Inventor · disambiguated record
Juing-Yi Cheng
Also filed as: CHENG JUING-YI
10 granted patents·427 citations·filing 1996–2008
91Inventor score
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10 records- 0196US6649538B1Method for plasma treating and plasma nitriding gate oxidesTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Nov 18, 2003·139 cites·17 claims
- 0293US6541382B1Lining and corner rounding method for shallow trench isolationTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Apr 1, 2003·98 cites·21 claims
- 0388US5943560AMethod to fabricate the thin film transistorNAT SCIENCE COUNCIL·Filed 1996·Granted Aug 24, 1999·104 cites·6 claims
- 0481US6821868B2Method of forming nitrogen enriched gate dielectric with low effective oxide thicknessTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Nov 23, 2004·33 cites·24 claims
- 0577US6638866B1Chemical-mechanical polishing (CMP) process for shallow trench isolationTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Oct 28, 2003·20 cites·24 claims
- 0674US6391792B1Multi-step chemical mechanical polish (CMP) planarizing method for forming patterned planarized aperture fill layerTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted May 21, 2002·22 cites·18 claims
- 0752US7598797B2Charge pump circuit with bipolar outputAMAZING MICROELECTRONIC CORP·Filed 2008·Granted Oct 6, 2009·3 cites·11 claims
- 0851US7087528B2Chemical-mechanical polishing (CMP) process for shallow trench isolationTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Aug 8, 2006·3 cites·15 claims
- 0942US7087508B2Method of improving short channel effect and gate oxide reliability by nitrogen plasma treatment before spacer depositionTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Aug 8, 2006·1 cites·32 claims
- 1037US6743715B1Dry clean process to improve device gate oxide integrity (GOI) and reliabilityTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Jun 1, 2004·4 cites·30 claims
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