P

Inventor

ROTONDARO ANTONIO LUIS PACHECO

US24 patents
⚠️ This page may combine multiple inventors who share the name “ROTONDARO ANTONIO LUIS PACHECO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TEXAS INSTRUMENTS INC

17 patents
US6696332B2Feb 24, 2004

Bilayer deposition to avoid unwanted interfacial reactions during high K gate dielectric processing

TEXAS INSTRUMENTS INC145 citations99
US6750126B1Jun 15, 2004

Methods for sputter deposition of high-k dielectric films

TEXAS INSTRUMENTS INC83 citations98
US6656852B2Dec 2, 2003

Method for the selective removal of high-k dielectrics

TEXAS INSTRUMENTS INC62 citations96
US6787425B1Sep 7, 2004

Methods for fabricating transistor gate structures

TEXAS INSTRUMENTS INC27 citations89
US7226826B2Jun 5, 2007

Semiconductor device having multiple work functions and method of manufacture therefor

TEXAS INSTRUMENTS INC14 citations84
US7528072B2May 5, 2009

Crystallographic preferential etch to define a recessed-region for epitaxial growth

TEXAS INSTRUMENTS INC9 citations82
US7514309B2Apr 7, 2009

Methods to selectively protect NMOS regions, PMOS regions, and gate layers during EPI process

TEXAS INSTRUMENTS INC9 citations82
US7601577B2Oct 13, 2009

Work function control of metals

TEXAS INSTRUMENTS INC7 citations74
US7026218B2Apr 11, 2006

Use of indium to define work function of p-type doped polysilicon

TEXAS INSTRUMENTS INC9 citations74
US7088123B1Aug 8, 2006

System and method for extraction of C-V characteristics of ultra-thin oxides

TEXAS INSTRUMENTS INC10 citations70
US7172936B2Feb 6, 2007

Method to selectively strain NMOS devices using a cap poly layer

TEXAS INSTRUMENTS INC6 citations63
US8384138B2Feb 26, 2013

Defect prevention on SRAM cells that incorporate selective epitaxial regions

TEXAS INSTRUMENTS INC2 citations62
US7691714B2Apr 6, 2010

Semiconductor device having a dislocation loop located within a boundary created by source/drain regions and a method of manufacture therefor

TEXAS INSTRUMENTS INC6 citations62
US7601578B2Oct 13, 2009

Defect control in gate dielectrics

TEXAS INSTRUMENTS INC1 citations52
US7071519B2Jul 4, 2006

Control of high-k gate dielectric film composition profile for property optimization

TEXAS INSTRUMENTS INC0 citations52
US6803611B2Oct 12, 2004

Use of indium to define work function of p-type doped polysilicon

TEXAS INSTRUMENTS INC1 citations52
US7199011B2Apr 3, 2007

Method to reduce transistor gate to source/drain overlap capacitance by incorporation of carbon

TEXAS INSTRUMENTS INC1 citations45

TOKYO ELECTRON LTD

7 patents