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 22, 2024·0 cites·20 claims
- 4782US7390753B2In-situ plasma treatment of advanced resists in fine pattern definitionTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jun 24, 2008·9 cites·20 claims
- 4882US2024274471A1Semiconductor device with elongated patternTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4981US12027625B2Semiconductor device having fins and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 2, 2024·0 cites·20 claims
- 5081US11978672B2Semiconductor device with elongated patternTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 7, 2024·0 cites·20 claims
Showing the top 50 of 175 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →