Inventor · disambiguated record
Hitoshi Habuka
Also filed as: HABUKA HITOSHI
27 granted patents·2 pending applications·1,274 citations·filing 1990–2017
97Inventor score
Files withSHINETSU HANDOTAI KK24NAT INST ADVANCED IND SCIENCE & TECH1NAT UNIV CORP YOKOHAMA NAT UNIV1SHIN ESTU HANDOTAI CO LTD1SHIN ETSU HANDOTAI LTD1
Top patents by PatentIndex Score
29 records- 0197US6569239B2Silicon epitaxial wafer and production method thereforSHINETSU HANDOTAI KK·Filed 2001·Granted May 27, 2003·550 cites·8 claims
- 0297US6245647B1Method for fabrication of thin filmSHINETSU HANDOTAI KK·Filed 1999·Granted Jun 12, 2001·287 cites·10 claims
- 0393US5749974AMethod of chemical vapor deposition and reactor thereforSHINETSU HANDOTAI KK·Filed 1995·Granted May 12, 1998·101 cites·4 claims
- 0486US5672204AApparatus for vapor-phase epitaxial growthSHINETSU HANDOTAI KK·Filed 1996·Granted Sep 30, 1997·54 cites·7 claims
- 0585US6008128AMethod for smoothing surface of silicon single crystal substrateSHINETSU HANDOTAI KK·Filed 1998·Granted Dec 28, 1999·74 cites·3 claims
- 0670US5755878AMethod for vapor phase growthSHINETSU HANDOTAI KK·Filed 1995·Granted May 26, 1998·30 cites·3 claims
- 0768US5913974AHeat treating method of a semiconductor single crystal substrateSHINETSU HANDOTAI KK·Filed 1997·Granted Jun 22, 1999·33 cites·7 claims
- 0868US5743956AMethod of producing single crystal thin filmSHINETSU HANDOTAI KK·Filed 1996·Granted Apr 28, 1998·21 cites·20 claims
- 0966US9777375B2Converging mirror furnaceNAT INST ADVANCED IND SCIENCE & TECH·Filed 2012·Granted Oct 3, 2017·2 cites·25 claims
- 1057US6235645B1Process for cleaning silicon semiconductor substratesSHINETSU HANDOTAI KK·Filed 1998·Granted May 22, 2001·20 cites·14 claims
- 1157US5938840AMethod for vapor phase growthSHINETSU HANDOTAI KK·Filed 1998·Granted Aug 17, 1999·17 cites·1 claims
- 1255US6254933B1Method of chemical vapor depositionSHIN ETSU HANDOTAI LTD·Filed 1999·Granted Jul 3, 2001·11 cites·10 claims
- 1343US6072164AHeat-treating method and radiant heating deviceSHIN ESTU HANDOTAI CO LTD·Filed 1997·Granted Jun 6, 2000·12 cites·11 claims
- 1443US5993557AApparatus for growing single-crystalline semiconductor filmSHINETSU HANDOTAI KK·Filed 1998·Granted Nov 30, 1999·10 cites·1 claims
- 1542US6309458B1Method for fabricating silicon thin filmSHINETSU HANDOTAI KK·Filed 1999·Granted Oct 30, 2001·8 cites·10 claims
- 1642US5868833AMethod of producing silicon single crystal thin filmSHINETSU HANDOTAI KK·Filed 1997·Granted Feb 9, 1999·6 cites·5 claims
- 1740US5718762AMethod for vapor-phase growthSHINETSU HANDOTAI KK·Filed 1996·Granted Feb 17, 1998·5 cites·15 claims
- 1838US5858881AMethod of producing thin filmSHINETSU HANDOTAI KK·Filed 1996·Granted Jan 12, 1999·6 cites·6 claims
- 1936US5846321AMethod of producing single crystal thin filmSHINETSU HANDOTAI KK·Filed 1996·Granted Dec 8, 1998·6 cites·6 claims
- 2036US5057442AProcess for preparing light-emitting diodes using a maximum layer thickness equationSHINETSU HANDOTAI KK·Filed 1990·Granted Oct 15, 1991·5 cites·1 claims
- 2135US6238478B1Silicon single crystal and process for producing single-crystal silicon thin filmSHINETSU HANDOTAI KK·Filed 1997·Granted May 29, 2001·4 cites·9 claims
- 2235US5885346ASilicon semiconductor crystal and a method for manufacturing itSHINETSU HANDOTAI KK·Filed 1998·Granted Mar 23, 1999·4 cites·15 claims
- 2334US6124209AMethod for treating a surface of a silicon single crystal and a method for manufacturing a silicon single crystal thin filmSHINETSU HANDOTAI KK·Filed 1997·Granted Sep 26, 2000·3 cites·4 claims
- 2434US2021285100A1Method for cleaning semiconductor production chamberNAT UNIV CORP YOKOHAMA NAT UNIV·Filed 2017·Application pending·0 cites
- 2533US5849078AMethod for growing single-crystalline semiconductor film and apparatus used thereforSHINETSU HANDOTAI KK·Filed 1997·Granted Dec 15, 1998·4 cites·4 claims
- 2630US6194691B1Heating furnace and manufacturing method thereforSHINETSU HANDOTAI KK·Filed 1999·Granted Feb 27, 2001·0 cites·4 claims
- 2730US6048793AMethod and apparatus for thin film growthSHINETSU HANDOTAI KK·Filed 1995·Granted Apr 11, 2000·1 cites·18 claims
- 2828US2001001384A1Silicon epitaxial wafer and production method thereforFiled 1999·Application pending·0 cites
- 2927US5685905AMethod of manufacturing a single crystal thin filmSHINETSU HANDOTAI KK·Filed 1996·Granted Nov 11, 1997·0 cites·3 claims
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