Inventor · disambiguated record
Sivakumar Kumarasamy
Also filed as: KUMARASAMY SIVAKUMAR
9 granted patents·6 pending applications·44 citations·filing 2011–2023
83Inventor score
Files withQUALCOMM INC10PSEMI CORP2KUMARASAMY SIVAKUMAR1PEREGRINE SEMICONDUCTOR CORP1SHEN JINMIAO J1
Top patents by PatentIndex Score
15 records- 0198US11081559B1Backside contact of a semiconductor deviceQUALCOMM INC·Filed 2020·Granted Aug 3, 2021·21 cites·20 claims
- 0296US9847348B1Systems, methods and apparatus for enabling high voltage circuitsPEREGRINE SEMICONDUCTOR CORP·Filed 2016·Granted Dec 19, 2017·18 cites·20 claims
- 0386US11081582B2High voltage (HV) metal oxide semiconductor field effect transistor (MOSFET) in semiconductor on insulator (SOI) technologyQUALCOMM INC·Filed 2020·Granted Aug 3, 2021·2 cites·8 claims
- 0485US10147740B2Methods and structures for reducing back gate effect in a semiconductor devicePSEMI CORP·Filed 2017·Granted Dec 4, 2018·3 cites·8 claims
- 0562US10770480B2Systems, methods, and apparatus for enabling high voltage circuitsPSEMI CORP·Filed 2019·Granted Sep 8, 2020·0 cites·15 claims
- 0656US10600910B2High voltage (HV) metal oxide semiconductor field effect transistor (MOSFET) in semiconductor on insulator (SOI) technologyQUALCOMM INC·Filed 2018·Granted Mar 24, 2020·0 cites·15 claims
- 0756US2025015047A1Single-step via-last process for multi-stack wafersQUALCOMM INC·Filed 2023·Application pending·0 cites
- 0850US10903357B2Laterally diffused metal oxide semiconductor (LDMOS) transistor on a semiconductor on insulator (SOI) layer with a backside deviceQUALCOMM INC·Filed 2018·Granted Jan 26, 2021·0 cites·12 claims
- 0950US10840383B1Non-volatile memory (NVM) structure with front and back gatesQUALCOMM INC·Filed 2019·Granted Nov 17, 2020·0 cites·20 claims
- 1049US2023282716A1High performance device with double side contactsQUALCOMM INC·Filed 2022·Application pending·0 cites
- 1145US2020235107A1Antifuse memory cellsQUALCOMM INC·Filed 2020·Application pending·0 cites
- 1245US2022109441A1High performance switches with non-volatile adjustable threshold voltageQUALCOMM INC·Filed 2020·Application pending·0 cites
- 1341US2020373315A1Non-volatile memory (nvm) structure using hot carrier injection (hci)QUALCOMM INC·Filed 2019·Application pending·0 cites
- 1436US8835298B2NiSi rework procedure to remove platinum residualsKUMARASAMY SIVAKUMAR·Filed 2012·Granted Sep 16, 2014·0 cites·20 claims
- 1535US2013084697A1Split gate memory device with gap spacerSHEN JINMIAO J·Filed 2011·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →