Inventor · disambiguated record
Won-Tien Tsang
Also filed as: TSANG WON T · TSANG WON-TIEN
47 granted patents·1 pending application·984 citations·filing 1975–2004
99Inventor score
Files withAT & T BELL LAB18BELL TELEPHONE LABOR INC12AMERICAN TELEPHONE & TELEGRAPH8LUCENT TECHNOLOGIES INC4AT & T CORP2
Top patents by PatentIndex Score
48 records- 0194US4780748AField-effect transistor having a delta-doped ohmic contactAMERICAN TELEPHONE & TELEGRAPH·Filed 1986·Granted Oct 25, 1988·140 cites·4 claims
- 0292US4512022ASemiconductor laser having graded index waveguideAT & T BELL LAB·Filed 1982·Granted Apr 16, 1985·40 cites·10 claims
- 0382US5208824AArticle comprising a DFB semiconductor laserAT & T BELL LAB·Filed 1991·Granted May 4, 1993·44 cites·8 claims
- 0482US4435809APassively mode locked laser having a saturable absorberBELL TELEPHONE LABOR INC·Filed 1981·Granted Mar 6, 1984·27 cites·9 claims
- 0581US4291327AMOS DevicesBELL TELEPHONE LABOR INC·Filed 1980·Granted Sep 22, 1981·47 cites·4 claims
- 0680US5548607AArticle comprising an integrated laser/modulator combinationLUCENT TECHNOLOGIES INC·Filed 1994·Granted Aug 20, 1996·39 cites·8 claims
- 0780US4438446ADouble barrier double heterostructure laserBELL TELEPHONE LABOR INC·Filed 1981·Granted Mar 20, 1984·23 cites·11 claims
- 0879US4476477AGraded bandgap multilayer avalanche photodetector with energy step backsAT & T BELL LAB·Filed 1982·Granted Oct 9, 1984·38 cites·18 claims
- 0978US4099305AFabrication of mesa devices by MBE growth over channeled substratesBELL TELEPHONE LABOR INC·Filed 1977·Granted Jul 11, 1978·31 cites·11 claims
- 1075US6597718B2Electroabsorption-modulated fabry perot laserMULTIPLEX INC·Filed 2001·Granted Jul 22, 2003·14 cites·17 claims
- 1174US4622673AHeteroepitaxial ridge overgrown laserAT & T BELL LAB·Filed 1984·Granted Nov 11, 1986·17 cites·12 claims
- 1274US4216036ASelf-terminating thermal oxidation of Al-containing group III-V compound layersBELL TELEPHONE LABOR INC·Filed 1978·Granted Aug 5, 1980·27 cites·13 claims
- 1372US4737960ARare earth doped semiconductor laserAMERICAN TELEPHONE & TELEGRAPH·Filed 1986·Granted Apr 12, 1988·18 cites·10 claims
- 1472US4622671AMulticavity optical deviceAT & T BELL LAB·Filed 1983·Granted Nov 11, 1986·17 cites·32 claims
- 1572US4602370ALarge optical cavity laser having a plurality of active layersAT & T BELL LAB·Filed 1983·Granted Jul 22, 1986·17 cites·10 claims
- 1672US4575919AMethod of making heteroepitaxial ridge overgrown laserAT & T BELL LAB·Filed 1984·Granted Mar 18, 1986·25 cites·13 claims
- 1771US4269635AStrip buried heterostructure laserBELL TELEPHONE LABOR INC·Filed 1979·Granted May 26, 1981·18 cites·9 claims
- 1870US4734380AMulticavity optical device held together by metallic filmAMERICAN TELEPHONE & TELEGRAPH·Filed 1986·Granted Mar 29, 1988·17 cites·1 claims
- 1970US4236122AMesa devices fabricated on channeled substratesBELL TELEPHONE LABOR INC·Filed 1978·Granted Nov 25, 1980·24 cites·4 claims
- 2068US4564946AOptical communications system using frequency shift keyingAT & T BELL LAB·Filed 1983·Granted Jan 14, 1986·15 cites·6 claims
- 2166US4831628ADenices fabricated using method of selective area epitaxial growth using ion beamsAMERICAN TELEPHONE & TELEGRAPH·Filed 1986·Granted May 16, 1989·21 cites·8 claims
- 2265US4772934ADelta-doped ohmic metal to semiconductor contactsAMERICAN TELEPHONE & TELEGRAPH·Filed 1986·Granted Sep 20, 1988·30 cites·6 claims
- 2362US4694318ASawtooth photodetectorAMERICAN TELEPHONE & TELEGRAPH·Filed 1984·Granted Sep 15, 1987·18 cites·11 claims
- 2462US4636268AChemical beam deposition method utilizing alkyl compounds in a carrier gasAT & T BELL LAB·Filed 1984·Granted Jan 13, 1987·22 cites·11 claims
- 2559US4599632APhotodetector with graded bandgap regionAT & T BELL LAB·Filed 1982·Granted Jul 8, 1986·17 cites·10 claims
- 2659US4282541APlanar P-I-N photodetectorsBELL TELEPHONE LABOR INC·Filed 1979·Granted Aug 4, 1981·16 cites·7 claims
- 2759US4194933AMethod for fabricating junction lasers having lateral current confinementBELL TELEPHONE LABOR INC·Filed 1979·Granted Mar 25, 1980·16 cites·9 claims
- 2858US4190813AStrip buried heterostructure laserBELL TELEPHONE LABOR INC·Filed 1977·Granted Feb 26, 1980·16 cites·21 claims
- 2958US4169997ALateral current confinement in junction lasersBELL TELEPHONE LABOR INC·Filed 1977·Granted Oct 2, 1979·16 cites·9 claims
- 3057US7031612B2Optical transponders and transceiversMULTIPLEX INC·Filed 2001·Granted Apr 18, 2006·5 cites·11 claims
- 3156US6108362ABroadband tunable semiconductor laser sourceLUCENT TECHNOLOGIES INC·Filed 1997·Granted Aug 22, 2000·21 cites·8 claims
- 3256US5224113ASemiconductor laser having reduced temperature dependenceAT & T BELL LAB·Filed 1991·Granted Jun 29, 1993·15 cites·8 claims
- 3353US4464342AMolecular beam epitaxy apparatus for handling phosphorusAT & T BELL LAB·Filed 1982·Granted Aug 7, 1984·8 cites·6 claims
- 3450US5440575AArticle comprising a semiconductor laser with stble facet coatingAT & T CORP·Filed 1994·Granted Aug 8, 1995·19 cites·7 claims
- 3550US4785454AStabilized cleaved-coupled cavity laserAMERICAN TELEPHONE & TELEGRAPH·Filed 1983·Granted Nov 15, 1988·8 cites·18 claims
- 3649US5346581AMethod of making a compound semiconductor deviceAT & T BELL LAB·Filed 1993·Granted Sep 13, 1994·18 cites·10 claims
- 3749US4622093AMethod of selective area epitaxial growth using ion beamsAT & T BELL LAB·Filed 1986·Granted Nov 11, 1986·11 cites·9 claims
- 3849US4464211AMethod for selective area growth by liquid phase epitaxyAT & T BELL LAB·Filed 1982·Granted Aug 7, 1984·14 cites·7 claims
- 3946US4264916ASemiconductor barrier Josephson junctionBELL TELEPHONE LABOR INC·Filed 1979·Granted Apr 28, 1981·8 cites·6 claims
- 4044US4627065ADouble active layer semiconductor laserAT & T BELL LAB·Filed 1983·Granted Dec 2, 1986·6 cites·13 claims
- 4143US5606573AMethod and apparatus for control of lasing wavelength in distributed feedback lasersLUCENT TECHNOLOGIES INC·Filed 1996·Granted Feb 25, 1997·10 cites·16 claims
- 4238US5407531AMethod of fabricating a compound semiconductor deviceAT & T CORP·Filed 1994·Granted Apr 18, 1995·10 cites·17 claims
- 4337US4784967AMethod for fabricating a field-effect transistor with a self-aligned gateAMERICAN TELEPHONE & TELEGRAPH·Filed 1986·Granted Nov 15, 1988·8 cites·3 claims
- 4435US5153693ACircuit including bistable, bipolar transistorAT & T BELL LAB·Filed 1990·Granted Oct 6, 1992·4 cites·11 claims
- 4535US5115294AOptoelectronic integrated circuitAT & T BELL LAB·Filed 1991·Granted May 19, 1992·6 cites·4 claims
- 4635US2005013337A1Semiconductor injection locked lasers and methodFiled 2004·Application pending·0 cites
- 4732US4011574AJunction arrays for superconducting and nonsuperconducting applicationUS AIR FORCE·Filed 1975·Granted Mar 8, 1977·3 cites·6 claims
- 4830US5834792AArticles comprising doped semiconductor materialLUCENT TECHNOLOGIES INC·Filed 1993·Granted Nov 10, 1998·0 cites·11 claims
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