Inventor · disambiguated record
Tsutomu Ogihara
Also filed as: OGIHARA TSUTOMU
192 granted patents·12 pending applications·983 citations·filing 1989–2023
99Inventor score
Files withSHINETSU CHEMICAL CO166OGIHARA TSUTOMU16MATSUSHITA ELECTRIC INDUSTRIAL CO LTD5SEIKO EPSON CORP4HATAKEYAMA JUN3
Top patents by PatentIndex Score
204 records- 0196US11485824B2Thermosetting silicon-containing compound, composition for forming a silicon-containing film, and patterning processSHINETSU CHEMICAL CO·Filed 2020·Granted Nov 1, 2022·4 cites·8 claims
- 0296US8951917B2Composition for forming resist underlayer film and patterning process using the sameOGIHARA TSUTOMU·Filed 2012·Granted Feb 10, 2015·16 cites·24 claims
- 0396US8652757B2Method for forming resist underlayer film, patterning process using the same, and composition for the resist underlayer filmSHINETSU CHEMICAL CO·Filed 2013·Granted Feb 18, 2014·12 cites·1 claims
- 0496US7541134B2Antireflective film-forming composition, method for manufacturing the same, and antireflective film and pattern formation method using the sameIBM·Filed 2005·Granted Jun 2, 2009·34 cites·8 claims
- 0595US11385544B2Composition for forming silicon-containing resist underlayer film and patterning processSHINETSU CHEMICAL CO·Filed 2020·Granted Jul 12, 2022·4 cites·20 claims
- 0695US8759220B1Patterning processSHINETSU CHEMICAL CO·Filed 2013·Granted Jun 24, 2014·13 cites·46 claims
- 0795US8501386B2Silicon-containing film-forming composition, silicon-containing film-formed substrate, and patterning processOGIHARA TSUTOMU·Filed 2011·Granted Aug 6, 2013·14 cites·14 claims
- 0894US8846846B2Naphthalene derivative, resist bottom layer material, and patterning processKINSHO TAKESHI·Filed 2011·Granted Sep 30, 2014·8 cites·2 claims
- 0994US8835102B2Patterning process and composition for forming silicon-containing film usable thereforOGIHARA TSUTOMU·Filed 2012·Granted Sep 16, 2014·9 cites·15 claims
- 1094US8835697B2Biphenyl derivative, resist bottom layer material, bottom layer forming method, and patterning processKORI DAISUKE·Filed 2012·Granted Sep 16, 2014·9 cites·5 claims
- 1194US5013585AMethod for the preparation of surface-modified silica particlesSHINETSU CHEMICAL CO·Filed 1990·Granted May 7, 1991·88 cites·8 claims
- 1293US10444628B2Compound for forming organic film, composition for forming organic film, method for forming organic film, and patterning processSHINETSU CHEMICAL CO·Filed 2016·Granted Oct 15, 2019·8 cites·17 claims
- 1393US9207535B2Method for producing resist compositionSHINETSU CHEMICAL CO·Filed 2014·Granted Dec 8, 2015·7 cites·20 claims
- 1493US8852844B2Composition for forming silicon-containing film, silicon-containing film-formed substrate and patterning processOGIHARA TSUTOMU·Filed 2009·Granted Oct 7, 2014·18 cites·24 claims
- 1593US8450048B2Method for forming resist underlayer film, patterning process using the same, and composition for the resist underlayer filmHATAKEYAMA JUN·Filed 2009·Granted May 28, 2013·13 cites·22 claims
- 1693US8029974B2Metal oxide-containing film-forming composition, metal oxide-containing film-formed substrate, and patterning processSHINETSU CHEMICAL CO·Filed 2009·Granted Oct 4, 2011·19 cites·27 claims
- 1792US8999625B2Silicon-containing antireflective coatings including non-polymeric silsesquioxanesIBM·Filed 2013·Granted Apr 7, 2015·8 cites·17 claims
- 1892US8026038B2Metal oxide-containing film-forming composition, metal oxide-containing film, metal oxide-containing film-bearing substrate, and patterning methodSHINETSU CHEMICAL CO·Filed 2008·Granted Sep 27, 2011·19 cites·20 claims
- 1992US7202013B2Antireflective film material, and antireflective film and pattern formation method using the sameSHINETSU CHEMICAL CO·Filed 2004·Granted Apr 10, 2007·49 cites·5 claims
- 2091US9805943B2Polymer for resist under layer film composition, resist under layer film composition, and patterning processSHINETSU CHEMICAL CO·Filed 2016·Granted Oct 31, 2017·7 cites·32 claims
- 2191US9136121B2Underlayer film-forming composition and pattern forming processSHINETSU CHEMICAL CO·Filed 2014·Granted Sep 15, 2015·10 cites·18 claims
- 2291US8198016B2Patterning processHATAKEYAMA JUN·Filed 2009·Granted Jun 12, 2012·13 cites·17 claims
- 2391US7585613B2Antireflection film composition, substrate, and patterning processSHINETSU CHEMICAL CO·Filed 2007·Granted Sep 8, 2009·12 cites·22 claims
- 2490US8663898B2Resist underlayer film composition and patterning process using the sameOGIHARA TSUTOMU·Filed 2011·Granted Mar 4, 2014·7 cites·28 claims
- 2590US8329376B2Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning methodOGIHARA TSUTOMU·Filed 2007·Granted Dec 11, 2012·17 cites·14 claims
- 2690US7875417B2Silicone-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning methodSHINETSU CHEMICAL CO·Filed 2008·Granted Jan 25, 2011·12 cites·17 claims
- 2790US7405459B2Semiconductor device comprising porous filmSHINETSU CHEMICAL CO·Filed 2007·Granted Jul 29, 2008·13 cites·4 claims
- 2889US11231649B2Patterning processSHINETSU CHEMICAL CO·Filed 2019·Granted Jan 25, 2022·3 cites·22 claims
- 2989US9522979B2Fluorine-containing silicon compound, method for producing same, and method for producing fluorine-containing silicon resinSHINETSU CHEMICAL CO·Filed 2015·Granted Dec 20, 2016·2 cites·8 claims
- 3088US9804492B2Method for forming multi-layer film and patterning processSHINETSU CHEMICAL CO·Filed 2015·Granted Oct 31, 2017·5 cites·20 claims
- 3188US8932953B2Composition for forming a silicon-containing resist underlayer film and patterning process using the sameOGIHARA TSUTOMU·Filed 2012·Granted Jan 13, 2015·6 cites·30 claims
- 3288US7855043B2Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning methodSHINETSU CHEMICAL CO·Filed 2007·Granted Dec 21, 2010·10 cites·15 claims
- 3388US7417104B2Porous film-forming composition, patterning process, and porous sacrificial filmSHINETSU CHEMICAL CO·Filed 2005·Granted Aug 26, 2008·9 cites·2 claims
- 3487US9728420B2Organic film composition, process for forming organic film, patterning process, and compoundSHINETSU CHEMICAL CO·Filed 2016·Granted Aug 8, 2017·5 cites·15 claims
- 3587US8853031B2Resist underlayer film composition and patterning process using the sameOGIHARA TSUTOMU·Filed 2011·Granted Oct 7, 2014·5 cites·28 claims
- 3687US8652750B2Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning methodOGIHARA TSUTOMU·Filed 2008·Granted Feb 18, 2014·9 cites·15 claims
- 3787US7163778B2Anti-reflection film material and a substrate having an anti-reflection film and a method for forming a patternSHINETSU CHEMICAL CO·Filed 2004·Granted Jan 16, 2007·28 cites·16 claims
- 3886US11005421B2Circuit device, oscillator, electronic apparatus, and vehicleSEIKO EPSON CORP·Filed 2019·Granted May 11, 2021·3 cites·10 claims
- 3986US10416563B2Resist underlayer film composition, patterning process, and method for forming resist underlayer filmSHINETSU CHEMICAL CO·Filed 2018·Granted Sep 17, 2019·4 cites·21 claims
- 4086US4983388AProcess of preparing silicone composition, and cosmetic and lustering materials containing silicone composition obtainedSHINETSU CHEMICAL CO·Filed 1989·Granted Jan 8, 1991·35 cites·18 claims
- 4185US12332565B2Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning processSHINETSU CHEMICAL CO·Filed 2023·Granted Jun 17, 2025·0 cites·12 claims
- 4285US10603696B2Process for manufacturing resist composition and patterning processSHINETSU CHEMICAL CO·Filed 2015·Granted Mar 31, 2020·4 cites·20 claims
- 4385US9857686B2Composition for forming resist underlayer film and patterning processSHINETSU CHEMICAL CO·Filed 2016·Granted Jan 2, 2018·4 cites·20 claims
- 4485US7910283B2Silicon-containing antireflective coating forming composition, silicon-containing antireflective coating, substrate processing intermediate, and substrate processing methodSHINETSU CHEMICAL CO·Filed 2006·Granted Mar 22, 2011·8 cites·4 claims
- 4584US11366386B2Patterning processSHINETSU CHEMICAL CO·Filed 2019·Granted Jun 21, 2022·2 cites·22 claims
- 4684US9977330B2Compound for forming organic film, and organic film composition using the same, process for forming organic film, and patterning processSHINETSU CHEMICAL CO·Filed 2015·Granted May 22, 2018·3 cites·24 claims
- 4784US7303785B2Antireflective film material, and antireflective film and pattern formation method using the sameSHINETSU CHEMICAL CO·Filed 2004·Granted Dec 4, 2007·31 cites·16 claims
- 4883US10241412B2Resist underlayer film composition, patterning process, and method for forming resist underlayer filmSHINETSU CHEMICAL CO·Filed 2018·Granted Mar 26, 2019·3 cites·20 claims
- 4983US9312127B2Method for producing semiconductor apparatus substrateSHINETSU CHEMICAL CO·Filed 2015·Granted Apr 12, 2016·4 cites·20 claims
- 5083US8951711B2Patterning process and composition for forming silicon-containing film usable thereforSHINETSU CHEMICAL CO·Filed 2014·Granted Feb 10, 2015·3 cites·4 claims
Showing the top 50 of 204 patent records by PatentIndex Score.
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