Inventor · disambiguated record
Hong-Bae Park
Also filed as: PARK HONG-BAE
41 granted patents·18 pending applications·419 citations·filing 1997–2024
98Inventor score
Files withSAMSUNG ELECTRONICS CO LTD33PARK HONG-BAE6LG PHILIPS LCD CO LTD3HYNIX SEMICONDUCTOR INC2HYUNDAI ELECTRONICS IND2
Top patents by PatentIndex Score
59 records- 0198US7521331B2High dielectric film and related method of manufactureSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 21, 2009·64 cites·31 claims
- 0297US9508727B2Integrated circuit device and method of manufacturing the samePARK HONG-BAE·Filed 2015·Granted Nov 29, 2016·48 cites·23 claims
- 0395US10014304B2Integrated circuit device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 3, 2018·10 cites·16 claims
- 0494US11705503B2Semiconductor device including non-sacrificial gate spacers and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jul 18, 2023·3 cites·18 claims
- 0593US10636886B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Apr 28, 2020·16 cites·20 claims
- 0690US8513740B2Complementary metal oxide semiconductor device having metal gate stack structure and method of manufacturing the samePARK HONG-BAE·Filed 2010·Granted Aug 20, 2013·18 cites·19 claims
- 0786US8293599B2Methods of forming semiconductor devices having gates with different work functions using selective injection of diffusion inhibiting materialsNA HOON-JOO·Filed 2009·Granted Oct 23, 2012·12 cites·18 claims
- 0886US7972950B2Method of fabricating semiconductor device having dual gateSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jul 5, 2011·8 cites·10 claims
- 0986US6229166B1Ferroelectric random access memory device and fabrication method thereforSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted May 8, 2001·66 cites·15 claims
- 1085US9240483B2Fin-type field effect transistors including aluminum doped metal-containing layerSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Jan 19, 2016·10 cites·20 claims
- 1181US10651179B2Integrated circuit device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted May 12, 2020·2 cites·15 claims
- 1279US9287199B2CMOS transistor, semiconductor device including the transistor, and semiconductor module including the deviceLEE HYE-LAN·Filed 2010·Granted Mar 15, 2016·6 cites·26 claims
- 1377US7396719B2Method of forming high dielectric film using atomic layer deposition and method of manufacturing capacitor having the high dielectric filmSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jul 8, 2008·18 cites·4 claims
- 1476US8786028B2Semiconductor device and method of fabricating the sameHONG HYUNG-SEOK·Filed 2012·Granted Jul 22, 2014·5 cites·35 claims
- 1576US6828254B2Plasma enhanced chemical vapor deposition apparatus and method for forming nitride layer using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Dec 7, 2004·14 cites·7 claims
- 1675US9543300B2CMOS transistor, semiconductor device including the transistor, and semiconductor module including the deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jan 10, 2017·2 cites·30 claims
- 1775US9252058B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Feb 2, 2016·3 cites·20 claims
- 1873US6744195B2Flat luminescence lampLG PHILIPS LCD CO LTD·Filed 2001·Granted Jun 1, 2004·8 cites·6 claims
- 1972US7342564B2Method and apparatus for driving liquid crystal displayLG PHILIPS LCD CO LTD·Filed 2003·Granted Mar 11, 2008·10 cites·16 claims
- 2070US8580629B2Method of fabricating semiconductor device using a work function control filmPARK HONG-BAE·Filed 2011·Granted Nov 12, 2013·3 cites·15 claims
- 2170US2023187446A1Method of manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 2269US11309393B2Integrated circuit device including an overhanging hard mask layerSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Apr 19, 2022·1 cites·14 claims
- 2369US9236313B2Method of fabricating semiconductor device having dual gateSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jan 12, 2016·1 cites·16 claims
- 2469US6933918B1Method and apparatus for driving liquid crystal displayLG PHILIPS LCD CO LTD·Filed 2003·Granted Aug 23, 2005·11 cites·20 claims
- 2567US6829126B2Electrostatic discharge protection circuitHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Dec 7, 2004·14 cites·10 claims
- 2667US6806183B2Methods for forming capacitors on semiconductor substratesSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Oct 19, 2004·10 cites·21 claims
- 2765US6815776B2Multi-finger type electrostatic discharge protection circuitHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Nov 9, 2004·13 cites·19 claims
- 2863US12015063B2Method of manufacturing an integrated circuit device including a fin-type active regionSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jun 18, 2024·0 cites·20 claims
- 2963US6929956B2Ferroelectric random access memory device and fabrication method thereforSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Aug 16, 2005·7 cites·8 claims
- 3062US7459372B2Methods of manufacturing a thin film including hafnium titanium oxide and methods of manufacturing a semiconductor device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 2, 2008·1 cites·27 claims
- 3162US6815370B2Plasma enhanced chemical vapor deposition apparatus and method for forming nitride layer using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Nov 9, 2004·4 cites·11 claims
- 3260US7982703B2Driving liquid crystal displayLG DISPLAY CO LTD·Filed 2008·Granted Jul 19, 2011·0 cites·7 claims
- 3357US7585198B2Flat luminescent lamp and method for manufacturing the sameLG DISPLAY CO LTD·Filed 2006·Granted Sep 8, 2009·0 cites·3 claims
- 3457US7078857B2Flat luminescent lamp and method for manufacturing the sameSANGNONG ENTPR CO LTD·Filed 2001·Granted Jul 18, 2006·3 cites·15 claims
- 3556US11532624B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Dec 20, 2022·0 cites·20 claims
- 3655US8367502B2Method of manufacturing dual gate semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Feb 5, 2013·1 cites·14 claims
- 3753US6146935AMethod for forming capacitor of semiconductor device using pre-bakeSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Nov 14, 2000·13 cites·9 claims
- 3853US2008268653A1Method of forming high dielectric film using atomic layer deposition and method of manufacturing capacitor having the high dielectric filmSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 3953US2025006789A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 4051US8932922B2Method of fabricating semiconductor device having dual gateNA HOON-JOO·Filed 2011·Granted Jan 13, 2015·0 cites·12 claims
- 4151US2019198639A1Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Application pending·0 cites
- 4245US6344960B1Electrostatic discharge protecting circuit for semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 1999·Granted Feb 5, 2002·10 cites·13 claims
- 4344US7399670B2Methods of forming different gate structures in NMOS and PMOS regions and gate structures so formedSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 15, 2008·0 cites·19 claims
- 4444US2007166931A1Methods of Manufacturing A Semiconductor Device for Improving the Electrical Characteristics of A Dielectric FilmPARK HONG-BAE·Filed 2006·Application pending·0 cites
- 4543US2006189055A1Method of forming a composite layer, method of manufacturing a gate structure by using the method of forming the composite layer and method of manufacturing a capacitor by using the method of forming the composite layerSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 4642US6997768B2Flat luminescence lamp and method for manufacturing the sameSANGNONG ENTPR CO LTD·Filed 2003·Granted Feb 14, 2006·0 cites·12 claims
- 4742US2006019501A1Methods of forming a thin layer including hafnium silicon oxide using atomic layer deposition and methods of forming a gate structure and a capacitor including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 4841US2006013946A1Methods of forming a thin film structure, and a gate structure and a capacitor including the thin film structurePARK HONG-BAE·Filed 2005·Application pending·0 cites
- 4941US2007057292A1SONOS type non-volatile semiconductor devices and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 5041US2008023765A1Semiconductor Devices and Methods of Fabricating the SameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
Showing the top 50 of 59 patent records by PatentIndex Score.
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