Inventor · disambiguated record
Neng Jiang
Also filed as: JIANG NENG
11 granted patents·40 citations·filing 2014–2018
86Inventor score
Files withTEXAS INSTRUMENTS INC11
Top patents by PatentIndex Score
11 records- 0195US10009001B2Devices with specific termination angles in titanium tungsten layers and methods for fabricating the sameTEXAS INSTRUMENTS INC·Filed 2016·Granted Jun 26, 2018·22 cites·20 claims
- 0289US9524881B2Method for fabricating specific termination angles in titanium tungsten layersTEXAS INSTRUMENTS INC·Filed 2015·Granted Dec 20, 2016·6 cites·23 claims
- 0387US9660603B2Sloped termination in molybdenum layers and method of fabricatingTEXAS INSTRUMENTS INC·Filed 2015·Granted May 23, 2017·7 cites·20 claims
- 0480US9304283B2Bond-pad integration scheme for improved moisture barrier and electrical contactTEXAS INSTRUMENTS INC·Filed 2014·Granted Apr 5, 2016·4 cites·20 claims
- 0562US9716013B2Sloped photoresist edges for defect reduction for metal dry etch processesTEXAS INSTRUMENTS INC·Filed 2014·Granted Jul 25, 2017·1 cites·14 claims
- 0655US9405089B2High-temperature isotropic plasma etching process to prevent electrical shortsTEXAS INSTRUMENTS INC·Filed 2014·Granted Aug 2, 2016·0 cites·9 claims
- 0753US11148939B2Stress compensation for piezoelectric optical MEMS devicesTEXAS INSTRUMENTS INC·Filed 2018·Granted Oct 19, 2021·0 cites·18 claims
- 0853US9939710B2High-temperature isotropic plasma etching process to prevent electrical shortsTEXAS INSTRUMENTS INC·Filed 2016·Granted Apr 10, 2018·0 cites·16 claims
- 0952US9890040B2Stress compensation for piezoelectric optical MEMS devicesTEXAS INSTRUMENTS INC·Filed 2014·Granted Feb 13, 2018·0 cites·16 claims
- 1051US10319899B2Method of forming a semiconductor deviceTEXAS INSTRUMENTS INC·Filed 2017·Granted Jun 11, 2019·0 cites·20 claims
- 1144US9755139B2Piezoeletric wet etch process with reduced resist lifting and controlled undercutTEXAS INSTRUMENTS INC·Filed 2015·Granted Sep 5, 2017·0 cites·20 claims
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