Inventor · disambiguated record
Joong-Il An
Also filed as: AN JOONG-IL
4 granted patents·447 citations·filing 1998–2000
77Inventor score
Files withSAMSUNG ELECTRONICS CO LTD4
Top patents by PatentIndex Score
4 records- 0195US6326322B1Method for depositing a silicon nitride layerSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Dec 4, 2001·431 cites·5 claims
- 0260US6265261B1Semiconductor device and fabricating method therefor in which a netride layer in a capacitor is formed in a shortened time periodSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jul 24, 2001·13 cites·3 claims
- 0339US6265264B1Method of doping and HSG surface of a capacitor electrode with PH3 under a low temperature/high pressure processing conditionSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jul 24, 2001·2 cites·3 claims
- 0427US6015758AMethod of stripping a wafer of its film with gas injected into a CVD apparatus in which the wafer is disposedSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Jan 18, 2000·1 cites·18 claims
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