Inventor · disambiguated record
Kiyomi Koyama
Also filed as: KOYAMA KIYOMI
15 granted patents·1,325 citations·filing 1981–2003
95Inventor score
Top patents by PatentIndex Score
15 records- 0197US6077310AOptical proximity correction systemTOSHIBA KK·Filed 1999·Granted Jun 20, 2000·534 cites·27 claims
- 0297US5879844AOptical proximity correction methodTOSHIBA KK·Filed 1996·Granted Mar 9, 1999·262 cites·11 claims
- 0397US5538815AMethod for designing phase-shifting masks with automatization capabilityTOSHIBA KK·Filed 1993·Granted Jul 23, 1996·183 cites·10 claims
- 0492US5761075AApparatus for designing photomasksTOSHIBA KK·Filed 1996·Granted Jun 2, 1998·107 cites·4 claims
- 0589US6047116AMethod for generating exposure data for lithographic apparatusTOSHIBA KK·Filed 1998·Granted Apr 4, 2000·62 cites·11 claims
- 0685US4914304ACharged-beam exposure systemTOSHIBA KK·Filed 1989·Granted Apr 3, 1990·36 cites·9 claims
- 0780US6004701AMethod for designing Levenson photomaskTOSHIBA KK·Filed 1998·Granted Dec 21, 1999·45 cites·28 claims
- 0869US5541025AMethod and apparatus for designing photomasksTOSHIBA KK·Filed 1994·Granted Jul 30, 1996·21 cites·13 claims
- 0961US4531191AElectron beam pattern generation systemTOKYO SHIBAURA ELECTRIC CO·Filed 1981·Granted Jul 23, 1985·24 cites·6 claims
- 1058US6034469AImpregnated type cathode assembly, cathode substrate for use in the assembly, electron gun using the assembly, and electron tube using the cathode assemblyTOSHIBA KK·Filed 1996·Granted Mar 7, 2000·10 cites·8 claims
- 1158US4538232AElectron-beam lithographic apparatusTOKYO SHIBAURA ELECTRIC CO·Filed 1982·Granted Aug 27, 1985·21 cites·7 claims
- 1255US7047094B2LSI mask manufacturing system, LSI mask manufacturing method and LSI mask manufacturing programTOSHIBA KK·Filed 2003·Granted May 16, 2006·4 cites·20 claims
- 1352US6447355B1Impregnated-type cathode substrate with large particle diameter low porosity region and small particle diameter high porosity regionTOSHIBA KK·Filed 1999·Granted Sep 10, 2002·7 cites·4 claims
- 1443US6304024B1Impregnated-type cathode substrate with large particle diameter low porosity region and small particle diameter high porosity regionTOSHIBA KK·Filed 1999·Granted Oct 16, 2001·4 cites·10 claims
- 1537US5795683AMethod and a system for designing a photomask for use in manufacture of a semiconductor deviceTOSHIBA KK·Filed 1996·Granted Aug 18, 1998·5 cites·32 claims
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