Inventor · disambiguated record
Gyu-Hwan Oh
Also filed as: OH GYU HWAN
24 granted patents·10 pending applications·136 citations·filing 2007–2024
95Inventor score
Top patents by PatentIndex Score
34 records- 0196US8507353B2Method of forming semiconductor device having self-aligned plugOH GYU-HWAN·Filed 2011·Granted Aug 13, 2013·38 cites·11 claims
- 0291US8192592B2Methods of forming a phase-change material layer including tellurium and methods of manufacturing a phase-change memory device using the sameKIM DO-HYUNG·Filed 2008·Granted Jun 5, 2012·12 cites·20 claims
- 0390US8785213B2Method of fabricating non-volatile memory device having small contact and related devicesOH GYU-HWAN·Filed 2012·Granted Jul 22, 2014·11 cites·16 claims
- 0489US8513136B2Memory devices and method of manufacturing the samePARK DOO-HWAN·Filed 2012·Granted Aug 20, 2013·14 cites·32 claims
- 0584US8790976B2Method of forming semiconductor device having self-aligned plugSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jul 29, 2014·5 cites·9 claims
- 0684US8237149B2Non-volatile memory device having bottom electrodeOH GYU-HWAN·Filed 2011·Granted Aug 7, 2012·9 cites·20 claims
- 0783US8830739B2Non-volatile memory device having multi-level cells and method of forming the sameOH GYU-HWAN·Filed 2013·Granted Sep 9, 2014·5 cites·30 claims
- 0882US8551805B2Methods of manufacturing phase-change memory devicesOH GYU-HWAN·Filed 2012·Granted Oct 8, 2013·7 cites·5 claims
- 0979US8884263B2Non-volatile memory device having conductive buffer pattern and method of fabricating the sameOH GYU-HWAN·Filed 2012·Granted Nov 11, 2014·5 cites·9 claims
- 1077US8703573B2Semiconductor device and method of manufacturing the sameOH GYU-HWAN·Filed 2012·Granted Apr 22, 2014·4 cites·20 claims
- 1176US8680500B2Phase change memory devices having buried metal silicide patternsOH GYU-HWAN·Filed 2012·Granted Mar 25, 2014·3 cites·13 claims
- 1276US8557627B2Methods of forming a phase change layer and methods of fabricating a phase change memory device including the sameOH JIN-HO·Filed 2013·Granted Oct 15, 2013·4 cites·20 claims
- 1375US7812332B2Phase change memory device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 12, 2010·7 cites·20 claims
- 1474US8187918B2Methods of forming multi-level cell of semiconductor memoryOH GYU-HWAN·Filed 2009·Granted May 29, 2012·5 cites·11 claims
- 1572US9196827B2Non-volatile memory devices having dual heater configurations and methods of fabricating the sameOH GYU-HWAN·Filed 2012·Granted Nov 24, 2015·3 cites·20 claims
- 1668US2025220893A1Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1761US2025081445A1Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1860US2025107066A1Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1959US8841643B2Semiconductor memory device including buffer electrodeOH GYU-HWAN·Filed 2011·Granted Sep 23, 2014·1 cites·20 claims
- 2058US10833124B2Semiconductor devices including data storage patternsSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Nov 10, 2020·1 cites·12 claims
- 2155US9130160B2Non-volatile memory device having multi-level cells and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Sep 8, 2015·0 cites·20 claims
- 2254US8138490B2Variable resistance non-volatile memory cells and methods of fabricating sameOH GYU-HWAN·Filed 2010·Granted Mar 20, 2012·1 cites·20 claims
- 2352US10692933B2Variable resistance memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jun 23, 2020·0 cites·20 claims
- 2452US8133758B2Method of fabricating phase-change memory device having TiC layerOH GYU-HWAN·Filed 2009·Granted Mar 13, 2012·0 cites·12 claims
- 2550US8021977B2Methods of forming contact structures and semiconductor devices fabricated using contact structuresSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Sep 20, 2011·0 cites·20 claims
- 2650US2011155985A1Phase change structure, and phase change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2010·Application pending·0 cites
- 2747US7759159B2Variable resistance non-volatile memory cells and methods of fabricating sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 20, 2010·1 cites·28 claims
- 2846US2012231603A1Methods of forming phase change material layers and methods of manufacturing phase change memory devicesIM DONG-HYUN·Filed 2012·Application pending·0 cites
- 2945US2007289609A1Method for cleaning a process chamberSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 3044US2008194106A1Method of forming a titanium aluminum nitride layer and method of manufacturing a phase-change memory device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 3143US2009008623A1Methods of fabricating nonvolatile memory device and a nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 3240US2013109148A1Methods of forming a pattern and methods of manufacturing semiconductor devices using the sameOH GYU-HWAN·Filed 2012·Application pending·0 cites
- 3339US2012282751A1Methods of fabricating semiconductor devices including fine patternsOH GYU-HWAN·Filed 2012·Application pending·0 cites
- 3434US8872148B2Phase-change memory devicesPARK DOO-HWAN·Filed 2013·Granted Oct 28, 2014·0 cites·18 claims
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