Inventor
HATTENDORF MICHAEL L
US87 patents
⚠️ This page may combine multiple inventors who share the name “HATTENDORF MICHAEL L”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INTEL CORP
49 patentsUS10121882B1Nov 6, 2018
Gate line plug structures for advanced integrated circuit structure fabrication
INTEL CORP56 citations99
US10121875B1Nov 6, 2018
Replacement gate structures for advanced integrated circuit structure fabrication
INTEL CORP61 citations98
US7402872B2Jul 22, 2008
Method for forming an integrated circuit
INTEL CORP141 citations98
US7195985B2Mar 27, 2007
CMOS transistor junction regions formed by a CVD etching and deposition sequence
INTEL CORP98 citations97
US10304940B1May 28, 2019
Gate cut and fin trim isolation for advanced integrated circuit structure fabrication
INTEL CORP13 citations96
US10615265B2Apr 7, 2020
Gate cut and fin trim isolation for advanced integrated circuit structure fabrication
INTEL CORP8 citations93
US9882027B2Jan 30, 2018
Confined epitaxial regions for semiconductor devices and methods of fabricating semiconductor devices having confined epitaxial regions
INTEL CORP12 citations93
US11031487B2Jun 8, 2021
Contact over active gate structures for advanced integrated circuit structure fabrication
INTEL CORP7 citations92
US10886383B2Jan 5, 2021
Replacement gate structures for advanced integrated circuit structure fabrication
INTEL CORP4 citations92
US10741669B2Aug 11, 2020
Differentiated voltage threshold metal gate structures for advanced integrated circuit structure fabrication
INTEL CORP10 citations92
US10541316B2Jan 21, 2020
Contact over active gate structures for advanced integrated circuit structure fabrication
INTEL CORP9 citations92
US10460993B2Oct 29, 2019
Fin cut and fin trim isolation for advanced integrated circuit structure fabrication
INTEL CORP6 citations92
US7678631B2Mar 16, 2010
Formation of strain-inducing films
INTEL CORP22 citations92
US7595248B2Sep 29, 2009
Angled implantation for removal of thin film layers
INTEL CORP28 citations92
US7479432B2Jan 20, 2009
CMOS transistor junction regions formed by a CVD etching and deposition sequence
INTEL CORP31 citations92
US11664439B2May 30, 2023
Trench contact structures for advanced integrated circuit structure fabrication
INTEL CORP2 citations84
US11088261B2Aug 10, 2021
Trench contact structures for advanced integrated circuit structure fabrication
INTEL CORP3 citations84
US11063133B2Jul 13, 2021
Fin cut and fin trim isolation for advanced integrated circuit structure fabrication
INTEL CORP1 citations84
US11011616B2May 18, 2021
Gate line plug structures for advanced integrated circuit structure fabrication
INTEL CORP1 citations84
US10957782B2Mar 23, 2021
Trench contact structures for advanced integrated circuit structure fabrication
INTEL CORP2 citations84
US10777656B2Sep 15, 2020
Fin cut and fin trim isolation for advanced integrated circuit structure fabrication
INTEL CORP3 citations84
US10756204B2Aug 25, 2020
Fin trim isolation with single gate spacing for advanced integrated circuit structure fabrication
INTEL CORP6 citations84
US10461177B2Oct 29, 2019
Confined epitaxial regions for semiconductor devices and methods of fabricating semiconductor devices having confined epitaxial regions
INTEL CORP4 citations84
US9633835B2Apr 25, 2017
Transistor fabrication technique including sacrificial protective layer for source/drain at contact location
INTEL CORP7 citations84
US10930753B2Feb 23, 2021
Trench isolation for advanced integrated circuit structure fabrication
INTEL CORP1 citations83
US10854732B2Dec 1, 2020
Dual metal gate structures for advanced integrated circuit structure fabrication
INTEL CORP1 citations83
US10840151B2Nov 17, 2020
Dual metal silicide structures for advanced integrated circuit structure fabrication
INTEL CORP5 citations83
US10790378B2Sep 29, 2020
Replacement gate structures for advanced integrated circuit structure fabrication
INTEL CORP3 citations83
US10727313B2Jul 28, 2020
Dual metal gate structures for advanced integrated circuit structure fabrication
INTEL CORP3 citations83
US10707133B2Jul 7, 2020
Trench plug hardmask for advanced integrated circuit structure fabrication
INTEL CORP5 citations83
US9418898B2Aug 16, 2016
Integrated circuits with selective gate electrode recess
INTEL CORP4 citations83
US11881520B2Jan 23, 2024
Fin patterning for advanced integrated circuit structure fabrication
INTEL CORP2 citations82
US10818774B2Oct 27, 2020
Plugs for interconnect lines for advanced integrated circuit structure fabrication
INTEL CORP1 citations82
US10734379B2Aug 4, 2020
Fin end plug structures for advanced integrated circuit structure fabrication
INTEL CORP9 citations82
US11581420B2Feb 14, 2023
Contact over active gate structures for advanced integrated circuit structure fabrication
INTEL CORP2 citations81
US12255247B2Mar 18, 2025
Trench contact structures for advanced integrated circuit structure fabrication
INTEL CORP0 citations73
US12199167B2Jan 14, 2025
Gate line plug structures for advanced integrated circuit structure fabrication
INTEL CORP0 citations73
US11948997B2Apr 2, 2024
Trench contact structures for advanced integrated circuit structure fabrication
INTEL CORP0 citations73
US11646359B2May 9, 2023
Fin cut and fin trim isolation for advanced integrated circuit structure fabrication
INTEL CORP0 citations73
US11640988B2May 2, 2023
Confined epitaxial regions for semiconductor devices and methods of fabricating semiconductor devices having confined epitaxial regions
INTEL CORP2 citations73
US11322601B2May 3, 2022
Gate cut and fin trim isolation for advanced integrated circuit structure fabrication
INTEL CORP1 citations73
US11127841B2Sep 21, 2021
Confined epitaxial regions for semiconductor devices and methods of fabricating semiconductor devices having confined epitaxial regions
INTEL CORP3 citations73
US7812394B2Oct 12, 2010
CMOS transistor junction regions formed by a CVD etching and deposition sequence
INTEL CORP5 citations73
US7479431B2Jan 20, 2009
Strained NMOS transistor featuring deep carbon doped regions and raised donor doped source and drain
INTEL CORP6 citations73
US11955532B2Apr 9, 2024
Dual metal gate structure having portions of metal gate layers in contact with a gate dielectric
INTEL CORP0 citations72
US11887838B2Jan 30, 2024
Trench plug hardmask for advanced integrated circuit structure fabrication
INTEL CORP2 citations72
US11640985B2May 2, 2023
Trench isolation for advanced integrated circuit structure fabrication
INTEL CORP0 citations72
US11508626B2Nov 22, 2022
Dual metal silicide structures for advanced integrated circuit structure fabrication
INTEL CORP3 citations72
US11482611B2Oct 25, 2022
Replacement gate structures for advanced integrated circuit structure fabrication
INTEL CORP0 citations72
MUKHERJEE SRIJIT
1 patentShowing the top 50 of 87 patents by PatentIndex Score.