Inventor · disambiguated record
Satoshi Yanagiya
Also filed as: YANAGIYA SATOSHI
10 granted patents·815 citations·filing 1989–1997
93Inventor score
Files withTOSHIBA KK10
Top patents by PatentIndex Score
10 records- 0197US5126807AVertical MOS transistor and its production methodTOSHIBA KK·Filed 1991·Granted Jun 30, 1992·193 cites·7 claims
- 0296US5321289AVertical MOSFET having trench covered with multilayer gate filmTOSHIBA KK·Filed 1993·Granted Jun 14, 1994·164 cites·6 claims
- 0394US5242845AMethod of production of vertical MOS transistorTOSHIBA KK·Filed 1992·Granted Sep 7, 1993·121 cites·10 claims
- 0492US5578508AVertical power MOSFET and process of fabricating the sameTOSHIBA KK·Filed 1995·Granted Nov 26, 1996·135 cites·9 claims
- 0584US5770514AMethod for manufacturing a vertical transistor having a trench gateTOSHIBA KK·Filed 1997·Granted Jun 23, 1998·59 cites·1 claims
- 0676US5610422ASemiconductor device having a buried insulated gateTOSHIBA KK·Filed 1995·Granted Mar 11, 1997·35 cites·5 claims
- 0773US5726088AMethod of manufacturing a semiconductor device having a buried insulated gateTOSHIBA KK·Filed 1996·Granted Mar 10, 1998·30 cites·2 claims
- 0866US5084408AMethod of making complete dielectric isolation structure in semiconductor integrated circuitTOSHIBA KK·Filed 1990·Granted Jan 28, 1992·36 cites·8 claims
- 0957US5589421AMethod of manufacturing annealed filmsTOSHIBA KK·Filed 1994·Granted Dec 31, 1996·27 cites·6 claims
- 1049US4984052ABonded substrate of semiconductor elements having a high withstand voltageTOSHIBA KK·Filed 1989·Granted Jan 8, 1991·15 cites·6 claims
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