Inventor · disambiguated record
Eric J. Strang
Also filed as: STRANG ERIC · STRANG ERIC J
62 granted patents·11 pending applications·3,382 citations·filing 2000–2015
99Inventor score
Top patents by PatentIndex Score
73 records- 0199US7723648B2Temperature controlled substrate holder with non-uniform insulation layer for a substrate processing systemTOKYO ELECTRON LTD·Filed 2006·Granted May 25, 2010·551 cites·16 claims
- 0299US6872259B2Method of and apparatus for tunable gas injection in a plasma processing systemTOKYO ELECTRON LTD·Filed 2002·Granted Mar 29, 2005·624 cites·49 claims
- 0399US6740853B1Multi-zone resistance heaterTOKYO ELECTRON LTD·Filed 2000·Granted May 25, 2004·782 cites·43 claims
- 0498US7666479B2Apparatus and method of gas injection sequencingTOKYO ELECTRON LTD·Filed 2007·Granted Feb 23, 2010·42 cites·6 claims
- 0598US7311782B2Apparatus for active temperature control of susceptorsTOKYO ELECTRON LTD·Filed 2005·Granted Dec 25, 2007·98 cites·7 claims
- 0698US7166233B2Pulsed plasma processing method and apparatusTOKYO ELECTRON LTD·Filed 2002·Granted Jan 23, 2007·301 cites·25 claims
- 0797US9139910B2Method for chemical vapor deposition controlLEE ERIC M·Filed 2010·Granted Sep 22, 2015·38 cites·20 claims
- 0897US8852347B2Apparatus for chemical vapor deposition controlLEE ERIC M·Filed 2010·Granted Oct 7, 2014·40 cites·22 claims
- 0997US8038834B2Method and system for controlling radical distributionTOKYO ELECTRON LTD·Filed 2010·Granted Oct 18, 2011·18 cites·15 claims
- 1096US8927907B2Thermally zoned substrate holder assemblyFINK STEVEN T·Filed 2011·Granted Jan 6, 2015·35 cites·11 claims
- 1196US7164236B2Method and apparatus for improved plasma processing uniformityTOKYO ELECTRON LTD·Filed 2004·Granted Jan 16, 2007·66 cites·15 claims
- 1295US6894769B2Monitoring erosion of system components by optical emissionTOKYO ELECTRON LTD·Filed 2002·Granted May 17, 2005·60 cites·43 claims
- 1394US7718030B2Method and system for controlling radical distributionTOKYO ELECTRON LTD·Filed 2005·Granted May 18, 2010·20 cites·17 claims
- 1494US6806949B2Monitoring material buildup on system components by optical emissionTOKYO ELECTRON LTD·Filed 2002·Granted Oct 19, 2004·64 cites·47 claims
- 1592US7740704B2High rate atomic layer deposition apparatus and method of usingTOKYO ELECTRON LTD·Filed 2004·Granted Jun 22, 2010·48 cites·21 claims
- 1690US6806653B2Method and structure to segment RF coupling to silicon electrodeTOKYO ELECTRON LTD·Filed 2003·Granted Oct 19, 2004·33 cites·24 claims
- 1789US8207476B2Temperature controlled substrate holder with non-uniform insulation layer for a substrate processing systemTSUKAMOTO YUJI·Filed 2009·Granted Jun 26, 2012·14 cites·18 claims
- 1888US8092602B2Thermally zoned substrate holder assemblyFINK STEVEN T·Filed 2007·Granted Jan 10, 2012·11 cites·24 claims
- 1988US7462243B2Chemical processing system and methodTOKYO ELECTRON LTD·Filed 2005·Granted Dec 9, 2008·13 cites·44 claims
- 2088US6949722B2Method and apparatus for active temperature control of susceptorsTOKYO ELECTRON LTD·Filed 2003·Granted Sep 27, 2005·33 cites·35 claims
- 2188US6642661B2Method to affect spatial distribution of harmonic generation in a capacitive discharge reactorTOKYO ELECTRON LTD·Filed 2002·Granted Nov 4, 2003·28 cites·24 claims
- 2287US7075031B2Method of and structure for controlling electrode temperatureTOKYO ELECTRON LTD·Filed 2001·Granted Jul 11, 2006·43 cites·28 claims
- 2387US6753498B2Automated electrode replacement apparatus for a plasma processing systemTOKYO ELECTRON LTD·Filed 2003·Granted Jun 22, 2004·29 cites·15 claims
- 2486US6887341B2Plasma processing apparatus for spatial control of dissociation and ionizationTOKYO ELECTRON LTD·Filed 2002·Granted May 3, 2005·25 cites·13 claims
- 2585US7718032B2Dry non-plasma treatment system and method of usingTOKYO ELECTRON LTD·Filed 2006·Granted May 18, 2010·8 cites·15 claims
- 2685US7347901B2Thermally zoned substrate holder assemblyTOKYO ELECTRON LTD·Filed 2003·Granted Mar 25, 2008·25 cites·4 claims
- 2785US6954077B2Apparatus and method for improving microwave coupling to a resonant cavityTOKYO ELECTRON LTD·Filed 2003·Granted Oct 11, 2005·20 cites·38 claims
- 2884US7199327B2Method and system for arc suppression in a plasma processing systemTOKYO ELECTRON LTD·Filed 2003·Granted Apr 3, 2007·22 cites·64 claims
- 2983US8014991B2System and method for using first-principles simulation to characterize a semiconductor manufacturing processTOKYO ELECTRON LTD·Filed 2003·Granted Sep 6, 2011·24 cites·39 claims
- 3080US6913703B2Method of adjusting the thickness of an electrode in a plasma processing systemTOKYO ELECTRON LTD·Filed 2002·Granted Jul 5, 2005·14 cites·19 claims
- 3179US7019253B2Electrically controlled plasma uniformity in a high density plasma sourceTOKYO ELECTRON LTD·Filed 2002·Granted Mar 28, 2006·37 cites·20 claims
- 3278US8562743B2Method and apparatus for atomic layer depositionSTRANG ERIC J·Filed 2011·Granted Oct 22, 2013·1 cites·20 claims
- 3378US7103443B2Directed gas injection apparatus for semiconductor processingTOKYO ELECTRON LTD·Filed 2002·Granted Sep 5, 2006·20 cites·17 claims
- 3477US7540305B2Chemical processing system and methodTOKYO ELECTRON LTD·Filed 2005·Granted Jun 2, 2009·7 cites·9 claims
- 3577US7353141B2Method and system for monitoring component consumptionTOKYO ELECTRON LTD·Filed 2007·Granted Apr 1, 2008·3 cites·3 claims
- 3677US7217336B2Directed gas injection apparatus for semiconductor processingTOKYO ELECTRON LTD·Filed 2002·Granted May 15, 2007·19 cites·20 claims
- 3775US8877000B2Shower head gas injection apparatus with secondary high pressure pulsed gas injectionSTRANG ERIC J·Filed 2002·Granted Nov 4, 2014·14 cites·22 claims
- 3875US7582186B2Method and apparatus for an improved focus ring in a plasma processing systemTOKYO ELECTRON LTD·Filed 2003·Granted Sep 1, 2009·17 cites·24 claims
- 3974US7482757B2Inductively coupled high-density plasma sourceTOKYO ELECTRON LTD·Filed 2002·Granted Jan 27, 2009·13 cites·36 claims
- 4074US7461614B2Method and apparatus for improved baffle plateTOKYO ELECTRON LTD·Filed 2003·Granted Dec 9, 2008·16 cites·11 claims
- 4173US8036869B2System and method for using first-principles simulation to control a semiconductor manufacturing process via a simulation result or a derived empirical modelTOKYO ELECTRON LTD·Filed 2003·Granted Oct 11, 2011·11 cites·46 claims
- 4272US7233878B2Method and system for monitoring component consumptionTOKYO ELECTRON LTD·Filed 2004·Granted Jun 19, 2007·7 cites·40 claims
- 4371US8050900B2System and method for using first-principles simulation to provide virtual sensors that facilitate a semiconductor manufacturing processTOKYO ELECTRON LTD·Filed 2003·Granted Nov 1, 2011·12 cites·50 claims
- 4471US6674241B2Plasma processing apparatus and method of controlling chemistryTOKYO ELECTRON LTD·Filed 2002·Granted Jan 6, 2004·9 cites·44 claims
- 4568US8828185B2Dry non-plasma treatment system and method of usingKENT MARTIN·Filed 2010·Granted Sep 9, 2014·2 cites·13 claims
- 4668US8032348B2System and method for using first-principles simulation to facilitate a semiconductor manufacturing processTOKYO ELECTRON LTD·Filed 2003·Granted Oct 4, 2011·13 cites·31 claims
- 4765US8073667B2System and method for using first-principles simulation to control a semiconductor manufacturing processSTRANG ERIC J·Filed 2003·Granted Dec 6, 2011·12 cites·67 claims
- 4864US8296687B2System and method for using first-principles simulation to analyze a process performed by a semiconductor processing toolSTRANG ERIC J·Filed 2003·Granted Oct 23, 2012·10 cites·59 claims
- 4963US7732227B2Method and apparatus for wall film monitoringTOKYO ELECTRON LTD·Filed 2006·Granted Jun 8, 2010·1 cites·12 claims
- 5061US7214289B2Method and apparatus for wall film monitoringTOKYO ELECTRON LTD·Filed 2002·Granted May 8, 2007·6 cites·36 claims
Showing the top 50 of 73 patent records by PatentIndex Score.
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