P

Inventor

HATTENDORF MICHAEL L

US87 patents
⚠️ This page may combine multiple inventors who share the name “HATTENDORF MICHAEL L”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INTEL CORP

49 patents
US10121882B1Nov 6, 2018

Gate line plug structures for advanced integrated circuit structure fabrication

INTEL CORP56 citations99
US10121875B1Nov 6, 2018

Replacement gate structures for advanced integrated circuit structure fabrication

INTEL CORP61 citations98
US7402872B2Jul 22, 2008

Method for forming an integrated circuit

INTEL CORP141 citations98
US7195985B2Mar 27, 2007

CMOS transistor junction regions formed by a CVD etching and deposition sequence

INTEL CORP98 citations97
US10304940B1May 28, 2019

Gate cut and fin trim isolation for advanced integrated circuit structure fabrication

INTEL CORP13 citations96
US10615265B2Apr 7, 2020

Gate cut and fin trim isolation for advanced integrated circuit structure fabrication

INTEL CORP8 citations93
US9882027B2Jan 30, 2018

Confined epitaxial regions for semiconductor devices and methods of fabricating semiconductor devices having confined epitaxial regions

INTEL CORP12 citations93
US11031487B2Jun 8, 2021

Contact over active gate structures for advanced integrated circuit structure fabrication

INTEL CORP7 citations92
US10886383B2Jan 5, 2021

Replacement gate structures for advanced integrated circuit structure fabrication

INTEL CORP4 citations92
US10741669B2Aug 11, 2020

Differentiated voltage threshold metal gate structures for advanced integrated circuit structure fabrication

INTEL CORP10 citations92
US10541316B2Jan 21, 2020

Contact over active gate structures for advanced integrated circuit structure fabrication

INTEL CORP9 citations92
US10460993B2Oct 29, 2019

Fin cut and fin trim isolation for advanced integrated circuit structure fabrication

INTEL CORP6 citations92
US7678631B2Mar 16, 2010

Formation of strain-inducing films

INTEL CORP22 citations92
US7595248B2Sep 29, 2009

Angled implantation for removal of thin film layers

INTEL CORP28 citations92
US7479432B2Jan 20, 2009

CMOS transistor junction regions formed by a CVD etching and deposition sequence

INTEL CORP31 citations92
US11664439B2May 30, 2023

Trench contact structures for advanced integrated circuit structure fabrication

INTEL CORP2 citations84
US11088261B2Aug 10, 2021

Trench contact structures for advanced integrated circuit structure fabrication

INTEL CORP3 citations84
US11063133B2Jul 13, 2021

Fin cut and fin trim isolation for advanced integrated circuit structure fabrication

INTEL CORP1 citations84
US11011616B2May 18, 2021

Gate line plug structures for advanced integrated circuit structure fabrication

INTEL CORP1 citations84
US10957782B2Mar 23, 2021

Trench contact structures for advanced integrated circuit structure fabrication

INTEL CORP2 citations84
US10777656B2Sep 15, 2020

Fin cut and fin trim isolation for advanced integrated circuit structure fabrication

INTEL CORP3 citations84
US10756204B2Aug 25, 2020

Fin trim isolation with single gate spacing for advanced integrated circuit structure fabrication

INTEL CORP6 citations84
US10461177B2Oct 29, 2019

Confined epitaxial regions for semiconductor devices and methods of fabricating semiconductor devices having confined epitaxial regions

INTEL CORP4 citations84
US9633835B2Apr 25, 2017

Transistor fabrication technique including sacrificial protective layer for source/drain at contact location

INTEL CORP7 citations84
US10930753B2Feb 23, 2021

Trench isolation for advanced integrated circuit structure fabrication

INTEL CORP1 citations83
US10854732B2Dec 1, 2020

Dual metal gate structures for advanced integrated circuit structure fabrication

INTEL CORP1 citations83
US10840151B2Nov 17, 2020

Dual metal silicide structures for advanced integrated circuit structure fabrication

INTEL CORP5 citations83
US10790378B2Sep 29, 2020

Replacement gate structures for advanced integrated circuit structure fabrication

INTEL CORP3 citations83
US10727313B2Jul 28, 2020

Dual metal gate structures for advanced integrated circuit structure fabrication

INTEL CORP3 citations83
US10707133B2Jul 7, 2020

Trench plug hardmask for advanced integrated circuit structure fabrication

INTEL CORP5 citations83
US9418898B2Aug 16, 2016

Integrated circuits with selective gate electrode recess

INTEL CORP4 citations83
US11881520B2Jan 23, 2024

Fin patterning for advanced integrated circuit structure fabrication

INTEL CORP2 citations82
US10818774B2Oct 27, 2020

Plugs for interconnect lines for advanced integrated circuit structure fabrication

INTEL CORP1 citations82
US10734379B2Aug 4, 2020

Fin end plug structures for advanced integrated circuit structure fabrication

INTEL CORP9 citations82
US11581420B2Feb 14, 2023

Contact over active gate structures for advanced integrated circuit structure fabrication

INTEL CORP2 citations81
US12255247B2Mar 18, 2025

Trench contact structures for advanced integrated circuit structure fabrication

INTEL CORP0 citations73
US12199167B2Jan 14, 2025

Gate line plug structures for advanced integrated circuit structure fabrication

INTEL CORP0 citations73
US11948997B2Apr 2, 2024

Trench contact structures for advanced integrated circuit structure fabrication

INTEL CORP0 citations73
US11646359B2May 9, 2023

Fin cut and fin trim isolation for advanced integrated circuit structure fabrication

INTEL CORP0 citations73
US11640988B2May 2, 2023

Confined epitaxial regions for semiconductor devices and methods of fabricating semiconductor devices having confined epitaxial regions

INTEL CORP2 citations73
US11322601B2May 3, 2022

Gate cut and fin trim isolation for advanced integrated circuit structure fabrication

INTEL CORP1 citations73
US11127841B2Sep 21, 2021

Confined epitaxial regions for semiconductor devices and methods of fabricating semiconductor devices having confined epitaxial regions

INTEL CORP3 citations73
US7812394B2Oct 12, 2010

CMOS transistor junction regions formed by a CVD etching and deposition sequence

INTEL CORP5 citations73
US7479431B2Jan 20, 2009

Strained NMOS transistor featuring deep carbon doped regions and raised donor doped source and drain

INTEL CORP6 citations73
US11955532B2Apr 9, 2024

Dual metal gate structure having portions of metal gate layers in contact with a gate dielectric

INTEL CORP0 citations72
US11887838B2Jan 30, 2024

Trench plug hardmask for advanced integrated circuit structure fabrication

INTEL CORP2 citations72
US11640985B2May 2, 2023

Trench isolation for advanced integrated circuit structure fabrication

INTEL CORP0 citations72
US11508626B2Nov 22, 2022

Dual metal silicide structures for advanced integrated circuit structure fabrication

INTEL CORP3 citations72
US11482611B2Oct 25, 2022

Replacement gate structures for advanced integrated circuit structure fabrication

INTEL CORP0 citations72

MUKHERJEE SRIJIT

1 patent

Showing the top 50 of 87 patents by PatentIndex Score.