Inventor · disambiguated record
Roland Madar
Also filed as: MADAR ROLAND
9 granted patents·291 citations·filing 1985–2003
90Inventor score
Files withCENTRE NAT RECH SCIENT4CALIFORNIA INST OF TECHN1ETAT FRANCAIS CENTRE NATIONAL1LAUE MAX INST1SANDIA CORP1
Top patents by PatentIndex Score
9 records- 0187US7208392B1Creation of an electrically conducting bonding between two semi-conductor elementsSOITEC SILICON ON INSULATOR·Filed 2000·Granted Apr 24, 2007·45 cites·9 claims
- 0283US5916634AChemical vapor deposition of W-Si-N and W-B-NSANDIA CORP·Filed 1996·Granted Jun 29, 1999·81 cites·12 claims
- 0377US6238739B1Non-plasma CVD method and apparatus of forming Ti1-xA1xN coatingsCENTRE NAT RECH SCIENT·Filed 1997·Granted May 29, 2001·53 cites·5 claims
- 0474US5945162AMethod and device for introducing precursors into chamber for chemical vapor depositionCENTRE NAT RECH SCIENT·Filed 1994·Granted Aug 31, 1999·46 cites·11 claims
- 0562US5997949ASynthesis of W-Si-N films by chemical vapor deposition using WF6, SiH4 and NH3CALIFORNIA INST OF TECHN·Filed 1996·Granted Dec 7, 1999·25 cites·15 claims
- 0657US4663066AMagnetic rare earth/iron/boron and rare earth/cobalt/boron hydrides, the process for their manufacture of the corresponding pulverulent dehydrogenated productsCENTRE NAT RECH SCIENT·Filed 1985·Granted May 5, 1987·23 cites·8 claims
- 0743US7655091B2Formation of single-crystal silicon carbideCENTRE NAT RECH SCIENT·Filed 2003·Granted Feb 2, 2010·2 cites·6 claims
- 0841US5281299AMethod for manufacturing a crystal with a lattice parameter gradientLAUE MAX INST·Filed 1992·Granted Jan 25, 1994·10 cites·6 claims
- 0932US4871691ASelective deposition process of a refractory metal silicide onto silicon areasETAT FRANCAIS CENTRE NATIONAL·Filed 1988·Granted Oct 3, 1989·6 cites·8 claims
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