Inventor · disambiguated record
Tetsuro Asano
Also filed as: ASANO TETSURO
44 granted patents·7 pending applications·322 citations·filing 1986–2018
98Inventor score
Top patents by PatentIndex Score
51 records- 0187US6882210B2Semiconductor switching deviceSANYO ELECTRIC CO·Filed 2001·Granted Apr 19, 2005·51 cites·15 claims
- 0285US7514727B2Active element and switching circuit deviceSANYO ELECTRIC CO·Filed 2006·Granted Apr 7, 2009·12 cites·12 claims
- 0385US7193255B2Semiconductor device with floating conducting region placed between device elementsSANYO ELECTRIC CO·Filed 2005·Granted Mar 20, 2007·13 cites·12 claims
- 0481US6580107B2Compound semiconductor device with depletion layer stop regionSANYO ELECTRIC CO·Filed 2001·Granted Jun 17, 2003·28 cites·30 claims
- 0578US11081554B2Insulated gate semiconductor device having trench termination structure and methodSEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Granted Aug 3, 2021·3 cites·17 claims
- 0677US6946891B2Switching circuit deviceSANYO ELECTRIC CO·Filed 2004·Granted Sep 20, 2005·25 cites·12 claims
- 0776US7294900B2Compound semiconductor device and manufacturing method thereofSANYO ELECTRIC CO·Filed 2005·Granted Nov 13, 2007·7 cites·9 claims
- 0875US7339210B2Compound semiconductor switching circuit deviceSANYO ELECTRIC CO·Filed 2005·Granted Mar 4, 2008·6 cites·13 claims
- 0975US6627967B2Schottky barrier diodeSANYO ELECTRIC CO·Filed 2002·Granted Sep 30, 2003·21 cites·17 claims
- 1074US7358788B2Compound semiconductor switching circuit deviceSANYO ELECTRIC CO·Filed 2006·Granted Apr 15, 2008·5 cites·6 claims
- 1170US6914280B2Switching circuit deviceSANYO ELECTRIC CO·Filed 2003·Granted Jul 5, 2005·17 cites·35 claims
- 1269US6573529B2Semiconductor switching deviceSANYO ELECTRIC CO·Filed 2002·Granted Jun 3, 2003·15 cites·12 claims
- 1368US7173291B2Vertical protecting element formed in semiconductor substrate and semiconductor device using the sameSANYO ELECTRIC CO·Filed 2005·Granted Feb 6, 2007·4 cites·30 claims
- 1467US6897126B2Semiconductor device manufacturing method using mask slanting from orientation flatSANYO ELECTRIC CO·Filed 2002·Granted May 24, 2005·11 cites·6 claims
- 1565US6777277B2Manufacturing method of Schottky barrier diodeSANYO ELECTRIC CO·Filed 2002·Granted Aug 17, 2004·11 cites·18 claims
- 1664US7498616B2Compound semiconductor switch circuit deviceSANYO ELECTRIC CO·Filed 2006·Granted Mar 3, 2009·2 cites·14 claims
- 1764US6657266B2Semiconductor switching deviceSANYO ELECTRIC CO·Filed 2002·Granted Dec 2, 2003·12 cites·26 claims
- 1861US7538394B2Compound semiconductor switch circuit deviceSANYO ELECTRIC CO·Filed 2005·Granted May 26, 2009·1 cites·11 claims
- 1959US7701032B2Compound semiconductor deviceSANYO ELECTRIC CO·Filed 2006·Granted Apr 20, 2010·2 cites·18 claims
- 2059US6853072B2Semiconductor switching circuit device and manufacturing method thereofSANYO ELECTRIC CO·Filed 2003·Granted Feb 8, 2005·8 cites·17 claims
- 2158US7199407B2Semiconductor deviceSANYO ELECTRIC CO·Filed 2005·Granted Apr 3, 2007·1 cites·24 claims
- 2257US6891267B2Semiconductor switching circuit deviceSANYO ELECTRIC CO·Filed 2003·Granted May 10, 2005·7 cites·12 claims
- 2356US6627956B2Semiconductor switching deviceSANYO ELECTRIC CO·Filed 2002·Granted Sep 30, 2003·7 cites·12 claims
- 2455US9735142B2Method of forming a protecting element comprising a first high concentration impurity region separated by an insulating region of a substrateSEMICONDUCTOR COMPONENTS IND LLC·Filed 2014·Granted Aug 15, 2017·0 cites·8 claims
- 2552US8450805B2Compound semiconductor switch circuit deviceASANO TETSURO·Filed 2005·Granted May 28, 2013·1 cites·12 claims
- 2651US6833616B2Multilayer wiring board with mounting padSANYO ELECTRIC CO·Filed 2002·Granted Dec 21, 2004·5 cites·17 claims
- 2751US6682968B2Manufacturing method of Schottky barrier diodeSANYO ELECTRIC CO·Filed 2002·Granted Jan 27, 2004·5 cites·23 claims
- 2850US6787871B2Integrated schottky barrier diode and manufacturing method thereofSANYO ELECTRIC CO·Filed 2002·Granted Sep 7, 2004·5 cites·7 claims
- 2947US8742506B2Protecting element having first and second high concentration impurity regions separated by insulating regionASANO TETSURO·Filed 2012·Granted Jun 3, 2014·0 cites·15 claims
- 3047US7206552B2Semiconductor switching deviceSANYO ELECTRIC CO·Filed 2002·Granted Apr 17, 2007·3 cites·9 claims
- 3146US6867115B2Compound semiconductor deviceSANYO ELECTRIC CO·Filed 2002·Granted Mar 15, 2005·2 cites·9 claims
- 3246US6833608B2Semiconductor device and packaging system thereforeSANYO ELECTRIC CO·Filed 2002·Granted Dec 21, 2004·3 cites·19 claims
- 3345US6818969B2Semiconductor deviceSANYO ELECTRIC CO·Filed 2002·Granted Nov 16, 2004·2 cites·16 claims
- 3444US7262470B2Semiconductor deviceSANYO ELECTRIC CO·Filed 2004·Granted Aug 28, 2007·1 cites·8 claims
- 3544US5837570AHeterostructure semiconductor device and method of fabricating sameSANYO ELECTRIC CO·Filed 1996·Granted Nov 17, 1998·8 cites·4 claims
- 3643US6873828B2Compound semiconductor switching device for high frequency switchingSANYO ELECTRIC CO·Filed 2001·Granted Mar 29, 2005·3 cites·11 claims
- 3742US6903426B2Semiconductor switching deviceSANYO ELECTRIC CO·Filed 2002·Granted Jun 7, 2005·1 cites·12 claims
- 3842US6894371B2Semiconductor deviceSANYO ELECTRIC CO·Filed 2003·Granted May 17, 2005·1 cites·10 claims
- 3941US2005277255A1Compound semiconductor device and manufacturing method thereofSANYO ELECTRIC CO·Filed 2005·Application pending·0 cites
- 4041US2005263822A1Semiconductor device and manufacturing method thereofSANYO ELECTRIC CO·Filed 2005·Application pending·0 cites
- 4141US2003129788A1Compound semiconductor deviceSANYO ELECTRIC CO·Filed 2002·Application pending·0 cites
- 4239US5929468ACompound semiconductor deviceSANYO ELECTRIC CO·Filed 1997·Granted Jul 27, 1999·8 cites·8 claims
- 4338US7732868B2Semiconductor deviceSANYO ELECTRIC CO·Filed 2002·Granted Jun 8, 2010·0 cites·16 claims
- 4438US2005121730A1Protective deviceFiled 2003·Application pending·0 cites
- 4537US7005688B2Semiconductor device with impurity layer to prevent depletion layer expansionSANYO ELECTRIC CO·Filed 2003·Granted Feb 28, 2006·0 cites·20 claims
- 4637US2003013240A1Manufacturing method of compound semiconductor deviceSANYO ELECTRIC CO·Filed 2002·Application pending·0 cites
- 4736US6737890B2Switching circuit deviceSANYO ELECTRIC CO·Filed 2002·Granted May 18, 2004·0 cites·15 claims
- 4836US6727559B2Compound semiconductor deviceSANYO ELECTRIC CO·Filed 2002·Granted Apr 27, 2004·0 cites·7 claims
- 4936US2005179106A1Schottky barrier diodeSANYO ELECTRIC CO·Filed 2005·Application pending·0 cites
- 5034US4694320ASemiconductor integrated circuit having multiple-layered connectionSANYO ELECTRIC CO·Filed 1986·Granted Sep 15, 1987·5 cites·14 claims
Showing the top 50 of 51 patent records by PatentIndex Score.
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