P

Inventor

WANG GENG

US196 patents
⚠️ This page may combine multiple inventors who share the name “WANG GENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

32 patents
US9842835B1Dec 12, 2017

High density nanosheet diodes

IBM315 citations99
US10243054B1Mar 26, 2019

Integrating standard-gate and extended-gate nanosheet transistors on the same substrate

IBM64 citations98
US9881998B1Jan 30, 2018

Stacked nanosheet field effect transistor device with substrate isolation

IBM70 citations98
US9627511B1Apr 18, 2017

Vertical transistor having uniform bottom spacers

IBM52 citations98
US6972461B1Dec 6, 2005

Channel MOSFET with strained silicon channel on strained SiGe

IBM97 citations98
US10141403B1Nov 27, 2018

Integrating thin and thick gate dielectric nanosheet transistors on same chip

IBM40 citations94
US9991254B1Jun 5, 2018

Forming horizontal bipolar junction transistor compatible with nanosheets

IBM28 citations94
US9935014B1Apr 3, 2018

Nanosheet transistors having different gate dielectric thicknesses on the same chip

IBM35 citations94
US9728621B1Aug 8, 2017

iFinFET

IBM23 citations94
US9391204B1Jul 12, 2016

Asymmetric FET

IBM33 citations94
US9653480B1May 16, 2017

Nanosheet capacitor

IBM16 citations93
US7790530B2Sep 7, 2010

Dual port gain cell with side and top gated read transistor

IBM19 citations93
US7732872B2Jun 8, 2010

Integration scheme for multiple metal gate work function structures

IBM24 citations93
US7550359B1Jun 23, 2009

Methods involving silicon-on-insulator trench memory with implanted plate

IBM17 citations93
US7459743B2Dec 2, 2008

Dual port gain cell with side and top gated read transistor

IBM27 citations93
US7294879B2Nov 13, 2007

Vertical MOSFET with dual work function materials

IBM21 citations93
US7045873B2May 16, 2006

Dynamic threshold voltage MOSFET on SOI

IBM47 citations93
US8354675B2Jan 15, 2013

Enhanced capacitance deep trench capacitor for EDRAM

IBM20 citations92
US10504890B2Dec 10, 2019

High density nanosheet diodes

IBM7 citations84
US10396169B2Aug 27, 2019

Nanosheet transistors having different gate dielectric thicknesses on the same chip

IBM8 citations84
US10269790B2Apr 23, 2019

Forming horizontal bipolar junction transistor compatible with nanosheets

IBM6 citations84
US10229920B1Mar 12, 2019

One-time programmable vertical field-effect transistor

IBM7 citations84
US9917090B1Mar 13, 2018

Vertical antifuse structures

IBM7 citations84
US9799647B1Oct 24, 2017

Integrated device with P-I-N diodes and vertical field effect transistors

IBM10 citations84
US9768166B1Sep 19, 2017

Integrated LDMOS and VFET transistors

IBM8 citations84
US9287272B2Mar 15, 2016

Metal trench capacitor and improved isolation and methods of manufacture

IBM5 citations84
US9093466B2Jul 28, 2015

Epitaxial extension CMOS transistor

IBM6 citations84
US9054126B2Jun 9, 2015

Recessed single crystalline source and drain for semiconductor-on-insulator devices

IBM5 citations84
US8372721B2Feb 12, 2013

Work function engineering for eDRAM MOSFETs

IBM6 citations84
US7923815B2Apr 12, 2011

DRAM having deep trench capacitors with lightly doped buried plates

IBM10 citations84
US7485525B2Feb 3, 2009

Method of manufacturing a multiple port memory having a plurality of parallel connected trench capacitors in a cell

IBM15 citations84
US7445988B2Nov 4, 2008

Trench memory

IBM10 citations84

CHENG KANGGUO

4 patents

NEUSOFT CORP

3 patents

PEI CHENGWEN

3 patents

BOOTH JR ROGER A

3 patents

CHEN XIANGDONG

2 patents

SAMSUNG ELECTRONICS CO INC

1 patent

GLOBALFOUNDRIES INC

1 patent

DORIS BRUCE B

1 patent

Showing the top 50 of 196 patents by PatentIndex Score.