Inventor · disambiguated record
Andrew N. Westmeyer
Also filed as: WESTMEYER ANDREW · WESTMEYER ANDREW N
11 granted patents·473 citations·filing 2004–2010
92Inventor score
Top patents by PatentIndex Score
11 records- 0198US7402872B2Method for forming an integrated circuitINTEL CORP·Filed 2006·Granted Jul 22, 2008·141 cites·15 claims
- 0298US7332439B2Metal gate transistors with epitaxial source and drain regionsINTEL CORP·Filed 2004·Granted Feb 19, 2008·144 cites·14 claims
- 0397US7195985B2CMOS transistor junction regions formed by a CVD etching and deposition sequenceINTEL CORP·Filed 2005·Granted Mar 27, 2007·98 cites·14 claims
- 0495US7479432B2CMOS transistor junction regions formed by a CVD etching and deposition sequenceINTEL CORP·Filed 2006·Granted Jan 20, 2009·31 cites·9 claims
- 0591US7427775B2Fabricating strained channel epitaxial source/drain transistorsINTEL CORP·Filed 2007·Granted Sep 23, 2008·17 cites·5 claims
- 0684US7226842B2Fabricating strained channel epitaxial source/drain transistorsINTEL CORP·Filed 2004·Granted Jun 5, 2007·27 cites·13 claims
- 0780US7812394B2CMOS transistor junction regions formed by a CVD etching and deposition sequenceINTEL CORP·Filed 2008·Granted Oct 12, 2010·5 cites·13 claims
- 0876US8344452B2Metal gate transistors with raised source and drain regions formed on heavily doped substrateINTEL CORP·Filed 2008·Granted Jan 1, 2013·4 cites·8 claims
- 0963US7479431B2Strained NMOS transistor featuring deep carbon doped regions and raised donor doped source and drainINTEL CORP·Filed 2004·Granted Jan 20, 2009·6 cites·18 claims
- 1058US7858981B2Strained NMOS transistor featuring deep carbon doped regions and raised donor doped source and drainINTEL CORP·Filed 2009·Granted Dec 28, 2010·0 cites·26 claims
- 1145US8426858B2Strained NMOS transistor featuring deep carbon doped regions and raised donor doped source and drainHATTENDORF MICHAEL L·Filed 2010·Granted Apr 23, 2013·0 cites·20 claims
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